STMicroelectronics STPS1L30M

Overview

STPS1L30M from STMicroelectronics is a low-drop single Schottky rectifier optimized for high-frequency DC-DC converters and switch-mode power supplies, featuring 1 A average forward current (IF(AV)), 30 V repetitive peak reverse voltage (VRRM), and a typical forward voltage drop of 0.33 V at 1 A and 25°C - enabling high-efficiency operation in battery-powered portable electronics including notebooks, PDAs, and PCMCIA cards.

For engineers reviewing the STPS1L30M datasheet, STPS1L30M pinout, STPS1L30M application, or STPS1L30M equivalent, key selection criteria include its ultra-low VF, 20 °C/W junction-to-case thermal resistance, avalanche-rated 1200 W peak power capability, and STmite (DO-216AA) surface-mount package suited for space-constrained, thermally sensitive designs.

Technical Context

This Schottky diode leverages a planar metal-semiconductor junction to eliminate minority-carrier storage delay, delivering negligible switching losses and extremely fast recovery (dV/dt = 10,000 V/µs). Its low thermal resistance (Rth(j-c) = 20 °C/W) and rated Tj(max) = 150°C support stable conduction under pulsed loads up to 50 A (10 ms sine half-cycle).

The device is characterized with defined static parameters across temperature: IR ≤ 0.39 mA at VR = 30 V and Tj = 25°C, and VF ≤ 0.39 V at IF = 1 A and Tj = 25°C. Avalanche energy handling is specified per pulse duration and junction temperature, with PARM = 1200 W at tp = 1 µs and Tj = 25°C.

Key Specifications

Pinout & Package

STPS1L30M is housed in the STmite package (JEDEC DO-216AA), a compact surface-mount plastic case with a single cathode tab and anode lead. The package features low profile (H = 3.6–3.9 mm), minimal footprint (E × D ≈ 1.75–2.05 mm), and integrated thermal path via the cathode tab to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SS13-E3/5AT and SB130, STPS1L30M delivers superior efficiency in space-constrained, thermally sensitive 3–12 V systems due to its 0.33 V typical VF, 20 °C/W Rth(j-c), and miniature STmite package - making it optimal for next-gen portable power stages where every milliwatt and square millimeter matters.

Availability

STPS1L30M is available at Aetrix Electronics and suitable for USB-C power adapters, notebook DC-DC converters, and PCMCIA card power management requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for STPS1L30M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STPS1L30M belongs to ST's STmite Schottky rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in portable and space-constrained applications where low VF and minimal thermal resistance are critical.

FAQ

What is the maximum junction temperature and how does it affect reliability?

The STPS1L30M has a maximum operating junction temperature (Tj) of 150°C. Exceeding this value risks thermal runaway, especially under high ambient conditions or insufficient PCB copper area. Its Rth(j-c) = 20 °C/W means that with 1 W dissipation and 60°C case temperature, junction temperature reaches 80°C - well within safe margin. Derating curves in Figure 2 confirm 1 A IF(AV) is sustainable up to 125°C ambient when δ = 0.5.

Can STPS1L30M be used in synchronous rectification circuits?

No - STPS1L30M is a passive Schottky rectifier, not a controlled switch. It lacks gate drive capability and cannot replace MOSFETs in synchronous rectification. However, its near-zero reverse recovery charge and low VF make it ideal as a freewheeling or output rectifier in non-synchronous topologies such as standard buck, flyback, or boost converters where simplicity and cost matter more than peak efficiency.

How does the STmite package compare thermally to SOD-123 or SMA packages?

The STmite (DO-216AA) package offers Rth(j-c) = 20 °C/W, significantly better than SOD-123 (~300 °C/W) and comparable to SMA (~25 °C/W), due to its exposed cathode tab acting as a direct thermal path to PCB copper. Unlike SOD-123, STmite's tab enables effective heatsinking without additional thermal vias; unlike SMA, it achieves similar thermal performance in ~40% less board area (2.0 × 1.9 mm vs. 4.5 × 2.7 mm).

Is avalanche capability tested per unit or guaranteed by design?

Avalanche capability is a guaranteed parameter: PARM = 1200 W at tp = 1 µs and Tj = 25°C is specified in Absolute Ratings (Table 3) and validated per ST's internal qualification standards. Figure 3 and Figure 4 provide normalized derating curves for pulse duration and junction temperature, allowing designers to calculate safe single-pulse energy limits - e.g., at tp = 10 µs, PARM drops to ~400 W, supporting robustness against inductive kick in compact DC-DC magnetics.