STMicroelectronics STPS2L30UF

Overview

STPS2L30UF from STMicroelectronics is a 30 V, 2 A low-drop Schottky rectifier in SMB Flat package, optimized for high-frequency DC/DC converters and synchronous rectification with MOSFETs. It features typ. VF = 0.325 V at 2 A / 125 °C, 150 °C max junction temperature, avalanche-rated operation, and ECOPACK2 compliance.

For engineers reviewing the STPS2L30UF datasheet, STPS2L30UF pinout, STPS2L30UF application, or STPS2L30UF equivalent, key selection criteria include forward voltage drop at elevated temperature, thermal resistance (R_th(j-l) = 15 °C/W), surge current rating (75 A), and compatibility with compact surface-mount power topologies requiring minimal conduction loss.

Technical Context

This Schottky rectifier uses a single-chip silicon design with metal–semiconductor junction to achieve low VF and fast switching-no minority-carrier storage delay. Its 30 V V_RRM and 2 A I_F(AV) rating target mid-power secondary-side rectification where efficiency and thermal margin are critical.

The device supports parallel operation with MOSFETs in synchronous rectification circuits and is rated for repetitive avalanche energy (108 W at 10 µs, T_j = 125 °C). Thermal performance is defined across three mounting conditions: SMA, SMA Flat/Notch, and SMB Flat-with R_th(j-l) = 15 °C/W for SMB Flat enabling higher power density.

Key Specifications

Pinout & Package

SMB Flat package: surface-mount, lead-free, cathode marked by band on body; dimensions D = 3.30–3.95 mm, E = 5.10–5.60 mm, b = 1.95–2.20 mm, A = 0.90–1.10 mm, weight = 0.050 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with NSS2L30MX and SS23, STPS2L30UF delivers the lowest VF at high temperature and best thermal resistance in an ultra-compact flat SMT package-making it optimal for space-constrained, thermally demanding DC/DC outputs where every millivolt and degree matters.

Availability

STPS2L30UF is available at Aetrix Electronics and suitable for battery chargers, telecom DC/DC converters, and SSD power management systems requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for STPS2L30UF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STPS2L30UF belongs to ST's high-efficiency Schottky rectifier product line, engineered specifically for high-frequency, low-voltage DC/DC conversion where minimizing conduction loss and maximizing thermal performance are primary design goals.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance of STPS2L30UF in SMB Flat package?

For SMB Flat, ST recommends ≥100 mm² of 35 µm-thick copper per lead to achieve R_th(j-a) ≤ 50 °C/W. Figure 15 shows R_th(j-a) drops from 5.0 °C/W (0 cm²) to 2.2 °C/W at 200 cm². Use two 5 mm × 10 mm thermal pads-one under each lead-with internal plane connection for best results.

Does STPS2L30UF support parallel operation with MOSFETs in synchronous rectification, and what layout considerations apply?

Yes-the datasheet explicitly states it is "ideal for use in parallel with MOSFETs in synchronous rectification." Layout must minimize loop inductance: place STPS2L30UF adjacent to the synchronous FET, use short wide traces for anode/cathode, and avoid shared ground paths between control and power return.

Is STPS2L30UF rated for repetitive avalanche energy, and what test conditions define that rating?

Yes-PARM = 108 W at T_j = 125 °C, t_p = 10 µs (square pulse). This rating ensures survivability during voltage spikes caused by transformer leakage inductance or MOSFET turn-off transients in flyback and resonant topologies.

How does the VF temperature coefficient of STPS2L30UF compare to standard Schottky diodes, and why does it matter?

VF decreases with rising temperature (negative TC), reaching 0.325 V at 125 °C-lower than its 25 °C value of 0.45 V. This improves efficiency under thermal stress, unlike PN diodes whose VF rises with temperature, making STPS2L30UF especially valuable in enclosed or high-ambient designs.