STMicroelectronics STPS30H60CGY-TR

Overview

STPS30H60CGY-TR from STMicroelectronics is a dual-center-tab automotive-grade Schottky rectifier in D2PAK package, rated for 60 V repetitive peak reverse voltage, 30 A total average forward current (15 A per diode), and 175 °C maximum junction temperature. It delivers low forward voltage drop (typ. 535 mV at 15 A, 125 °C) with low leakage current (25 mA at 125 °C, 60 V), enabling high-efficiency power conversion in engine control units and DC-DC converters.

For engineers reviewing the STPS30H60CGY-TR datasheet, STPS30H60CGY-TR pinout, STPS30H60CGY-TR application, or STPS30H60CGY-TR equivalent, key selection criteria include avalanche rating (715 W, 10 µs), thermal resistance (0.8 °C/W junction-to-case total), AEC-Q101 qualification, and dual-diode symmetry for balanced current sharing in parallel-output SMPS designs.

Technical Context

This dual Schottky rectifier integrates two identical, thermally coupled diodes in a single D2PAK package with shared center tab for mechanical and thermal anchoring. Each diode operates independently with matched VF and IR characteristics across temperature, supporting symmetrical current division in interleaved or dual-rail topologies.

Its avalanche-rated capability (PARM = 715 W at Tj = 125 °C, tp = 10 µs) enables robust transient energy absorption without external snubbers, while the low Rth(j-c) of 0.8 °C/W (total package) supports high-power density mounting on copper-clad PCBs or heatsinks.

Key Specifications

Pinout & Package

Package: D2PAK (TO-263AB), surface-mount, single-center-tab configuration with three terminals: two anodes (A1, A2) and one common cathode (K). The center tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with STPS30H60CG-TR and VS-30CPH06-M3/45, the STPS30H60CGY-TR uniquely combines AEC-Q101 qualification, 715 W avalanche capability, and 535 mV VF-making it the only option qualified for under-hood 48 V power conversion where reliability, thermal headroom, and transient resilience are jointly mandated.

Availability

STPS30H60CGY-TR is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, on-board chargers, and electric power steering systems requiring stable component supply across extended product lifecycles.

Supply support for STPS30H60CGY-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's automotive-qualified power diode portfolio, engineered specifically for high-reliability, high-temperature power conversion in 48 V mild-hybrid and next-generation vehicle architectures.

FAQ

Is STPS30H60CGY-TR pin-compatible with STPS30H60CG-TR?

Yes-both share identical D2PAK package dimensions, terminal layout (A1/A2/K), and mechanical footprint. The center tab is cathode-connected in both, and thermal pad alignment matches exactly. No PCB redesign is needed when upgrading from CG to CGY for AEC-Q101 compliance.

What is the maximum continuous power dissipation at 100 °C case temperature?

Using Rth(j-c) = 0.8 °C/W and Tj(max) = 175 °C, maximum allowable power is (175 − 100) / 0.8 = 93.75 W. However, electrical limits constrain practical dissipation: at 30 A total IF(AV), conduction loss is ~15.6 W (per datasheet equation P = 0.45×IF(AV) + 0.008×IF²), well within thermal margin.

Does this device require a heatsink in typical automotive applications?

A heatsink is recommended for sustained 30 A operation above 70 °C ambient. At 25 °C ambient, the device can dissipate ~30 W with 25 cm² copper area (Rth(j-a) ≈ 15 °C/W); above 85 °C ambient, a bolted heatsink reducing Rth(j-a) to ≤5 °C/W is advised to maintain Tj < 150 °C.

How does the dual-diode structure affect PCB layout versus single-diode alternatives?

The dual configuration allows symmetrical trace routing from two switch nodes to a common cathode, minimizing loop inductance and thermal gradient imbalance. Layout must preserve equal copper area and thickness for both A1 and A2 traces, and the center-tab cathode must be connected to ≥25 mm² thermal pad with ≥4 thermal vias to inner ground planes.