STMicroelectronics STPS20M60CR

Overview

STPS20M60CR from STMicroelectronics is a dual common-cathode Schottky rectifier in I2PAK package, rated for 60 V repetitive peak reverse voltage and 2 × 10 A average forward current per diode at T_c = 135 °C. It delivers low forward voltage drop (V_F = 0.370 V typ. at 10 A, 125 °C), avalanche-rated operation (V_ARM = 80 V), and thermal resistance of 1.5 °C/W (junction-to-case per diode), targeting high-efficiency AC/DC adapters for notebooks and desktop PCs.

For engineers reviewing the STPS20M60CR datasheet, STPS20M60CR pinout, STPS20M60CR application, or STPS20M60CR equivalent, key selection criteria include dual-diode conduction loss modeling (P = 0.375 × I_F(AV) + 0.0135 × I_F(RMS)²), avalanche energy capability (13.6 kW pulse, t_p = 1 µs), junction temperature derating, and I2PAK thermal interface requirements.

Technical Context

This dual Schottky rectifier integrates two independent anodes (A1, A2) sharing a single cathode (K) in a monolithic silicon die, enabling synchronous conduction paths in center-tapped or dual-output SMPS topologies. Its low V_F and absence of minority-carrier storage minimize switching losses and eliminate reverse recovery charge.

The device operates with maximum junction temperature of 150 °C and is qualified for repetitive avalanche events up to 13.6 kW (t_p = 1 µs), validated per AN1768 and AN2025. Thermal coupling between diodes is quantified by R_th(c) = 0.2 °C/W, critical for accurate multi-diode power dissipation modeling under simultaneous conduction.

Key Specifications

Pinout & Package

Package: I2PAK (TO-263AB), surface-mount with isolated tab, epoxy UL94 V0 compliant, recommended torque 0.4–0.6 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with STPS20M60CT and STPS20M60CG-TR, the STPS20M60CR offers the best balance of surface-mount reliability, thermal interface simplicity, and manufacturing scalability-its I2PAK footprint supports robust mechanical anchoring while enabling tighter thermal design than TO-220AB and lower assembly cost than D2PAK reel packaging.

Availability

STPS20M60CR is available at Aetrix Electronics and suitable for notebook adapters, desktop PC power supplies, and gaming console chargers requiring stable component supply, consistent thermal performance, and long-term industrial availability.

Supply support for STPS20M60CR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STPS20M60C series belongs to ST's high-efficiency power rectifier product line, engineered specifically for high-frequency switch-mode power supplies where low V_F, avalanche ruggedness, and dual-diode integration reduce system size and improve energy conversion efficiency.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The STPS20M60CR has a maximum junction temperature (T_j) of 150 °C. This limit governs allowable power dissipation: for example, at 10 A average current per diode and V_F = 0.45 V, power per diode is ~4.5 W, requiring a case-to-ambient thermal path ≤33 °C/W to maintain T_j ≤150 °C with 25 °C ambient. Derating curves in Figure 4 and 5 must be applied for pulse or elevated ambient conditions.

Can STPS20M60CR replace two separate 10 A Schottky diodes?

Yes-STPS20M60CR integrates two independent 10 A Schottky diodes with a shared cathode in one I2PAK package. It replaces discrete TO-220 or SMA diodes in dual-output SMPS designs, reducing PCB area, solder joints, and thermal interface variability. However, its common cathode requires circuit-level adaptation: both outputs must share the same reference potential, unlike fully isolated diodes.

Is avalanche rating tested per diode or combined?

Avalanche ratings (V_ARM = 80 V, P_ARM = 13.6 kW) are specified per diode, verified individually per AN1768 test methodology. When both diodes conduct simultaneously, thermal coupling (R_th(c) = 0.2 °C/W) increases total junction temperature, so simultaneous avalanche stress must be evaluated using combined power dissipation and derated V_ARM per Figure 12's safe operating area.

What is the recommended PCB copper area for optimal thermal performance?

Per Figure 11, thermal resistance junction-to-ambient (R_th(j–a)) drops from ~50 °C/W (no copper) to ~25 °C/W with 20 cm² of 35 µm copper on the component side. For reliable 10 A operation, ST recommends ≥15 cm² of internal or external copper pour connected to the I2PAK tab via ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to a solid ground plane.