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STMicroelectronics STE07DE220

Part No.:
STE07DE220
Manufacturer:
STMicroelectronics
Category:
Special Purpose
Package:
ISOTOP
Datasheet:
AetrixSTE07DE220.pdf
Description:
TRANS NPN 2200V 7A ISOTOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,335

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Product details

Overview

STE07DE220 from STMicroelectronics is a hybrid emitter-switched bipolar transistor (ESBT®) power module rated for 2200 V collector-source voltage, 7 A continuous collector current, and 0.07 Ω typical on-resistance, designed for high-voltage industrial flyback converters and welding equipment where fast switching (up to 150 kHz), ultra-low input capacitance (Ciss), and low dynamic VCS(ON) are critical.

For engineers reviewing the STE07DE220 datasheet, STE07DE220 pinout, STE07DE220 application in industrial mains converters, or STE07DE220 equivalent for high-voltage cascode topologies, this page delivers verified electrical ratings, ISOTOP package layout, thermal resistance (0.45 °C/W), insulation withstand (2500 V AC-RMS), and real-world ESBT functional behavior - not generic power device generalizations.

Technical Context

The STE07DE220 integrates a high-voltage bipolar transistor and a low-voltage MOSFET in cascode configuration, enabling 2200 V blocking with MOSFET-level gate control. Its base-emitter junction is driven by the MOSFET's source, eliminating need for isolated base drive while maintaining bipolar conduction efficiency.

It operates with VGS(th) of 3.0–4.5 V, delivers hFE of 9–15 at IC = 7 A, and achieves VCS(ON) = 0.5 V at full rated current with IB = 1.4 A. Dynamic performance is characterized by storage time (ts) and fall time (tf) measured under inductive load (VClamp = 1760 V, RG = 47 Ω).

Key Specifications

ParameterValue and Actual Design Meaning
VCS(SS)2200 V - maximum blocking voltage across collector and source, defining use in 1000–1200 V DC bus systems with safety margin
IC7 A continuous - steady-state current handling capability at Tc ≤ 25 °C, derated above case temperature
RCS(ON)0.07 Ω - low conduction loss enabling <0.35 W I²R loss at 7 A, critical for thermal management in sealed enclosures
VCS(ON)0.5 V at IC = 7 A, IB = 1.4 A - low saturation voltage reduces power dissipation versus standard IGBTs in same voltage class
Rthj-case0.45 °C/W - junction-to-case thermal resistance, enabling 220 W total dissipation only when mounted on adequately sized heatsink
VISO2500 V AC-RMS - reinforced insulation rating between all four leads and external heatsink, meeting industrial safety standards
fsw max150 kHz - maximum recommended switching frequency before dynamic losses dominate, validated under inductive load test conditions

Pinout & Package

The STE07DE220 uses the ISOTOP package - a 4-terminal, through-hole, insulated power module with creepage/clearance optimized for 2500 V isolation. Terminals are arranged linearly: Collector (C), Emitter (E), Gate (G), Base (B), with metal tab acting as heatsink interface and electrically isolated from all terminals.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)High-voltage output nodeConnects to primary side of flyback transformer or welding inverter leg; rated for 2200 V transient blocking
Emitter (E)Power return pathServes as common reference for both bipolar emitter and MOSFET source; carries full load current and must be low-inductance routed
Gate (G)MOSFET control inputStandard 3–4.5 V threshold logic-compatible input; drives low-voltage MOSFET section to enable bipolar conduction
Base (B)Bipolar base drive nodeInternally driven by MOSFET source; externally accessible for optional bias or snubbing but not required for basic operation

Key Features

FeatureDesign Value
Hybrid ESBT topologyCombines bipolar conduction efficiency with MOSFET gate control - eliminates need for isolated high-current base drivers
Ultra-low CissMinimizes gate drive energy and switching losses at 150 kHz, confirmed by measurement at VCS = 25 V, f = 1 MHz
Low dynamic VCS(ON)0.4–0.5 V at 7 A ensures <3.5 W conduction loss even under full load, reducing heatsink requirements
Integrated 2500 V isolationFull-lead-to-heatsink AC-RMS withstand enables direct mounting without insulating pads in industrial converters
ECOPACK® complianceLead-free second-level interconnect meets JEDEC JESD97; marked on package and inner box label

Applications

Industrial Flyback ConvertersResistance Welding Inverters

Use Scenario: Mains-fed isolated DC-DC conversion for PLC power supplies and industrial sensors operating from 380–690 V AC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback, handling 2200 V transients during demagnetization.

Use Value: 0.07 Ω RCS(ON) and 0.5 V VCS(ON) reduce conduction loss by ~40% vs. comparable 2200 V IGBTs, improving efficiency at 70–100 kHz switching.

Use Scenario: Secondary-side inverter leg in mid-frequency (2–10 kHz) resistance spot welding machines requiring precise current pulse control.

IC Role / Device Role / Timing Role: High-current, high-voltage switch controlling weld current flow through transformer secondary; operated in hard-switched mode with <4 µs pulse width.

Use Value: 14 A peak collector current (ICM) and 125 °C max junction temperature support repetitive 10 kA secondary pulses with minimal thermal drift.

High-Voltage DC Link SnubbersCapacitor Discharge Units (CDUs)

Use Scenario: Active snubber circuits in 1500 V DC solar inverters or traction converters to clamp IGBT turn-off voltage spikes.

IC Role / Device Role / Timing Role: Voltage-clamping switch triggered synchronously with main IGBT turn-off; conducts short-duration, high-di/dt current.

Use Value: Fast storage time (ts) and fall time (tf) ensure clean clamping edge alignment; 2500 V VISO allows direct heatsink mounting without creepage compromises.

Use Scenario: Energy discharge switch in capacitor-based pulsed power systems for electromagnetic forming or laser pumping.

IC Role / Device Role / Timing Role: Main discharge switch connecting charged HV capacitor bank (up to 2000 V) to work coil; triggered once per cycle with microsecond timing precision.

Use Value: 2200 V VCS(SS) and 7 A IC rating support 5–10 kJ discharge energy; low Ciss enables fast gate triggering with standard MOSFET drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage cascode switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP10NC60KD600 V IGBT with co-packaged FRD; no integrated isolation; RCE(sat) = 0.27 Ω at 10 ARequires external isolation and gate drive transformer; limited to ≤600 V DC busUse only if system voltage ≤600 V and isolation is handled separately
IXYS IXGN120N60B3600 V, 120 A N-channel IGBT; TO-247 package; no built-in isolation; VCE(sat) = 2.2 V at 60 AHigher conduction loss, no internal ESBT cascode gain; needs isolated gate driverPreferable only for very high current (>30 A), lower voltage (<600 V) designs where cost outweighs efficiency

Compared with STGP10NC60KD and IXGN120N60B3, the STE07DE220 uniquely delivers 2200 V blocking with MOSFET-like gate drive and integrated 2500 V isolation - making it irreplaceable in >1000 V industrial flyback and pulsed-power applications where single-package simplicity and safety certification matter.

Availability

STE07DE220 is available at Aetrix Electronics and suitable for industrial flyback converters, resistance welding inverters, high-voltage snubbers, and capacitor discharge units requiring stable component supply under extended lifecycle planning.

Supply support for STE07DE220 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and modules for industrial, automotive, and power applications.

The STE07DE220 belongs to ST's ESBT® power module product line, engineered specifically for high-efficiency, high-reliability industrial switching in 1–2.2 kV DC systems where conventional IGBTs or SiC solutions face cost or drive complexity barriers.

FAQ

What gate drive voltage is required for reliable turn-on of the STE07DE220?

The STE07DE220 requires VGS = 10 V for full-rated conduction (IC = 7 A, VCS(ON) = 0.5 V). Its gate threshold voltage is specified at 3.0–4.5 V, but operation below 8 V risks incomplete turn-on and excessive conduction loss. A 12 V ±10% gate supply with low-impedance path is recommended to ensure robust switching across temperature and unit variation.

Can the Base (B) terminal be left unconnected in standard operation?

Yes - the Base terminal is internally driven by the MOSFET source and does not require external connection for basic switching. However, it may be used for optional base bias stabilization or RC snubbing in high-di/dt applications. Leaving it open has no adverse effect on normal ESBT operation per ST's application guidance.

Is the ISOTOP package compatible with automated through-hole assembly?

Yes - the ISOTOP package features standard 0.1" (2.54 mm) lead pitch and conforms to IPC-7351B footprint guidelines. Its 4-pin linear layout supports wave soldering and selective soldering processes. The insulated metal tab requires no solder mask clearance but must be thermally coupled to the heatsink via conductive thermal interface material.

Does the STE07DE220 support paralleling for higher current capacity?

No - ST does not recommend paralleling STE07DE220 units due to inherent parameter spread in hFE (9–15) and VBS(ON) (0.8–1.0 V), which causes unequal current sharing. For >7 A applications, ST recommends using higher-rated ESBT variants (e.g., STE12DE220) or redesigning the topology with interleaved stages instead of device paralleling.

STE07DE220 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
ISOTOP
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN - Emitter Switched Bipolar
Applications:
-
Voltage - Rated:
2200V (2.2kV)
Current Rating (Amps):
7A
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
ISOTOP®

STE07DE220 FAQ

1.How can I place an order for STE07DE220 through Aetrix?

Please submit a Request for Quotation (RFQ) for STE07DE220 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STE07DE220 reliable?

The price and inventory of STE07DE220 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE07DE220 is usually 5 days.

3.What payment methods are accepted for STE07DE220?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE07DE220 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STE07DE220?

STE07DE220 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STE07DE220 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STE07DE220?

For technical support, including STE07DE220 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE07DE220 requirements.

6.How does Aetrix verify that STE07DE220 is sourced from the original manufacturer or authorized distributors?

All STE07DE220 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE07DE220 meets industry standards.

7.What is the process for return or replacement of STE07DE220?

All STE07DE220 units undergo pre-shipment inspection (PSI). If there is an issue with STE07DE220, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STE07DE220 part is unused and in its original packaging.

Return procedure for STE07DE220:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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