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Home > Products > Discrete Semiconductor Products > Transistors > Special Purpose

STMicroelectronics STC20DE90HP

Name: STC20DE90HP
Brand: STMicroelectronics
SKU: STC20DE90HP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STC20DE90HP

Manufacturer:: STMicroelectronics

Category:: Special Purpose

Package:: TO-247-4

Datasheet:: STC20DE90HP.pdf

Description:: MOSFET ESBT 900V 20A TO247-4

Quantity:: RFQ Add To RFQ list

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Inventory:8,817

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Product details

Overview

STC20DE90HP from STMicroelectronics is a hybrid emitter-switched bipolar transistor (ESBT®) designed for high-voltage, medium-power switching in forward converter and three-phase PFC topologies. It delivers 900 V collector-source blocking voltage, 20 A continuous collector current, 1.2 V typical V_CS(ON) at 20 A, 0.06 Ω equivalent on-resistance, and operates up to 150 kHz with squared RBSOA.

For engineers reviewing the STC20DE90HP datasheet, STC20DE90HP pinout, STC20DE90HP application, or STC20DE90HP equivalent, key selection criteria include dynamic voltage overshoot (V_CS(dyn) = 2.3 V @ 500 ns), gate charge (Q_GS(tot) = 12.5 nC), thermal resistance (R_thj-case = 2.7 °C/W), and snubberless 900 V switching capability.

Technical Context

The STC20DE90HP integrates a high-voltage bipolar transistor with a low-voltage MOSFET in a single TO-247-4L HP package, enabling fast turn-off via MOSFET-controlled base extraction. Its ESBT topology eliminates need for external base drive circuitry while maintaining robust RBSOA up to 900 V.

It features dual gate-base control: V_GS sets conduction state, while V_BS/V_SB thresholds (1.5–3 V) and h_FE (4–12) govern current gain and saturation behavior. Dynamic performance is optimized for RG = 47 Ω, yielding 775 ns storage time and 7 ns fall time under inductive load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CS(SS)	900 V - Enables direct use in 400 V DC-link three-phase PFC and 800 V offline forward converters without snubber.
I_C	20 A continuous - Supports ≥500 W power stages with margin for transient overload (I_CM = 60 A).
V_CS(ON)	1.2 V @ 20 A - Delivers low conduction loss (24 W at full load), reducing heatsink requirements.
R_thj-case	2.7 °C/W - Allows 46 W total dissipation at T_c ≤ 25°C; enables compact thermal design in industrial SMPS.
C_iss	750 pF @ 25 V - Low input capacitance minimizes gate drive power and improves switching efficiency at 150 kHz.
Q_GS(tot)	12.5 nC - Enables fast, low-loss switching with standard 1–2 W gate drivers (e.g., STGAP2S).
t_s/t_f	775 ns / 7 ns @ I_C = 10 A - Confirmed fast switching under inductive load, critical for ZVS/ZCS resonant designs.

Pinout & Package

STC20DE90HP uses the TO-247-4L HP package - a 4-pin, through-hole, thermally enhanced variant of TO-247 with isolated gate/base terminals and integrated heat slug. Pin 1 = Collector, Pin 2 = Gate, Pin 3 = Emitter, Pin 4 = Base.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (C)	High-voltage collector	Carries main switched current (up to 900 V); connected to primary-side DC bus or transformer winding.
Pin 2 (G)	MOSFET gate	Controls MOSFET section; referenced to emitter; requires ±20 V rating and 12.5 nC drive.
Pin 3 (E)	Emitter (common source/base reference)	Return path for both MOSFET and bipolar sections; serves as power ground reference for gate drive.
Pin 4 (B)	Bipolar base	Driven indirectly via MOSFET; not directly accessible-base current (IB = 4 A typ.) is internally regulated.

Key Features

Feature	Design Value
Squared RBSOA up to 900 V	Enables reliable snubberless operation in hard-switched forward converters without secondary breakdown risk.
Very fast switching (≤150 kHz)	Reduces magnetic component size in PFC chokes and forward transformer cores by >30% vs. IGBTs.
Low C_iss (750 pF) with RG = 47 Ω	Minimizes gate drive losses and EMI generation in high-frequency industrial power supplies.
Hybrid ESBT® structure	Combines bipolar conduction efficiency with MOSFET gate control-no external base resistor or driver needed.
ECOPACK® lead-free packaging	Complies with JEDEC JESD97; supports RoHS-compliant manufacturing and reflow profiles.

Applications

SMPS Forward Converter

Three-Phase PFC

Use Scenario: Primary-side switch in isolated 300–500 W telecom or industrial forward converter with 400 V DC input.

IC Role / Device Role / Timing Role: Main high-voltage switching element; handles full primary current and voltage stress during PWM on/off cycles.

Use Value: 900 V V_CS(SS) and snubberless 900 V switching (V_CSW) eliminate clamp circuits, reducing BOM count and layout area.

Use Scenario: Active switch in Vienna rectifier or three-level NPC PFC stage for motor drives and UPS systems.

IC Role / Device Role / Timing Role: High-side/low-side switching device in interleaved or multi-phase boost configuration.

Use Value: Squared RBSOA and 20 A I_C support continuous conduction mode (CCM) operation at 50 kHz with minimal thermal derating.

Industrial AC-DC Power Supply

High-Voltage DC-DC Converter

Use Scenario: Main switch in 400–600 W open-frame power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Hard-switched power transistor in asymmetric half-bridge or forward-derived topology.

Use Value: 1.2 V V_CS(ON) and 2.7 °C/W R_thj-case enable >92% efficiency at full load without forced air cooling.

Use Scenario: Isolation-stage switch in 1–3 kW battery charger DC-DC stage (e.g., 800 V → 400 V).

IC Role / Device Role / Timing Role: High-efficiency unidirectional power transfer switch with fast recovery and low dynamic loss.

Use Value: 2.3 V V_CS(dyn) @ 500 ns ensures minimal voltage overshoot during turn-off, preserving SiC/GaN secondary-side devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage hybrid switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB	650 V trench-gate field-stop IGBT; higher V_CE(sat) (1.8 V), slower switching (t_f ≈ 100 ns).	Limited to ≤600 V DC-link; requires snubber in 900 V-class forward converters.	Preferable where lower gate charge and cost outweigh voltage limitation.
IXYS IXGH30N60B3	600 V Gen 3 IGBT; 2.2 V V_CE(sat), 150 ns t_f, no RBSOA guarantee above 600 V.	Not rated for 900 V operation; unsuitable for snubberless forward converter primary switches.	Only viable if system redesign reduces DC-link voltage to ≤650 V.

Compared with STGW30H65DFB and IXGH30N60B3, the STC20DE90HP uniquely supports 900 V snubberless switching with sub-10 ns fall time-critical for high-density, high-efficiency forward and three-phase PFC designs where voltage headroom and dynamic loss are limiting factors.

Availability

STC20DE90HP is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, three-phase PFC modules, and high-voltage DC-DC converters requiring stable component supply and long-term design-in support.

Supply support for STC20DE90HP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions across automotive, industrial, and consumer markets.

The STC20DE90HP belongs to ST's ESBT® high-voltage power transistor family, engineered specifically for snubberless, high-frequency switching in forward converters and multi-phase PFC topologies where bipolar conduction efficiency meets MOSFET controllability.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG = 47 Ω for characterization of switching times and dynamic voltage. Using RG > 68 Ω increases storage time beyond 1 µs and risks excessive V_CS(dyn) overshoot (>3.5 V). For 150 kHz operation, 33–47 Ω is optimal to balance EMI and loss.

Can STC20DE90HP replace a standard IGBT in existing forward converter designs?

Yes-if the original IGBT is rated ≤900 V and operates below 100 kHz. The STC20DE90HP offers lower V_CE(sat) and faster switching but requires gate drive referenced to emitter (not collector), and its base terminal is not externally accessible. Layout must isolate gate drive return from power ground.

Is STC20DE90HP suitable for zero-voltage switching (ZVS) topologies?

Yes-its 7 ns fall time, low C_iss, and controlled V_CS(dyn) make it well-suited for phase-shifted full-bridge and LLC resonant converters. However, ZVS timing must account for its 775 ns storage time, which exceeds typical MOSFET t_off; dead-time should exceed 1 µs.

Does STC20DE90HP require a negative gate voltage for safe turn-off?

No-turn-off is achieved by removing positive V_GS; the datasheet specifies V_GS = 0 V sufficient for full depletion. Negative V_GS is not required or specified, and applying < −5 V may degrade gate oxide reliability over time per ST's application notes.

STC20DE90HP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN - Emitter Switched Bipolar

Applications:: General Purpose

Voltage - Rated:: 900V

Current Rating (Amps):: 20A

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4L HP

STC20DE90HP FAQ

1.How can I place an order for STC20DE90HP through Aetrix?

Please submit a Request for Quotation (RFQ) for STC20DE90HP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STC20DE90HP reliable?

The price and inventory of STC20DE90HP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STC20DE90HP is usually 5 days.

3.What payment methods are accepted for STC20DE90HP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STC20DE90HP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STC20DE90HP?

STC20DE90HP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STC20DE90HP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STC20DE90HP?

For technical support, including STC20DE90HP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STC20DE90HP requirements.

6.How does Aetrix verify that STC20DE90HP is sourced from the original manufacturer or authorized distributors?

All STC20DE90HP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STC20DE90HP meets industry standards.

7.What is the process for return or replacement of STC20DE90HP?

All STC20DE90HP units undergo pre-shipment inspection (PSI). If there is an issue with STC20DE90HP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STC20DE90HP part is unused and in its original packaging.

Return procedure for STC20DE90HP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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