STMicroelectronics STPS30L60CW

Overview

STPS30L60CW from STMicroelectronics is a dual-center-tap Schottky rectifier in TO-247 package, rated for 60 V repetitive peak reverse voltage and 30 A total forward RMS current (15 A per diode), with maximum forward voltage drop of 0.56 V at 15 A and 125 °C junction temperature. It delivers low conduction loss and negligible switching losses for high-frequency DC–DC converters and switched-mode power supplies.

For engineers reviewing the STPS30L60CW datasheet, STPS30L60CW pinout, STPS30L60CW application, or STPS30L60CW equivalent, key selection criteria include avalanche-rated operation (VARM = 80 V, PARM = 7800 W), thermal resistance (Rth(j-c) = 0.8 °C/W total), and dual-diode center-tap configuration enabling synchronous rectification in half-bridge topologies.

Technical Context

This device integrates two independent Schottky diodes sharing a common cathode terminal (center-tap configuration), enabling use in bridge rectifiers and synchronous flyback/fly-buck converters. Its low dV/dt rating (10,000 V/µs) supports fast-switching operation without parasitic turn-on.

Each diode features specified avalanche capability (VARM = 80 V, tp < 1 µs), validated per AN1768 and AN2025, and operates up to 150 °C junction temperature with thermal derating defined in Figures 4–5. Junction-to-case thermal resistance is 0.8 °C/W total (1.5 °C/W per diode) in TO-247 package.

Key Specifications

Pinout & Package

STPS30L60CW is housed in TO-247 package with three terminals: two anodes (A1, A2) and one shared cathode (K). The metal tab is electrically connected to the cathode and serves as primary thermal path. Mounting torque: 0.55 N·m (max 1.0 N·m).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky rectifier applications.

Compared with VS-30CPH06-M3 and MBR3060CT, STPS30L60CW offers superior avalanche ruggedness (7800 W), lower VF (0.56 V vs. 0.62/0.72 V), and better thermal performance (0.8 °C/W vs. 1.5–2.0 °C/W), making it optimal for high-reliability, high-frequency SMPS where transient robustness and efficiency are critical.

Availability

STPS30L60CW is available at Aetrix Electronics and suitable for server power supplies, industrial DC–DC converters, solar microinverters, and telecom rectifier modules requiring stable component supply and long-term manufacturability.

Supply support for STPS30L60CW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

STPS30L60CW belongs to ST's Power Schottky Rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion systems where low forward voltage, zero recovery charge, and avalanche ruggedness are mandatory.

FAQ

What is the electrical connection between the metal tab and internal terminals in STPS30L60CW?

The metal tab of the TO-247 package is electrically connected to the common cathode (K) terminal and serves as the primary thermal conduction path. It must be mounted to a grounded or cathode-referenced heatsink; isolation washers or insulating pads are not required unless system-level isolation is mandated elsewhere in the circuit.

Can STPS30L60CW replace two discrete Schottky diodes in a center-tap transformer design?

Yes - STPS30L60CW integrates two matched Schottky diodes with a shared cathode, directly replacing two discrete devices in center-tap configurations. This reduces component count, improves thermal tracking between diodes, eliminates interconnect inductance, and simplifies PCB layout versus separate TO-220 or D2PAK parts.

Is STPS30L60CW suitable for use with GaN or SiC primary-side switches?

Yes - its 10,000 V/µs dV/dt rating, zero reverse recovery charge, and 80 V avalanche voltage make it compatible with fast-switching GaN and SiC half-bridge topologies. It withstands high dv/dt stress without false turn-on and absorbs leakage inductance energy without external clamping in properly designed layouts.

What is the maximum continuous power dissipation for STPS30L60CW at 100 °C case temperature?

At Tc = 100 °C, maximum continuous power dissipation is calculated as (Tj(max) − Tc) / Rth(j-c) = (150 − 100) / 0.8 = 62.5 W total for both diodes. Derated conduction loss per diode at 15 A yields ~8.5 W each, confirming thermal feasibility within this limit under proper heatsink conditions.