Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

STMicroelectronics STPSC10H065G-TR

Name: STPSC10H065G-TR
Brand: STMicroelectronics
SKU: STPSC10H065G-TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STPSC10H065G-TR

Manufacturer:: STMicroelectronics

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STPSC10H065G-TR.pdf

Description:: DIODE SIL CARBIDE 650V 10A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:516

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STPSC10H065G-TR from STMicroelectronics is a 10 A, 650 V silicon carbide (SiC) Schottky power diode in D²PAK package, designed for high-frequency hard-switching PFC and DC-DC converters. It delivers zero reverse recovery charge, temperature-independent switching, 90 A non-repetitive surge capability, and 28.5 nC total capacitive charge at 400 V - enabling high-efficiency operation in LLC resonant and boost topologies.

For engineers reviewing the STPSC10H065G-TR datasheet, STPSC10H065G-TR pinout, STPSC10H065G-TR application, or STPSC10H065G-TR equivalent, key selection criteria include junction-to-case thermal resistance (2.1–3.5 °C/W), insulated package option (TO-220AC Ins), VF drift vs. temperature, and SiC-specific dynamic capacitance behavior under hard-switching stress.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency power conversion stages where reverse recovery losses dominate efficiency. Its wide bandgap enables a 650 V blocking rating with low forward voltage and negligible reverse recovery current - eliminating snubber circuits and reducing EMI in PFC boost stages.

The device operates up to 175 °C junction temperature and exhibits stable VF (1.56 V typ. @ 10 A, 25 °C; 1.98 V @ 150 °C) and IR (<100 µA @ 25 °C, <425 µA @ 150 °C), making it suitable for thermally constrained industrial and server PSU designs requiring long-term reliability without derating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - supports universal input AC/DC front-end designs up to 400 V DC bus with margin.
I_F(AV)	10 A - rated average forward current at T_C = 135 °C for TO-220AC/DPAK/D²PAK packages.
Q_CJ	28.5 nC @ 400 V - low capacitive charge reduces turn-off loss and dv/dt-induced ringing in hard-switched converters.
R_th(j-c)	2.1–3.5 °C/W - thermal resistance range for TO-220AC Ins package; defines heatsink sizing for 175 °C max T_j.
C_j	48 pF @ 400 V - low voltage-dependent junction capacitance minimizes displacement current during high dv/dt transitions.
I_FSM	90 A @ 10 ms sinusoidal, T_C = 25 °C - robustness against line surges and startup inrush in PFC stages.
T_j(max)	175 °C - extended thermal operating range allows higher power density and reduced heatsink mass.

Pinout & Package

D²PAK (TO-263) surface-mount package with isolated tab; 3-terminal configuration: Anode (pin 1), Cathode (pin 2), and electrically isolated metal tab (pin 3, thermal path only, not electrically connected).

Pin/Terminal	Circuit Role	Design Meaning
Anode (Pin 1)	Current entry point during forward conduction	Connected to input side of boost inductor in PFC; must handle full load current and surge transients.
Cathode (Pin 2)	Current exit point during forward conduction	Connected to switch node (e.g., MOSFET drain); low-inductance layout critical to minimize voltage overshoot.
Tab (Pin 3)	Thermal interface only	Electrically isolated copper pad; requires solder mask clearance and direct thermal pad connection to PCB ground plane or heatsink.

Key Features

Feature	Design Value
No reverse recovery charge	Eliminates reverse recovery losses and associated EMI, enabling >100 kHz PFC operation without snubbers.
Temperature-independent switching	VF and Q_CJ remain stable across –40 to +175 °C, simplifying thermal design and control loop stability.
High forward surge capability	90 A I_FSM (10 ms) ensures reliable operation during cold-start and overload conditions in server PSUs.
Insulated TO-220AC variant available	2500 V_RMS isolation and 7 pF package capacitance enable direct mounting on heatsinks without insulating washers.
ECOPACK®2 compliance	Meets RoHS and halogen-free requirements for industrial and telecom equipment with extended lifecycle support.

Applications

Server Power Supply PFC Stage

Industrial Motor Drive DC Link

Use Scenario: Boost rectifier in 3.5 kW active PFC front-end for datacenter PSUs operating at 100–250 kHz switching frequency.

IC Role / Device Role / Timing Role: Unidirectional high-voltage, high-current freewheeling diode in continuous conduction mode (CCM) boost topology.

Use Value: Zero Q_rr eliminates 3–5% conduction loss penalty versus Si FRD, improving full-load efficiency to >98.5%.

Use Scenario: Freewheeling diode across IGBTs in 15 kW variable-frequency drive DC link, handling regenerative energy during braking.

IC Role / Device Role / Timing Role: Clamp diode providing low-loss return path for inductive kickback during IGBT turn-off.

Use Value: 175 °C T_j(max) and 80 A I_FSM @ 125 °C allow compact heatsink design while surviving motor stall currents.

Telecom Rectifier Module

EV Onboard Charger (OBC) Boost Stage

Use Scenario: Output rectification in 48 V/50 A telecom rectifier with forced-air cooling and strict EMI limits.

IC Role / Device Role / Timing Role: High-frequency output diode in phase-shifted full-bridge topology operating at 200 kHz.

Use Value: 48 pF C_j at 400 V reduces displacement current by >70% vs. Si diode, lowering common-mode noise and filter size.

Use Scenario: Boost diode in 6.6 kW bidirectional OBC operating in both AC/DC and DC/AC modes with 650 V DC link.

IC Role / Device Role / Timing Role: Main energy transfer diode in interleaved dual-phase boost converter during AC charging.

Use Value: 28.5 nC Q_CJ enables soft turn-off even at 150 kHz, reducing gate driver stress and MOSFET switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10065A-TR	Same 10 A/650 V rating; 1.75 V VF max @ 10 A, 25 °C; R_th(j-c) = 2.0 °C/W (TO-247-2L)	Higher thermal performance but through-hole only; no D²PAK footprint compatibility	Select when board space allows TO-247 and maximum thermal conductivity is prioritized over SMT assembly.
SS10065S-TR	10 A/650 V; VF = 1.85 V typ. @ 10 A, 25 °C; Q_CJ = 32 nC @ 400 V; D²PAK-3L package	Slightly higher conduction and capacitive losses; lower surge rating (75 A I_FSM)	Select when cost sensitivity outweighs marginal efficiency gain and surge margin is acceptable.

Compared with C3D10065A-TR and SS10065S-TR, STPSC10H065G-TR offers optimal balance of D²PAK manufacturability, 28.5 nC Q_CJ, and 90 A surge capability - making it preferred for high-volume, high-reliability telecom and server PFC modules.

Availability

STPSC10H065G-TR is available at Aetrix Electronics and suitable for server power supply PFC stages, industrial motor drive DC links, and EV onboard charger boost circuits requiring stable component supply, long-term lifecycle assurance, and qualified SiC diode performance.

Supply support for STPSC10H065G-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, microcontrollers, and discrete devices with vertical manufacturing capabilities.

This part belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-frequency power conversion in industrial, computing, and renewable energy systems where Si limitations constrain performance.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STPSC10H065G-TR supports continuous operation with case temperature up to 135 °C for D²PAK package, as specified in its IF(AV) rating. Exceeding this requires derating per the thermal curves in DS9226 Rev 8 Figure 4, and junction temperature must remain ≤175 °C under all conditions.

Does the D²PAK package provide electrical isolation between the tab and terminals?

No - the D²PAK package has an electrically connected tab (cathode). For isolation, ST offers the TO-220AC Ins variant (STPSC10H065DI) with 2500 VRMS insulation and 7 pF typical package capacitance, verified in Table 1 of DS9226.

How does its forward voltage compare to silicon diodes at elevated temperature?

At 150 °C, VF is 1.98 V (typ.) - significantly more stable than silicon FRDs, which typically exceed 2.5 V and exhibit strong positive temperature coefficient. This stability reduces thermal runaway risk and simplifies thermal design in high-density layouts.

Can it replace a standard silicon diode without circuit redesign?

Yes, in most boost and LLC applications - but layout optimization is required: minimize cathode loop inductance, ensure adequate thermal pad area (≥4 cm² recommended), and verify gate driver immunity to reduced dv/dt-induced coupling due to absence of reverse recovery current.

STPSC10H065G-TR Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 10A

Voltage - Forward (Vf) (Max) @ If:: 1.75 V @ 10 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 100 µA @ 650 V

Capacitance @ Vr, F:: 480pF @ 0V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

Operating Temperature - Junction:: -40°C ~ 175°C

STPSC10H065G-TR FAQ

1.How can I place an order for STPSC10H065G-TR through Aetrix?

Please submit a Request for Quotation (RFQ) for STPSC10H065G-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STPSC10H065G-TR reliable?

The price and inventory of STPSC10H065G-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC10H065G-TR is usually 5 days.

3.What payment methods are accepted for STPSC10H065G-TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC10H065G-TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STPSC10H065G-TR?

STPSC10H065G-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STPSC10H065G-TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STPSC10H065G-TR?

For technical support, including STPSC10H065G-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC10H065G-TR requirements.

6.How does Aetrix verify that STPSC10H065G-TR is sourced from the original manufacturer or authorized distributors?

All STPSC10H065G-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC10H065G-TR meets industry standards.

7.What is the process for return or replacement of STPSC10H065G-TR?

All STPSC10H065G-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC10H065G-TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STPSC10H065G-TR part is unused and in its original packaging.

Return procedure for STPSC10H065G-TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…