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Home > Products > Discrete Semiconductor Products > Transistors > Special Purpose

STMicroelectronics STC08IE120HV

Name: STC08IE120HV
Brand: STMicroelectronics
SKU: STC08IE120HV
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STC08IE120HV

Manufacturer:: STMicroelectronics

Category:: Special Purpose

Package:: TO-247-4

Datasheet:: STC08IE120HV.pdf

Description:: TRANS ESBT 1200V 8A TO247-4LHV

Quantity:: RFQ Add To RFQ list

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Inventory:7,196

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Product details

Overview

STC08IE120HV from STMicroelectronics is an Emitter-Switched Bipolar Transistor (ESBT®) in a TO-247-4L HV package, rated for 1200 V collector-source voltage, 8 A continuous collector current, and 0.10 Ω equivalent on-resistance. It delivers fast switching up to 150 kHz with low C_iss (550 pF) and low turn-off crossover time, optimized for high-voltage flyback and forward SMPS topologies.

For engineers reviewing the STC08IE120HV datasheet, STC08IE120HV pinout, STC08IE120HV application, or STC08IE120HV equivalent, key selection criteria include its cascode architecture, squared RBSOA up to 1200 V, gate-driven topology compatibility, and 0.8 V V_CS(ON) at 8 A - critical for high-efficiency, high-frequency power conversion design.

Technical Context

The STC08IE120HV integrates a high-voltage bipolar transistor and a low-voltage MOSFET in monolithic cascode configuration, enabling gate-driven control of 1200 V blocking capability. Its base-emitter junction is internally driven by the MOSFET's source, eliminating external base drive complexity while maintaining full RBSOA integrity.

It operates with ±17 V gate-source voltage rating, supports 24 A peak collector current (t_P < 5 ms), and achieves 670 ns storage time and 15 ns fall time under inductive load conditions (I_C = 4 A, R_G = 47 Ω). Thermal resistance is 0.6 °C/W (junction-to-case), enabling high-power dissipation at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CS(SS)	1200 V - Maximum blocking voltage without snubber, enabling direct use in 1000 V-class AC/DC front-ends.
I_C	8 A continuous - Sustained current handling for 100–200 W SMPS designs with margin for transient loads.
V_CS(ON)	0.8 V at I_C = 8 A - Low conduction loss reduces thermal stress and improves efficiency vs. standard IGBTs.
C_iss	550 pF at V_CS = 25 V - Enables fast, low-loss switching with modest gate drive (R_G = 47 Ω).
t_s/t_f	670 ns / 15 ns - Short storage/fall times support stable operation up to 150 kHz without excessive switching loss.
R_th(j-case)	0.6 °C/W - Allows 208 W total dissipation at T_C = 25°C, supporting compact heatsink integration.
h_FE	5–7 at I_C = 8 A - Predictable DC gain simplifies base current sizing in gate-driven configurations.

Pinout & Package

STC08IE120HV uses the TO-247-4L HV package - a 4-pin, through-hole, high-voltage-optimized variant of TO-247 with isolated emitter and dedicated sense pin for improved gate control and dynamic stability.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab)	Collector	Electrically connected to metal tab; primary high-voltage power terminal requiring insulated mounting.
2	Emitter	Main emitter output; referenced to system ground in flyback/forward topologies.
3	Gate	MOSFET gate input; accepts standard ±17 V logic-level drive for cascode control.
4	Sense Emitter	Dedicated Kelvin emitter connection; enables accurate gate-source voltage regulation and minimizes layout-induced switching oscillation.

Key Features

Feature	Design Value
Cascode high-voltage architecture	Monolithic integration of 1200 V BJT + low-V_GS MOSFET eliminates discrete driver complexity and improves dv/dt immunity.
Squared RBSOA up to 1200 V	Guarantees safe operation under inductive switching stress without derating - critical for PFC and flyback reliability.
Low V_CS(ON) (0.8 V @ 8 A)	Reduces conduction loss by >40% vs. comparable 1200 V IGBTs, lowering thermal design burden.
47 Ω gate drive optimized	Enables robust, low-overshoot switching with standard gate drivers - no active Miller clamp required.
ECOPACK® lead-free packaging	Complies with JEDEC JESD97; RoHS-compliant second-level interconnect with marked environmental category.

Applications

Flyback SMPS

Forward SMPS

Use Scenario: Primary-side switch in universal-input (85–265 VAC), 100–150 W offline flyback converters.

IC Role / Device Role / Timing Role: High-voltage main switch operating at 65–130 kHz with zero-voltage switching assist.

Use Value: 1200 V rating allows direct use without voltage clamping; 0.8 V V_CS(ON) cuts conduction loss by 35% vs. legacy 1350 V IGBTs.

Use Scenario: Main power switch in telecom-grade 48 V output, 200 W forward converter with active clamp reset.

IC Role / Device Role / Timing Role: High-duty-cycle, hard-switched primary switch with tight timing control via gate drive.

Use Value: Squared RBSOA ensures reliable operation during reset transients; 670 ns storage time prevents tail current overlap loss.

SEPIC PFC

Industrial HV DC-DC

Use Scenario: Boost switch in single-ended primary inductance converter (SEPIC) for active PFC stages in medical power supplies.

IC Role / Device Role / Timing Role: High-voltage, medium-current switch operating in continuous conduction mode (CCM) at 50–100 kHz.

Use Value: 24 A peak current rating supports surge handling; low C_iss enables efficient high-frequency boost operation.

Use Scenario: Isolated DC-DC stage in industrial motor drives (e.g., 400 V DC bus to 24 V control rail).

IC Role / Device Role / Timing Role: Primary-side switch in asymmetrical half-bridge or push-pull topology with 1200 V isolation barrier.

Use Value: TO-247-4L HV package provides creepage/clearance compliance; 0.6 °C/W R_th sustains 150°C junction temperature under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage cascode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB	650 V trench-gate IGBT with FRD; higher V_CE(sat) (1.8 V), slower switching (t_f = 120 ns).	Limited to ≤650 V bus; unsuitable for 1000 V+ PFC or flyback without series stacking.	Select only if system voltage ≤600 V and thermal budget permits higher conduction loss.
IXTH30N50L	500 V LDMOS; 30 A rating but max V_DSS = 500 V; no integrated base drive or RBSOA guarantee.	Requires external gate/base driver; not validated for 1200 V RBSOA-critical topologies like forward with clamp.	Use only in lower-voltage, non-safety-critical industrial DC-DC where cost outweighs reliability assurance.

Compared with STGW30H65DFB and IXTH30N50L, STC08IE120HV uniquely combines 1200 V blocking, cascode gate control, and guaranteed squared RBSOA - making it irreplaceable in high-reliability, high-frequency, high-voltage SMPS where snubberless operation and thermal efficiency are mandatory.

Availability

STC08IE120HV is available at Aetrix Electronics and suitable for flyback SMPS, forward SMPS, SEPIC PFC, and industrial HV DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for STC08IE120HV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, power devices, and microcontrollers for industrial, automotive, and consumer markets.

The ESBT® product line was developed specifically for high-frequency, high-voltage power conversion - delivering gate-controlled bipolar performance with simplified drive and enhanced ruggedness over discrete IGBT/MOSFET solutions.

FAQ

Is STC08IE120HV still in active production?

No - STC08IE120HV is marked "Obsolete Product(s)" in the official ST datasheet (Rev 3, Jan 2007). It remains available through authorized legacy distributors and Aetrix Electronics' extended-life inventory program with full traceability and quality screening per MIL-STD-883 Class B.

What is the function of Pin 4 (Sense Emitter)?

Pin 4 is the Kelvin sense emitter terminal, electrically separate from the main emitter (Pin 2). It provides a dedicated return path for gate drive current, eliminating PCB trace inductance effects and ensuring precise V_GS control during fast switching transitions.

Can STC08IE120HV replace a standard IGBT in existing designs?

Yes, with layout and drive adjustments: Pin 2 (Emitter) and Pin 4 (Sense Emitter) must be routed separately; gate drive must comply with ±17 V rating and avoid exceeding 12 A peak base current. V_CS(ON) is lower than most IGBTs, reducing heatsink requirements.

Does STC08IE120HV require a negative gate voltage for turn-off?

No - it operates with 0 V to +10 V gate drive (typical); negative gate voltage is not required. The datasheet specifies V_GS = 0 V for turn-off, and the device exhibits no shoot-through risk due to its cascode structure and inherent minority-carrier control.

STC08IE120HV Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: ESBT®

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN - Emitter Switched Bipolar

Applications:: Gate Driver

Voltage - Rated:: 1200V (1.2kV)

Current Rating (Amps):: 8A

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4L HV

STC08IE120HV FAQ

1.How can I place an order for STC08IE120HV through Aetrix?

Please submit a Request for Quotation (RFQ) for STC08IE120HV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STC08IE120HV reliable?

The price and inventory of STC08IE120HV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STC08IE120HV is usually 5 days.

3.What payment methods are accepted for STC08IE120HV?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STC08IE120HV transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STC08IE120HV?

STC08IE120HV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STC08IE120HV order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STC08IE120HV?

For technical support, including STC08IE120HV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STC08IE120HV requirements.

6.How does Aetrix verify that STC08IE120HV is sourced from the original manufacturer or authorized distributors?

All STC08IE120HV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STC08IE120HV meets industry standards.

7.What is the process for return or replacement of STC08IE120HV?

All STC08IE120HV units undergo pre-shipment inspection (PSI). If there is an issue with STC08IE120HV, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STC08IE120HV part is unused and in its original packaging.

Return procedure for STC08IE120HV:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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