STMicroelectronics STGIPQ3H60T-HZS

Overview

STGIPQ3H60T-HZS from STMicroelectronics is a 3-phase intelligent power module (IPM) integrating six trench-gate fieldstop IGBTs with freewheeling diodes, three half-bridge HVIC gate drivers, an op-amp, comparator, NTC thermistor interface, and ±2 kV HBM ESD protection. It delivers 3 A/600 V inverter functionality with built-in undervoltage lockout, interlocking, shutdown, and 1800 Vrms isolation for compact AC motor drives.

For engineers reviewing the STGIPQ3H60T-HZS datasheet, STGIPQ3H60T-HZS pinout, STGIPQ3H60T-HZS application, or STGIPQ3H60T-HZS equivalent, this IPM supports TTL/CMOS logic inputs (3.3 V/5 V/15 V), provides bootstrap-diode integration, enables fast current-sensing via OPOUT/CIN, and implements fault protection with <200 ns comparator-to-shutdown propagation delay.

Technical Context

This IPM integrates three independent half-bridge gate drivers with internal bootstrap diodes and dedicated Vboot pins per phase (U/V/W), enabling self-contained high-side drive without external bootstrap components. Each driver features active interlocking (180 ns dead time), UVLO on both VCC and Vboot rails, and open-drain SD/OD output tied to NTC sensing.

The embedded op-amp (input offset voltage ≤6 mV, GBWP 8–12 MHz) and comparator (0.54 V reference, 90–130 ns delay) operate independently of MCU supply rails and support direct shunt-based current monitoring with configurable RC filtering. Shutdown propagation is asymmetric: U-phase disables instantly upon CIN fault; V/W phases depend on external R_SD/C_SD timing per AN4966.

Key Specifications

Pinout & Package

N2DIP-26L type Z no stand-off package: 26-pin molded module with exposed thermal pad internally connected to GND, optimized for screw-mounted heatsink attachment and low-inductance power routing. Dimensions: 32.15 mm × 12.45 mm × 4.10 mm (L × W × A2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 3-phase IPM motor drive applications.

Compared with FSTB12A60 and FSB50825, STGIPQ3H60T-HZS uniquely combines 3 A rating with on-module op-amp, NTC interface, and 1800 Vrms isolation in the smallest N2DIP-26L footprint - optimizing for space-constrained, sensor-integrated BLDC/PMSM designs.

Availability

STGIPQ3H60T-HZS is available at Aetrix Electronics and suitable for dishwasher motor drives, kitchen hood fan control, and refrigerator compressor applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGIPQ3H60T-HZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STGIPQ3H60T-HZS belongs to the SLLIMM-nano 2nd series IPM product line, engineered specifically for compact, high-efficiency inverter solutions in built-in motor applications where thermal performance, EMI reduction, and integration density are critical.

FAQ

What logic voltage levels does STGIPQ3H60T-HZS support on HIN/LIN inputs?

STGIPQ3H60T-HZS accepts 3.3 V, 5 V, and 15 V TTL/CMOS logic inputs with built-in hysteresis and 375 kΩ pull-down resistors. The high-level threshold is 2.25 V minimum; low-level threshold is 0.8 V maximum. No external level-shifting circuitry is required for compatibility with common microcontrollers.

How is thermal protection implemented using the T/SD/OD pin?

The T/SD/OD pin integrates an NTC thermistor connected between the pin and GND, with an internal 125 kΩ pull-down. When biased with 3.3 V or 5 V via external R_SD (1 kΩ or 2.2 kΩ), the resulting voltage drop decreases predictably with rising temperature. This analog signal can trigger MCU ADC thresholds or feed the internal comparator for automatic shutdown.

Can the op-amp and comparator be used simultaneously for current sensing and fault protection?

Yes - the op-amp (pins OP+, OP−, OPOUT) and comparator (pins CIN, T/SD/OD) operate independently. The op-amp conditions shunt voltage for precise current measurement, while the comparator monitors the same or separate shunt signal against its 0.54 V reference to generate fast overcurrent interrupts with <200 ns propagation delay to U-phase disable.

What is the purpose of the dual N-terminal configuration (NU, NV, NW)?

NU, NV, and NW provide separate emitter return paths for each low-side IGBT, enabling independent current sensing per phase leg and minimizing ground loop interference. This layout supports three-shunt or single-shunt topologies and ensures accurate current reconstruction in vector-controlled PMSM/BLDC drives without shared-path error coupling.