STMicroelectronics STPS30L30CT

Overview

STPS30L30CT from STMicroelectronics is a dual center-tap low-drop Schottky rectifier in TO-220AB package, rated for 2 × 15 A average forward current per diode, 30 V repetitive peak reverse voltage, and 150 °C maximum junction temperature. It delivers 0.37 V typical forward voltage at 15 A and 125 °C, enabling high-efficiency operation in low-voltage DC–DC converters.

For engineers reviewing the STPS30L30CT datasheet, STPS30L30CT pinout, STPS30L30CT application, or STPS30L30CT equivalent, key selection criteria include conduction loss modeling (P = 0.24×IF(AV) + 0.009×IF²(RMS)), avalanche capability (VARM = 45 V, PARM = 5300 W), thermal resistance (Rth(j–c) = 1.5 °C/W per diode), and center-tap dual-diode topology for synchronous rectification or freewheeling.

Technical Context

This device integrates two independent Schottky diodes sharing a common cathode (center-tap configuration), enabling bidirectional current handling in half-bridge or push-pull topologies. Its negligible switching losses and extremely fast recovery eliminate reverse recovery charge, making it suitable for >100 kHz switching frequencies.

The diode pair supports simultaneous conduction with thermally coupled junctions-junction-to-case thermal resistance is 1.5 °C/W per diode, but coupling resistance between diodes is only 0.1 °C/W, allowing accurate thermal modeling when both diodes operate under load.

Key Specifications

Pinout & Package

STPS30L30CT is housed in a TO-220AB package with isolated metal tab (electrically connected to cathode K). The three terminals are arranged linearly: Pin 1 (A1) = Anode 1, Pin 2 (K) = Common Cathode (center tap), Pin 3 (A2) = Anode 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-center-tap Schottky rectifier applications.

Compared with VS-30CPQ030 and MBR3030CT, STPS30L30CT offers superior thermal performance (0.5 °C/W lower Rth(j–c)), 8% lower VF at operating temperature, and guaranteed avalanche energy handling-critical for unclamped inductive switching in compact power supplies.

Availability

STPS30L30CT is available at Aetrix Electronics and suitable for switch-mode power supplies, DC–DC converters, and polarity protection circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for STPS30L30CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STPS30L30CT belongs to ST's Power Schottky Rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion where low VF, fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the electrical connection between the metal tab and the device terminals?

The metal tab of the STPS30L30CT in TO-220AB package is electrically connected to the common cathode (K) terminal. This requires electrical isolation from the heatsink unless the cathode node is at chassis or system ground potential. Mounting torque must be maintained between 0.4–0.6 N·m to ensure thermal contact without mechanical damage.

Can STPS30L30CT replace a single-diode Schottky in a center-tap transformer design?

Yes-STPS30L30CT is explicitly designed for center-tap transformer topologies. Its A1–K–A2 pinout matches standard center-tap rectifier layouts, eliminating the need for two discrete diodes and associated layout complexity. Both anodes operate independently, supporting true dual-path conduction with shared cathode return.

How is avalanche energy calculated for STPS30L30CT in transient suppression applications?

Avalanche energy is derived from PARM = 5300 W at tp = 1 µs and VARM = 45 V. For a given transient pulse, energy = VARM × IAR × tp. With IAR limited to 35 A (per Figure 12), maximum single-pulse energy is 157.5 mJ. Derating curves in Figures 4 and 5 must be applied for pulses longer than 1 µs or junction temperatures above 25 °C.

Is STPS30L30CT suitable for automotive under-hood applications?

No-STPS30L30CT is not qualified to AEC-Q101 or automotive-grade specifications. While its 150 °C Tj rating exceeds typical under-hood ambient requirements, ST does not specify automotive qualification status, and the device lacks required test reports (e.g., HTOL, ESD, vibration) for automotive use. Industrial or telecom applications are appropriate.