STMicroelectronics STPSC10H065D

Overview

STPSC10H065D from STMicroelectronics is a 10 A, 650 V silicon carbide (SiC) Schottky power diode in insulated TO-220AC package, designed for high-efficiency PFC and hard-switching DC-DC converters. It delivers zero reverse recovery charge, temperature-independent switching, and 90 A non-repetitive surge capability at 25 °C case temperature - enabling robust operation in industrial SMPS and LLC resonant topologies.

For engineers reviewing the STPSC10H065D datasheet, STPSC10H065D pinout, STPSC10H065D application, or STPSC10H065D equivalent, key selection criteria include its 2.1–3.5 °C/W junction-to-case thermal resistance, 48 pF capacitance at 400 V, 1.98 V forward voltage at 10 A/150 °C, 2500 VRMS insulation rating, and ECOPACK®2 compliance for sustainable sourcing.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-voltage rectification stages. Its wide-bandgap construction eliminates minority-carrier storage, resulting in no reverse recovery current and negligible turn-off ringing - critical for reducing EMI and conduction losses in >100 kHz PFC boost stages.

The insulated TO-220AC package integrates 2500 VRMS isolation and 7 pF typical package capacitance, enabling direct mounting to heatsinks without additional insulators while minimizing parasitic coupling in high dv/dt environments like motor drives and server PSUs.

Key Specifications

Pinout & Package

STPSC10H065D uses an insulated TO-220AC package (ST part marking: "STPSC10H065D") with electrically isolated tab rated for 2500 VRMS. The device has two terminals: anode and cathode, mounted on opposite sides of the molded body; the tab serves as the cathode connection and is fully insulated from the heatsink mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A, STPSC10H065D trades 0.1 °C/W higher thermal resistance for integrated 2500 VRMS isolation - reducing bill-of-materials and assembly steps. Against DSSK10-06AS, it eliminates Q_rr-related losses entirely, enabling higher frequency and smaller magnetics in new designs.

Availability

STPSC10H065D is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar inverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STPSC10H065D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-reliability power conversion in demanding industrial and renewable energy applications.

FAQ

What is the maximum recommended case temperature for continuous operation?

The STPSC10H065D is rated for I_F(AV) = 10 A at T_C = 85 °C in insulated TO-220AC configuration. Operation above this requires derating per the I_F vs. T_C curve in Figure 5; sustained T_C > 100 °C risks exceeding 175 °C junction limit under full load without active cooling.

Does the insulated tab require thermal paste between the device and heatsink?

Yes - thermal interface material (TIM) is mandatory between the insulated tab and heatsink to ensure low thermal resistance. ST specifies a minimum contact pressure of 25 N and recommends silicone-based greases or phase-change pads compatible with UL94 V0 epoxy housing.

Can STPSC10H065D replace a standard silicon diode without circuit modification?

It can replace silicon diodes in most boost and freewheeling positions, but layout review is essential: lower V_F reduces conduction loss, while zero Q_rr may increase voltage stress on adjacent switches if snubbers were sized for Si recovery energy - verify peak drain-source voltage in final prototype.

Is the 2500 VRMS insulation rating tested per industry standard?

Yes - the insulation withstand voltage is verified per IEC 60747-5-2, with 100% production hipot testing at 2500 VRMS for 1 second. The 7 pF typical package capacitance is measured at 1 MHz and specified in Table 4 of DS9226 Rev 8.