My Inquiry
My Account
STMicroelectronics STPSC10H12B2-TR
;;2.jpg)
- Part No.:
- STPSC10H12B2-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STPSC10H12B2-TR.pdf
- Description:
- DIODE SIL CARB 1.2KV 10A DPAK HV
- Quantity:
- Payment:
- Shipping:
Inventory:4,653
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STPSC10H12B2-TR from STMicroelectronics is a 10 A, 1200 V silicon carbide (SiC) Schottky power diode in DPAK HV package, designed for high-efficiency PFC and hard-switching DC/DC stages in EV charging stations and server power supplies. It delivers zero reverse recovery, 1.35 V typical forward voltage at 10 A and 25 °C, 3 mm minimum anode-to-cathode creepage, and operates up to 175 °C junction temperature.
For engineers reviewing the STPSC10H12B2-TR datasheet, STPSC10H12B2-TR pinout, STPSC10H12B2-TR application, or STPSC10H12B2-TR equivalent, key selection criteria include reverse leakage at 150 °C, thermal resistance (Rth(j-c) = 0.65 °C/W typ.), surge robustness (IFSM = 71 A), capacitive charge (QCj = 57 nC at 800 V), and IEC-60664-1 creepage compliance.
Technical Context
This SiC Schottky diode eliminates minority-carrier storage and reverse recovery loss, enabling clean turn-off with negligible ringing under hard-switching conditions. Its wide bandgap enables stable 1200 V blocking capability while maintaining low VF and temperature-independent switching behavior.
The DPAK HV 2L package provides 3.0 mm minimum creepage between anode and cathode-critical for reinforced insulation in 1000 V+ AC-input systems-and supports conduction cooling via the exposed tab. Thermal performance is characterized by Rth(j-c) = 0.65 °C/W (typ.) and Tj rating of −40 °C to +175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Enables direct use in 1000 V AC-input PFC stages without series stacking |
| IF(AV) | 10 A - Sustains continuous conduction in 3–5 kW PFC boost stages |
| VF (typ.) | 1.35 V @ 10 A, 25 °C - Reduces conduction loss vs. Si fast recovery diodes by ~40% |
| IR (max) | 400 µA @ 1200 V, 150 °C - Ensures low standby loss in high-temp server environments |
| QCj | 57 nC @ 800 V - Limits turn-off energy and EMI in >100 kHz switching converters |
| Rth(j-c) | 0.65 °C/W (typ.) - Supports >25 W dissipation with moderate heatsinking |
| CdA-K | 3.0 mm min. - Meets IEC-60664-1 reinforced insulation for 1200 V systems |
Pinout & Package
Housed in DPAK HV 2L (TO-252-2HV) package with isolated anode/cathode terminals and thermally enhanced copper tab. Creepage distance ≥3.0 mm between anode and cathode satisfies IEC-60664-1 for 1200 V working voltage.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Tab) | High-side current entry point | Exposed metal tab serves as anode and primary thermal path; requires insulated mounting in high-voltage layouts |
| Cathode (Lead) | Low-side current exit point | Single Gull-wing lead carries full forward current; PCB trace must handle 10 A RMS and transient surges |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates switching loss and EMI spikes during diode turn-off in PFC and LLC resonant converters |
| Temperature-stable VF | VF increases only ~0.4 V from 25 °C to 150 °C - maintains efficiency across full operating range |
| High surge capability | 71 A non-repetitive surge (10 ms, 25 °C) - withstands inrush and fault currents in EV chargers |
| ECOPACK2 compliance | Meets RoHS, halogen-free, and material declaration requirements for industrial and automotive supply chains |
| Robust high-voltage periphery | Field-plate optimized edge termination ensures stable 1200 V blocking without premature avalanche |
Applications
| EV Charging Station | Server Power Supply |
|---|---|
Use Scenario: 11–22 kW on-board or off-board AC/DC converter with active PFC stage. IC Role / Device Role / Timing Role: Output rectifier in boost PFC and secondary-side synchronous rectification in isolated DC/DC. Use Value: Zero recovery loss improves efficiency >98% at full load; 175 °C rating enables compact heatsink design in confined enclosures. | Use Scenario: High-density 48 V intermediate bus converter in cloud data center PSU. IC Role / Device Role / Timing Role: Freewheeling diode in phase-shifted full-bridge or output rectifier in LLC resonant topology. Use Value: Low QCj and stable Cj reduce switching node oscillation; 3 mm creepage simplifies isolation barrier layout per IEC 62368-1. |
| PFC Front-End Module | Industrial DC/DC Converter |
Use Scenario: Universal input (85–265 VAC) 3.3 kW telecom rectifier with continuous conduction mode (CCM) boost PFC. IC Role / Device Role / Timing Role: Boost diode handling 10 A average current at >100 kHz switching frequency. Use Value: 1.35 V VF minimizes conduction loss; negligible reverse recovery avoids snubber complexity and MOSFET stress. | Use Scenario: 1200 V DC input to 48 V/24 V isolated converter for renewable energy inverters or rail traction systems. IC Role / Device Role / Timing Role: Input-side clamping or freewheeling diode in dual-active-bridge or phase-shifted ZVS topologies. Use Value: 150 °C IR < 400 µA ensures low standby loss; Rth(j-c) = 0.65 °C/W enables direct mounting to cold plate without thermal interface pads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10120A | Same 10 A/1200 V rating; TO-220AC package; higher VF (1.55 V typ.) and Rth(j-c) (1.2 °C/W) | Limited to lower-power PFC or discrete heatsink mounting; no creepage advantage | Prefer when TO-220 footprint is fixed and thermal margin exists |
| SS12120 | 12 A/1200 V; D2PAK package; VF = 1.45 V; CdA-K = 2.5 mm (IEC-60664-1 Class II only) | Requires additional creepage spacing on PCB for 1200 V systems | Choose for higher current headroom where board-level insulation can be controlled |
Compared with C3D10120A and SS12120, STPSC10H12B2-TR offers superior thermal performance (0.65 °C/W), tighter creepage (3.0 mm), and lowest VF (1.35 V), making it optimal for space-constrained, high-efficiency PFC designs requiring reinforced insulation.
Availability
STPSC10H12B2-TR is available at Aetrix Electronics and suitable for EV charging station power modules, server front-end PFC circuits, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and IEC-60664-1 compliant creepage.
Supply support for STPSC10H12B2-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's STPSC family of high-voltage SiC Schottky diodes, engineered specifically for high-frequency, high-efficiency power conversion in EV infrastructure, data centers, and renewable energy systems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The STPSC10H12B2-TR supports continuous operation with case temperature (Tc) up to 155 °C when delivering 10 A average forward current, as specified in the absolute ratings table. At Tc = 155 °C, the device maintains full 1200 V blocking capability and remains within its 175 °C maximum junction temperature limit assuming proper heatsinking and Rth(j-c) ≤ 0.9 °C/W.
Does this diode require a gate driver or external control signal?
No - the STPSC10H12B2-TR is a passive two-terminal power diode with no gate or control terminal. It operates solely based on forward bias polarity and does not require any drive circuitry, unlike SiC MOSFETs or IGBTs. Its Schottky structure enables self-commutated unidirectional conduction without timing or logic signals.
Can it replace a silicon fast recovery diode in an existing PFC design?
Yes - it is a direct drop-in replacement for 1200 V Si FRDs in most PFC boost stages, provided PCB creepage and thermal layout accommodate the DPAK HV 2L footprint and 3.0 mm anode–cathode spacing. Benefits include immediate reduction in switching loss, elimination of snubbers, and improved efficiency above 50 kHz, but layout review for high dv/dt immunity is recommended.
Is the DPAK HV 2L package lead-free and RoHS-compliant?
Yes - the STPSC10H12B2-TR is manufactured in ECOPACK2-compliant packaging, which meets RoHS Directive 2011/65/EU, is halogen-free, and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The epoxy mold compound is UL 94 V0 rated, and full material declarations are available through ST's product environmental page.
STPSC10H12B2-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®2
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 60 µA @ 1200 V
- Capacitance @ Vr, F:
- 725pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK HV
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC10H12B2-TR FAQ
1.How can I place an order for STPSC10H12B2-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC10H12B2-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC10H12B2-TR reliable?
The price and inventory of STPSC10H12B2-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC10H12B2-TR is usually 5 days.
3.What payment methods are accepted for STPSC10H12B2-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC10H12B2-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC10H12B2-TR?
STPSC10H12B2-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC10H12B2-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC10H12B2-TR?
For technical support, including STPSC10H12B2-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC10H12B2-TR requirements.
6.How does Aetrix verify that STPSC10H12B2-TR is sourced from the original manufacturer or authorized distributors?
All STPSC10H12B2-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC10H12B2-TR meets industry standards.
7.What is the process for return or replacement of STPSC10H12B2-TR?
All STPSC10H12B2-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC10H12B2-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC10H12B2-TR part is unused and in its original packaging.
Return procedure for STPSC10H12B2-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STPSC10H12B2-TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
