STMicroelectronics STPSC10H065G2-TR

Overview

STPSC10H065G2-TR from STMicroelectronics is a 10 A, 650 V silicon carbide (SiC) Schottky power diode in D²PAK HV package, designed for high-efficiency PFC and hard-switching DC/DC converters in telecom and server power supplies. It delivers zero reverse recovery, 1.38 V typical forward voltage at 10 A and 25 °C, 5.38 mm minimum anode-to-cathode creepage, and operates up to 175 °C junction temperature.

For engineers reviewing the STPSC10H065G2-TR datasheet, STPSC10H065G2-TR pinout, STPSC10H065G2-TR application, or STPSC10H065G2-TR equivalent, key selection criteria include surge robustness (90 A IFSM), temperature-independent switching behavior, low capacitive charge (32 nC), and IEC-60664-1 creepage compliance in high-voltage isolation designs.

Technical Context

This SiC Schottky diode eliminates reverse recovery charge and associated ringing due to its majority-carrier conduction mechanism. Its dynamic performance remains stable across -40 °C to +175 °C, with junction capacitance dropping from 595 pF at 0 V to 55 pF at 400 V reverse bias.

The device leverages wide-bandgap material to sustain 650 V blocking while maintaining low VF and high dV/dt immunity. Thermal resistance is 0.85 °C/W (typ.) junction-to-case, enabling high-power-density layouts in LLC resonant and active clamp topologies where fast turn-off and low EMI are critical.

Key Specifications

Pinout & Package

Housed in D²PAK HV (TO-263HV) package with isolated tab, this 3-terminal device features anode (pin 1), cathode (pin 2), and electrically connected tab (anode). Creepage distance between anode and cathode is ≥5.38 mm with conformal coating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A-TR and UJ3D10065K3, STPSC10H065G2-TR uniquely combines D²PAK HV's 5.38 mm creepage, 0.85 °C/W thermal resistance, and ECOPACK2 compliance-making it optimal for compact, safety-certified telecom and server PFC designs.

Availability

STPSC10H065G2-TR is available at Aetrix Electronics and suitable for telecom rectifier modules, server PSU PFC stages, and EV charging station DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STPSC10H065G2-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STPSC family of SiC Schottky diodes, engineered specifically for high-efficiency, high-reliability power conversion in 600–1200 V systems where zero recovery and thermal stability are mandatory.

FAQ

Is STPSC10H065G2-TR suitable for synchronous rectification?

No - it is a unidirectional Schottky diode, not a MOSFET-based synchronous rectifier. It functions as a passive, self-commutating freewheeling or output rectification device. Its zero reverse recovery makes it ideal for replacing Si fast recovery diodes in high-frequency topologies, but it cannot be actively controlled like a gate-driven SR MOSFET.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF(AV) = 10 A at TC = 150 °C under DC conditions. For reliable long-term operation, ST recommends limiting case temperature to ≤145 °C to maintain margin on junction temperature (Tj ≤ 175 °C) and avoid accelerated parametric drift, especially under high ripple current or elevated ambient conditions.

Does the D²PAK HV package require special PCB layout considerations?

Yes - the anode-connected tab must be routed with minimum thermal resistance to heatsink. Use ≥200 mm² copper pour (70 µm thick) under the tab; maintain ≥5.38 mm clearance to any cathode-side trace or plane per IEC-60664-1. Avoid solder mask over the tab area to ensure optimal thermal transfer and electrical isolation.

How does STPSC10H065G2-TR perform under partial-load conditions?

Its VF remains low and stable down to ~0.5 A due to SiC's linear conduction characteristic. Reverse leakage stays below 425 µA at 150 °C and 650 V, minimizing standby losses. Unlike Si diodes, there is no increase in switching loss at light loads - making it highly efficient across 10–100% load range in variable-output PSUs.