My Inquiry
My Account
STMicroelectronics STE50DE100
- Part No.:
- STE50DE100
- Manufacturer:
- STMicroelectronics
- Category:
- Special Purpose
- Package:
- ISOTOP
- Datasheet:
-
STE50DE100.pdf
- Description:
- TRANS NPN 1000V 50A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,661
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STE50DE100 from STMicroelectronics is a hybrid Emitter Switched Bipolar Transistor (ESBT®) configured as a high-voltage cascode device, rated for 1000 V collector-source voltage, 50 A continuous collector current, and 0.026 Ω equivalent on-resistance. It delivers ultra-low Ciss (2500 pF), fast switching up to 150 kHz, and low dynamic VCS(ON) (4.8–5.5 V at µs-scale transients), targeting high-efficiency industrial DC-DC converters and arc-welding inverters.
For engineers reviewing the STE50DE100 datasheet, STE50DE100 pinout, STE50DE100 application, or STE50DE100 equivalent, key selection criteria include its cascode topology's gate-driven bipolar conduction, insulated 2500 VRMS isolation rating, thermal resistance (Rthj-case = 0.78 °C/W), and absence of snubber requirement up to 1000 V switched without external clamping.
Technical Context
The STE50DE100 integrates a high-voltage bipolar transistor and low-voltage MOSFET in a monolithic hybrid ISOTOP package, where the MOSFET drives the bipolar emitter via base current control - enabling MOS-gate simplicity with bipolar conduction efficiency. Its cascode architecture inherently blocks 1000 V while sustaining 50 A with minimal VCS(ON) (1.3 V @ 50 A).
Dynamic performance is defined by low input capacitance (Ciss = 2500 pF), fast storage time (ts = 430 ns @ 2.5 A base drive), and controlled fall time (tf = 6 ns), optimized for hard-switched inductive loads at ≤150 kHz. The device operates with ±20 V gate-source voltage tolerance and requires no external base resistor due to integrated gate-drive path.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCS(SS) | 1000 V - Enables direct use in 600–800 V DC bus industrial converters without series stacking. |
| IC | 50 A continuous - Supports high-power welding inverter output stages with forced-air or liquid-cooled heatsinking. |
| RCS(ON) | 0.026 Ω - Delivers <1.3 V saturation drop at full load, minimizing conduction loss in high-current paths. |
| Ciss | 2500 pF @ 25 V - Reduces gate drive power and enables efficient 150 kHz switching without excessive driver dissipation. |
| VINS | 2500 VRMS - Provides reinforced insulation between all four leads and heatsink, eliminating need for isolating thermal pads in Class I equipment. |
| ts/tf | 430 ns / 6 ns @ 2.5 A IB - Enables clean hard-switching in inductive welder primary circuits with minimal voltage overshoot. |
| Rthj-case | 0.78 °C/W - Allows 160 W total dissipation at Tc = 25°C; practical derating required above 85°C case temperature. |
Pinout & Package
STE50DE100 uses the ISOTOP package: a 4-terminal, isolated, stud-mount power module with integral ceramic insulation and copper baseplate. Dimensions: 38.0 × 25.3 × 12.0 mm (L×W×H), lead-free ECOPACK® compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | High-voltage power output node | Connected to DC bus or transformer primary; rated for 1000 V blocking and 150 A peak surge. |
| Emitte r (E) | Power return path | Low-inductance emitter connection; forms main current loop with collector and base drive return. |
| Base (B) | Bipolar base drive terminal | Driven by integrated MOSFET; accepts 10 A DC / 50 A peak base current for full saturation. |
| Gate (G) | MOSFET gate control input | Standard ±20 V logic-level interface; 60 nC total gate charge enables standard gate drivers (e.g., IR2110). |
Key Features
| Feature | Design Value |
|---|---|
| Cascode hybrid topology | Combines MOS gate control with bipolar conduction - eliminates gate charge trade-off of IGBTs while retaining high-voltage capability. |
| Snubberless 1000 V switching | Validated up to 1000 V without external RC snubber under inductive load conditions (VCSW = 1000 V). |
| Reinforced insulation | 2500 VRMS isolation withstand ensures safety compliance in mains-connected welding equipment per IEC 60950-1. |
| Low dynamic VCS(ON) | 4.8 V at 1 µs transient - limits voltage stress during turn-off, reducing EMI and clamp losses in high-dI/dt welder circuits. |
| High dI/dt capability | Rated for 150 A peak collector current with 5 ms pulse width - supports short-circuit tolerant welding arc initiation. |
Applications
| Industrial DC-DC Converters | Resistance Spot Welding Inverters |
|---|---|
|
Use Scenario: 600–800 V input, 50–100 kW isolated DC-DC conversion for battery charging or HVDC distribution. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 50–150 kHz with zero-voltage switching assist. Use Value: 0.026 Ω RCS(ON) reduces conduction loss by >30% vs. comparable 1200 V IGBTs, improving system efficiency to >96%. |
Use Scenario: Secondary-side inverter stage delivering 10–30 kA pulsed current to welding electrodes. IC Role / Device Role / Timing Role: Fast-turning main switch controlling transformer primary current with precise 10–100 ms pulse width. Use Value: 430 ns storage time enables accurate arc-on timing control; 2500 VRMS isolation eliminates separate gate isolation transformers. |
| Plasma Cutting Power Supplies | Induction Heating Generators |
|
Use Scenario: High-frequency (20–100 kHz) resonant inverter driving plasma torch with rapid start/stop cycles. IC Role / Device Role / Timing Role: Hard-switched half-bridge leg with active freewheeling and overcurrent protection. Use Value: 150 kHz max switching frequency and 6 ns fall time minimize dead-time losses and improve duty-cycle fidelity. |
Use Scenario: 30–50 kHz series-resonant inverter supplying 50–200 kW to induction coils in metal forging lines. IC Role / Device Role / Timing Role: High-current, high-voltage switching element handling repetitive 50 A pulses with 1000 V blocking. Use Value: Cascode structure maintains stable hFE (6–13) across temperature, ensuring consistent gain and predictable base drive requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage cascode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP10NC60KD | 600 V, 10 A IGBT with built-in FRD; higher VCE(sat) (2.5 V), slower tf (150 ns), no isolation. | Suitable only for ≤400 V DC bus systems; requires external isolation and snubber for 1000 V operation. | Select when cost sensitivity outweighs efficiency and isolation needs in lower-voltage welders. |
| IXYS IXGN50N120B3 | 1200 V, 50 A IGBT with 3.2 V VCE(sat); Ciss = 4800 pF; Rthj-case = 0.45 °C/W but no integrated isolation. | Requires external 2500 V isolation barrier and gate drive transformer; higher switching loss at 150 kHz. | Prefer for higher junction temperature margin (TJmax = 175°C) where heatsink space permits added isolation components. |
Compared with STGP10NC60KD and IXGN50N120B3, the STE50DE100 uniquely integrates 1000 V blocking, 2500 V isolation, and cascode low-loss conduction in one package - eliminating discrete isolation, snubbers, and base drive complexity in industrial welder and converter designs.
Availability
STE50DE100 is available at Aetrix Electronics and suitable for industrial converters, resistance spot welding inverters, and plasma cutting power supplies requiring stable component supply and long-term lifecycle support despite its obsolete status.
Supply support for STE50DE100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
The STE50DE100 belongs to ST's ESBT® (Emitter Switched Bipolar Transistor) product line, developed specifically to replace IGBTs in high-frequency, high-voltage industrial inverters where conduction loss, switching speed, and galvanic isolation are critical.
FAQ
Is STE50DE100 still in production?
No - STE50DE100 is marked "Obsolete Product(s)" in ST's official documentation (Rev 2, Jan 2007). However, Aetrix Electronics maintains legacy inventory with full traceability and offers extended lifecycle support including obsolescence forecasting and cross-reference guidance for migration paths.
What gate drive voltage is required?
The STE50DE100 requires VGS = 10 V for full saturation (IC = 50 A, VCS(ON) = 1.3 V), with absolute maximum rating of ±20 V. Gate threshold voltage is 3.0–4.5 V; drive circuits must deliver ≥60 nC total charge and sustain ≥10 A peak base current through the internal MOSFET.
Can it replace an IGBT in existing welder designs?
Yes - with layout adaptation. Unlike IGBTs, STE50DE100 has four terminals (C, E, B, G) and integrated isolation, so PCB footprint, gate drive routing, and heatsink mounting differ. Its lower VCS(ON) and faster switching reduce losses, but gate drive must be referenced to emitter, not collector, due to cascode topology.
What thermal interface material is recommended?
ST specifies conductive grease for Rthc-h = 0.05 °C/W. Use non-silicone, zinc-oxide-based thermal compound (e.g., Wakefield Thermal 120-3000) applied at 0.1–0.15 mm thickness. Avoid silicone greases that may outgas and degrade ISOTOP ceramic insulation over time at 150°C junction temperature.
STE50DE100 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- ISOTOP
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Emitter Switched Bipolar
- Applications:
- -
- Voltage - Rated:
- 1000V (1kV)
- Current Rating (Amps):
- 50A
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
STE50DE100 FAQ
1.How can I place an order for STE50DE100 through Aetrix?
Please submit a Request for Quotation (RFQ) for STE50DE100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STE50DE100 reliable?
The price and inventory of STE50DE100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE50DE100 is usually 5 days.
3.What payment methods are accepted for STE50DE100?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE50DE100 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STE50DE100?
STE50DE100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STE50DE100 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STE50DE100?
For technical support, including STE50DE100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE50DE100 requirements.
6.How does Aetrix verify that STE50DE100 is sourced from the original manufacturer or authorized distributors?
All STE50DE100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE50DE100 meets industry standards.
7.What is the process for return or replacement of STE50DE100?
All STE50DE100 units undergo pre-shipment inspection (PSI). If there is an issue with STE50DE100, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STE50DE100 part is unused and in its original packaging.
Return procedure for STE50DE100:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STE50DE100 Tags
-
PMD2001D,115
Nexperia USA Inc.
-
PMD3001D,115
Nexperia USA Inc.
-
BCM62B,215
Nexperia USA Inc.
-
BCM61B,215
Nexperia USA Inc.
-
BCV62,215
Nexperia USA Inc.
-
BCV61A,215
Nexperia USA Inc.
-
BCV61C,215
Nexperia USA Inc.
-
BCV62B,215
Nexperia USA Inc.
-
BCV62C,215
Nexperia USA Inc.
-
ALD910019SAL
Advanced Linear Devices Inc.
-
ALD810027SCL
Advanced Linear Devices Inc.
-
ALD810019SCLI
Advanced Linear Devices Inc.
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
