STMicroelectronics STPS2L30AFN

Overview

STPS2L30AFN from STMicroelectronics is a 30 V, 2 A low-drop Schottky rectifier in SMA Flat Notch package, optimized for high-frequency DC/DC converters and synchronous rectification with MOSFETs. It features typ. VF = 0.325 V at 2 A / 125 °C, Tj(max) = 150 °C, avalanche-rated (108 W), and ECOPACK2-compliant surface-mount construction.

For engineers reviewing the STPS2L30AFN datasheet, STPS2L30AFN pinout, STPS2L30AFN application, or STPS2L30AFN equivalent, key selection criteria include forward voltage drop at elevated temperature, thermal resistance junction-to-lead (20 °C/W), repetitive peak reverse voltage (30 V), surge current capability (75 A), and package-specific derating curves for ambient temperature and copper area.

Technical Context

This Schottky rectifier uses a single-chip silicon structure to minimize conduction losses while maintaining controlled reverse leakage-typ. IR = 6 mA at 100 °C and VR = 30 V. Its low VF and optimized trade-off between conduction and reverse losses enable highest efficiency in compact, high-switching-frequency power supplies.

The device supports parallel operation with MOSFETs in synchronous rectification topologies and is rated for repetitive avalanche energy (PARM = 108 W, tp = 10 µs, Tj = 125 °C). Thermal performance varies by package: SMA Flat Notch achieves Rth(j-l) = 20 °C/W and requires specific PCB copper area per lead for optimal derating.

Key Specifications

Pinout & Package

SMA Flat Notch package: surface-mount, cathode indicated by band, UL94 V0 epoxy, lead-free, optimized for conduction cooling. Dimensions: D = 2.25–2.90 mm, E = 5.00–5.35 mm, E1 = 3.95–4.60 mm, L = 0.75–1.20 mm, G = 2.00 mm, G1 = 0.85 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with STPS2L30A and STPS2L30UF, STPS2L30AFN offers balanced thermal performance (20 °C/W), standardized SMA Flat Notch footprint for automated assembly, and optimal VF/IR trade-off for mid-power DC/DC converters operating up to 130 °C ambient.

Availability

STPS2L30AFN is available at Aetrix Electronics and suitable for battery charger input stages, SSD power rail rectification, and telecom DC/DC modules requiring stable component supply, long-term lifecycle support, and ECOPACK2 environmental compliance.

Supply support for STPS2L30AFN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STPS2L30AFN belongs to ST's high-efficiency Schottky rectifier product line, engineered specifically for compact, high-frequency switched-mode power supplies where low VF, avalanche ruggedness, and thermal predictability are critical.

FAQ

What is the cathode marking convention for STPS2L30AFN?

The cathode is identified by a visible band on the SMA Flat Notch package body, aligned with the terminal designated as Cathode in the mechanical drawing (Figure 20). This band corresponds to the shorter lead side in the recommended footprint (Figure 21), and must be oriented toward the output rail during placement.

Can STPS2L30AFN replace STPS2L30A in an existing SMA footprint?

No-STPS2L30AFN uses the SMA Flat Notch package, which has different mechanical dimensions (e.g., G = 2.00 mm notch depth, E = 5.00–5.35 mm width) versus the standard SMA (E = 4.80–5.35 mm, no notch). Footprint and stencil must be updated per Figure 21 to ensure solder joint reliability and thermal conduction.

How does the 108 W avalanche rating translate to real-world circuit protection?

The 108 W rating (at tp = 10 µs, Tj = 125 °C) means the device can absorb up to 1.08 mJ of single-pulse avalanche energy. In practice, this protects against voltage spikes ≤30 V × √(2 × 1.08 mJ / 10 µs) ≈ 46 V for 10 µs duration-sufficient for most MOSFET turn-off transients in 30 V-rated DC/DC secondaries.

Is STPS2L30AFN suitable for synchronous rectification with GaN FETs?

Yes-its fast recovery (<100 ns), low Qrr, and low VF make it compatible with GaN-based synchronous rectifiers operating up to 1 MHz. However, layout must minimize loop inductance, and thermal interface to PCB copper must meet the 2.0 cm²/lead recommendation to maintain Tj ≤150 °C under 2 A continuous load.