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Home > Products > Discrete Semiconductor Products > Transistors > Special Purpose

STMicroelectronics STP12IE90F4

Name: STP12IE90F4
Brand: STMicroelectronics
SKU: STP12IE90F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP12IE90F4

Manufacturer:: STMicroelectronics

Category:: Special Purpose

Package:: TO-220-4 Full Pack

Datasheet:: STP12IE90F4.pdf

Description:: TRANS BIPO EMITTER SW TO-220FP-4

Quantity:: RFQ Add To RFQ list

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Inventory:7,137

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Product details

Overview

STP12IE90F4 from STMicroelectronics is an Emitter-Switched Bipolar Transistor (ESBT®) optimized for high-voltage, high-frequency flyback and forward SMPS topologies. It delivers 900 V collector-source blocking voltage, 12 A continuous collector current, 0.083 Ω equivalent on-resistance, and fast switching up to 150 kHz in adapter and desktop power supplies.

For engineers reviewing the STP12IE90F4 datasheet, STP12IE90F4 pinout, STP12IE90F4 application, or STP12IE90F4 equivalent, key selection criteria include its cascode configuration enabling squared RBSOA at 900 V, low Ciss with 47 Ω gate drive, and verified 610 ns storage time under 6 A inductive load conditions.

Technical Context

The STP12IE90F4 integrates a high-voltage bipolar transistor and a low-voltage MOSFET in monolithic cascode configuration, eliminating external base drive complexity. Its VCS(ON) of 1 V at IC = 12 A and IB = 2.4 A enables low conduction loss, while VGS(th) of 2–4 V ensures reliable gate control with standard 10 V logic-level drive.

It features a squared Reverse Bias Safe Operating Area (RBSOA) up to 900 V and achieves 900 V snubberless switching with hFE = 5 and RG = 47 Ω. Dynamic performance includes VCS(dyn) = 3.37 V (500 ns) and 1.75 V (1 µs) under 400 V clamp, confirming robust transient voltage handling in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CS(SS)	900 V - Enables direct use in universal-input offline SMPS without voltage derating.
I_C	12 A - Supports ≥150 W continuous output power in flyback converters at 100 kHz.
R_CS(ON)	0.083 Ω - Reduces conduction loss to ≤1.2 W at 12 A, improving thermal margin in TO-220FP-4L.
t_s (inductive)	610 ns - Minimizes energy loss during turn-off transition at 6 A/720 V clamp condition.
C_iss	520 pF - Ensures stable 150 kHz operation with 47 Ω gate resistor, limiting driver power dissipation.
T_J(max)	150 °C - Allows full-rated operation with case temperature ≤100 °C given R_thj-case ≤6 °C/W.
V_GS(th)	2–4 V - Guarantees turn-on with standard 3.3 V or 5 V microcontroller GPIO when buffered.

Pinout & Package

STP12IE90F4 is housed in a TO-220FP-4L package with insulated tab, featuring four terminals: Collector (C), Emitter (E), Base (B), and Gate (G). The package provides 6 °C/W junction-to-case thermal resistance and supports surface-mount-compatible through-hole assembly.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	High-voltage power input node	Connected to primary winding drain in flyback; withstands 900 V DC blocking.
Emitter (E)	Power return path and reference node	Serves as common source for gate/base drive and current sensing point.
Base (B)	Current-controlled bipolar control terminal	Driven by MOSFET emitter follower; sets hFE-dependent collector current.
Gate (G)	Voltage-controlled MOSFET input	Receives 10 V logic-level drive; controls base current via integrated MOSFET.

Key Features

Feature	Design Value
Cascode ESBT architecture	Eliminates need for isolated base drive circuitry while maintaining 900 V blocking capability.
Squared RBSOA up to 900 V	Enables reliable operation under high-voltage inductive switching without snubber networks.
Low C_iss (520 pF) with 47 Ω gate drive	Reduces gate driver power consumption and simplifies layout for <150 kHz designs.
V_CS(ON) = 1 V @ 12 A	Lowers conduction losses versus conventional IGBTs, improving efficiency in 65–150 W adapters.
TO-220FP-4L with insulated tab	Permits direct heatsink mounting without isolation hardware, reducing BOM cost and assembly steps.

Applications

Adapter Power Supply

Desktop PC SMPS

Use Scenario: Universal-input (90–264 VAC) 65 W laptop adapter with active clamp flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 100 kHz with zero-voltage switching assistance.

Use Value: 0.083 Ω R_CS(ON) reduces conduction loss by 35% vs. comparable 900 V IGBTs, lowering heatsink requirements.

Use Scenario: 250 W ATX main converter using forward topology with synchronous rectification.

IC Role / Device Role / Timing Role: Main power switch controlling transformer primary with 130 kHz PWM frequency.

Use Value: 610 ns storage time minimizes overlap loss during hard-switching transitions, improving full-load efficiency by 1.2%.

Flyback LED Driver

Industrial AC-DC Module

Use Scenario: Constant-current 40 W LED driver for street lighting with 305 VAC surge immunity.

IC Role / Device Role / Timing Role: Isolated high-side switch regulating output via primary-side sensing.

Use Value: Squared RBSOA at 900 V eliminates need for TVS clamping during 4 kV surge events per IEC 61000-4-5.

Use Scenario: DIN-rail mounted 120 W industrial AC-DC module operating continuously at 60 °C ambient.

IC Role / Device Role / Timing Role: Primary-side switching element in dual-forward topology with forced-air cooling.

Use Value: 150 °C max junction temperature and 6 °C/W R_thj-case enable 100% load derating at 85 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC60KD	600 V IGBT with 10 A rating; higher V_CE(sat) (2.2 V) and slower t_f (120 ns).	Requires snubber network above 400 V; unsuitable for 900 V flyback without redesign.	Select only if system voltage ≤600 V and thermal budget allows higher conduction loss.
IXTP50N10P	100 V N-channel MOSFET; 50 A rating but no inherent high-voltage blocking capability.	Cannot replace directly-requires external cascode or gate-drive isolation for >200 V operation.	Use only in low-voltage auxiliary supplies or as part of discrete cascode design.

Compared with STGP10NC60KD and IXTP50N10P, STP12IE90F4 uniquely combines 900 V blocking, cascode-integrated drive, and sub-1 V on-state voltage-enabling compact, snubberless, high-efficiency flyback designs where voltage and speed constraints rule out alternatives.

Availability

STP12IE90F4 is available at Aetrix Electronics and suitable for adapter power supply, desktop PC SMPS, and industrial AC-DC module designs requiring stable component supply and long-lifecycle support.

Supply support for STP12IE90F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The ESBT® product line targets high-frequency, high-voltage switched-mode power supplies, delivering integrated cascode solutions that simplify gate drive and improve RBSOA performance beyond discrete or IGBT alternatives.

FAQ

Is STP12IE90F4 still in active production?

No-STP12IE90F4 is marked "Obsolete Product(s)" in the official ST datasheet (Rev 2, Jan 2007). However, Aetrix Electronics maintains legacy inventory with full traceability and offers engineering support for continuity in existing designs.

What is the recommended gate drive voltage and resistor value?

The datasheet specifies V_GS = 10 V for rated performance, with R_G = 47 Ω used in all switching timing measurements. This value balances switching speed (610 ns t_s) and gate oscillation suppression under 6 A inductive loads.

Can STP12IE90F4 be used without a heatsink?

No-its P_tot = 21 W at T_c = 25°C and R_thj-case ≤6 °C/W requires active heatsinking. At 12 A conduction, even with 1 V V_CS(ON), power dissipation exceeds 12 W, necessitating ≥15 cm² aluminum heatsink for safe operation.

How does ESBT differ from a standard IGBT in flyback applications?

Unlike IGBTs, the ESBT's monolithic cascode structure provides inherently squared RBSOA up to 900 V and lower V_CE(sat) (1 V vs. typical 2–3 V), enabling snubberless operation and reduced conduction loss-critical for compact, high-efficiency flyback converters.

STP12IE90F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: ESBT®

Package/Case:: TO-220-4 Full Pack

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN - Emitter Switched Bipolar

Applications:: Gate Driver

Voltage - Rated:: 900V

Current Rating (Amps):: 12A

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP12IE90F4 FAQ

1.How can I place an order for STP12IE90F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP12IE90F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP12IE90F4 reliable?

The price and inventory of STP12IE90F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP12IE90F4 is usually 5 days.

3.What payment methods are accepted for STP12IE90F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP12IE90F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP12IE90F4?

STP12IE90F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP12IE90F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP12IE90F4?

For technical support, including STP12IE90F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP12IE90F4 requirements.

6.How does Aetrix verify that STP12IE90F4 is sourced from the original manufacturer or authorized distributors?

All STP12IE90F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP12IE90F4 meets industry standards.

7.What is the process for return or replacement of STP12IE90F4?

All STP12IE90F4 units undergo pre-shipment inspection (PSI). If there is an issue with STP12IE90F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP12IE90F4 part is unused and in its original packaging.

Return procedure for STP12IE90F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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