STMicroelectronics STPS2L25AFN

Overview

STPS2L25AFN from STMicroelectronics is a 25 V, 2 A low-drop Schottky rectifier in SMA Flat Notch package, optimized for high-frequency DC/DC converters and synchronous rectification with MOSFETs. It delivers typ. 0.325 V forward voltage at 2 A and 125 °C, supports 90 A surge current, and is avalanche rated for robustness in transient-prone power stages such as battery chargers and telecom supplies.

For engineers reviewing the STPS2L25AFN datasheet, STPS2L25AFN pinout, STPS2L25AFN application, or STPS2L25AFN equivalent, key selection criteria include forward voltage at elevated temperature, thermal resistance (R_th(j-l) = 20 °C/W), avalanche energy rating (108 W at 10 µs), and ECOPACK2 compliance for RoHS- and halogen-free designs.

Technical Context

This Schottky rectifier uses a planar silicon structure with metal-semiconductor junction to achieve low conduction loss and fast switching without minority-carrier storage. Its VF vs. IF curve shows minimal temperature dependence-typ. 0.325 V at 125 °C/2 A-enabling stable efficiency across wide ambient ranges.

The device is rated for T_j(max) = 150 °C and features R_th(j-l) = 20 °C/W (SMA Flat Notch), enabling direct PCB copper conduction cooling. Avalanche capability (P_ARM = 108 W, t_p = 10 µs) allows safe operation under inductive turn-off stress without external snubbers.

Key Specifications

Pinout & Package

SMA Flat Notch package: surface-mount, cathode-indicating band, optimized for low thermal resistance via conduction cooling through leads. Dimensions per ST DS1245 Rev 7: D = 2.25–2.90 mm, E = 5.00–5.35 mm, E1 = 3.95–4.60 mm, L = 0.75–1.20 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with MBR225F-E3/52 and SS22, STPS2L25AFN offers superior thermal performance (20 vs. 25 °C/W), lower high-temp VF (0.325 V vs. ≥0.43 V), and guaranteed avalanche capability-critical for robustness in portable and telecom power stages where layout constraints and transient immunity are non-negotiable.

Availability

STPS2L25AFN is available at Aetrix Electronics and suitable for battery chargers, telecom DC/DC converters, SSD power management, and cordless appliance motor drives requiring stable component supply and long-term lifecycle support.

Supply support for STPS2L25AFN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STPS2L25AFN belongs to ST's high-efficiency Schottky rectifier product line, engineered specifically for miniaturized, high-frequency switched-mode power supplies where low VF, thermal resilience, and avalanche safety are mandatory.

FAQ

What is the maximum junction temperature and how does it affect layout?

The STPS2L25AFN has a maximum junction temperature of 150 °C. To maintain safe operation, PCB layout must provide adequate copper area under both leads-minimum 1 cm² per lead on 35 µm FR4-to achieve the specified R_th(j-a) ≤ 50 °C/W. Thermal vias under pads further reduce steady-state temperature rise.

Is STPS2L25AFN suitable for synchronous rectification with GaN FETs?

Yes. Its ultra-low forward voltage (0.325 V typ. at 125 °C) and fast switching response make it ideal for paralleling with GaN FETs in high-frequency (>500 kHz) topologies. The absence of reverse recovery charge eliminates shoot-through risk during gate transitions, unlike silicon PN diodes.

Does STPS2L25AFN require a heatsink in typical 2 A applications?

No heatsink is required. With R_th(j-l) = 20 °C/W and typical power dissipation of ~0.65 W at 2 A/125 °C, a 20 °C/W path to ambient (via 2 cm² copper) keeps T_j below 120 °C-even at 70 °C ambient-meeting industrial reliability targets without added mechanical complexity.

How does the avalanche rating improve system reliability?

The 108 W avalanche rating (10 µs pulse) allows the STPS2L25AFN to absorb inductive energy from transformer leakage or motor windings during MOSFET turn-off without failure. This eliminates reliance on external TVS or RC snubbers in cost-sensitive, space-constrained designs like cordless tools and telecom modules.