STMicroelectronics STPS30L45CG-TR

Overview

STPS30L45CG-TR from STMicroelectronics is a dual-center-tap low-drop Schottky rectifier in D2PAK package, rated for 45 V repetitive peak reverse voltage and 2 × 15 A average forward current per diode at Tc = 135 °C (δ = 0.5), with max forward voltage of 0.50 V at 15 A and 125 °C. It features avalanche rating (6000 W, tp = 1 µs), low thermal resistance (Rth(j-c) = 0.85 °C/W total), and is optimized for high-frequency DC–DC converters and SMPS secondary-side rectification.

For engineers reviewing the STPS30L45CG-TR datasheet, STPS30L45CG-TR pinout, STPS30L45CG-TR application, or STPS30L45CG-TR equivalent, key selection criteria include its dual-diode center-tap configuration, D2PAK thermal performance, 45 V VRRM limit, avalanche ruggedness, and suitability for low-voltage, high-current freewheeling and polarity protection circuits.

Technical Context

This device integrates two independent Schottky diodes sharing a common cathode terminal (center-tap configuration), enabling synchronous rectification or dual-output DC–DC topologies. Its low VF (0.42–0.50 V typ. at 15 A/125 °C) minimizes conduction loss, while dV/dt capability of 10,000 V/µs supports fast-switching operation without spurious turn-on.

The D2PAK package provides enhanced thermal coupling to PCB copper (Rth(j-a) ~30–40 °C/W depending on copper area), and the device is avalanche-rated per diode with specified PARM = 6000 W (tp = 1 µs, Tj = 25 °C), enabling robust transient energy handling in inductive switching applications.

Key Specifications

Pinout & Package

The STPS30L45CG-TR is housed in a surface-mount D2PAK (TO-263) package with three terminals: two anodes (A1, A2) and one shared cathode (K). The metal tab is electrically connected to the cathode and serves as the primary thermal path to the PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VS-30CPH04-M3 and MBR3045CT, STPS30L45CG-TR uniquely combines center-tap integration, D2PAK SMT compatibility, 6000 W avalanche rating, and lowest VF in its class-making it optimal for space-constrained, high-reliability SMPS where layout simplicity and transient robustness are critical.

Availability

STPS30L45CG-TR is available at Aetrix Electronics and suitable for server VRMs, industrial DC–DC converters, telecom rectifier modules, and automotive infotainment power supplies requiring stable component supply across multi-year production cycles.

Supply support for STPS30L45CG-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STPS30L45C series belongs to ST's high-efficiency power rectifier product line, engineered specifically for low-voltage, high-current switching power supplies where Schottky performance, thermal manageability, and avalanche ruggedness are essential.

FAQ

What is the maximum junction temperature and how does it affect derating?

The absolute maximum junction temperature (Tj) is 150 °C. At this limit, the device must be operated below its rated IF(AV) to avoid thermal runaway-derating curves in Figure 2 show that ambient temperature above 75 °C requires linear reduction of average forward current. For example, at Tamb = 100 °C with δ = 0.5, IF(AV) must be reduced to ~9 A per diode using a 15 cm² copper pad.

Is the metal tab electrically isolated in the D2PAK package?

No-the metal tab of the STPS30L45CG-TR is internally connected to the common cathode (K) terminal and is not insulated. It must be mounted on a PCB copper pour tied to the system ground or output rail, and cannot be used with floating heatsinks unless fully isolated via dielectric interface material rated for ≥45 V working voltage.

How is avalanche capability tested and what real-world stress does it handle?

Avalanche capability is verified per JEDEC JESD24-11 using unclamped inductive switching (UIS) tests at tp = 1 µs, Tj = 25 °C, yielding PARM = 6000 W. This corresponds to surviving 220 A surge current (IFSM) with 27.3 V across the diode for 1 µs-matching worst-case energy in flyback snubberless designs or LLC resonant tank ringing.

Can STPS30L45CG-TR replace STPS30L45CT in existing TO-220AB designs?

No-mechanical and thermal interfaces differ significantly: STPS30L45CG-TR uses surface-mount D2PAK with cathode-tab soldering, while STPS30L45CT uses through-hole TO-220AB with isolated mounting hole. Electrical specs match, but PCB layout, thermal design, and assembly process must be redesigned; no drop-in replacement is possible.