STMicroelectronics STPS20L45CFP

Overview

STPS20L45CFP from STMicroelectronics is a dual-center-tap low-drop Schottky rectifier in insulated TO-220FPAB package, rated for 45 V repetitive peak reverse voltage, 2 × 10 A average forward current per diode, and 150 °C maximum junction temperature. It delivers typ. 0.44 V forward voltage at 10 A/125 °C and supports high-frequency DC–DC converters and SMPS with low conduction and switching losses.

For engineers reviewing the STPS20L45CFP datasheet, STPS20L45CFP pinout, STPS20L45CFP application, or STPS20L45CFP equivalent, key selection criteria include its insulated 2000 VRMS case rating, avalanche capability (285 W, 10 µs), thermal resistance (Rth(j-c) = 4.5 °C/W per diode), and dual-diode center-tap configuration for synchronous rectification and polarity protection.

Technical Context

This device integrates two independent Schottky diodes sharing a common cathode connection in a center-tap topology, enabling use in full-wave rectification and bidirectional freewheeling paths. Its low VF and absence of minority-carrier storage enable zero-recovery operation up to several MHz.

The TO-220FPAB package provides electrical insulation between the mounting tab and internal die, supporting direct heatsink mounting without isolation hardware. Thermal coupling between diodes is characterized by Rth(c) = 2.5 °C/W, allowing accurate junction temperature estimation when both diodes conduct simultaneously.

Key Specifications

Pinout & Package

STPS20L45CFP uses the TO-220FPAB package: insulated plastic housing with metal tab electrically isolated from internal semiconductor terminals. Mounting hole diameter is 3.0–3.2 mm; recommended torque is 0.55 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VS-20CPH04-M3 and MBR2045CT, STPS20L45CFP uniquely combines 45 V rating, sub-0.45 V VF, and certified 2000 VRMS insulation - making it optimal for space-constrained, safety-critical 48 V input or automotive-grade DC–DC designs requiring direct heatsink mounting.

Availability

STPS20L45CFP is available at Aetrix Electronics and suitable for server VRMs, industrial DC–DC converters, and automotive infotainment power supplies requiring stable component supply, long-term lifecycle support, and guaranteed ECOPACK®2 compliance.

Supply support for STPS20L45CFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STPS series targets high-efficiency power conversion, with STPS20L45CFP specifically engineered for low-voltage, high-current Schottky rectification in thermally demanding, safety-certified applications.

FAQ

What is the maximum continuous forward current per diode at 100 °C case temperature?

At TC = 100 °C, the device supports 20 A total forward current - meaning 10 A per diode continuously. This is confirmed in Table 2 of the datasheet under "IF(AV) Per device" for TO-220FPAB, with derating applied above 100 °C using Figure 2.

Can STPS20L45CFP be used in non-isolated buck converters?

Yes - the insulated TO-220FPAB tab allows safe mounting to a grounded heatsink even when the cathode (K) is tied to system ground. This enables direct use in low-side synchronous rectifier configurations without isolation hardware or voltage rating compromises.

How does the dual-center-tap configuration affect PCB layout compared to discrete diodes?

The integrated A1–K–A2 structure eliminates separate cathode traces and matching components. Layout requires only three pads (A1, A2, K), reducing copper area, parasitic inductance, and assembly cost - especially beneficial in high-frequency (>300 kHz) layouts where loop inductance impacts EMI and efficiency.

Is avalanche capability tested per diode or per device?

Avalanche capability is specified per diode: PARM = 285 W for tp = 10 µs at Tj = 125 °C (Table 2). Each diode can independently withstand this energy level, enabling robust operation in transformer reset or inductive switching applications where one diode may absorb transient energy alone.