STMicroelectronics STPSC10H12CWL

Overview

STPSC10H12CWL from STMicroelectronics is a 1200 V, 10 A dual-die silicon carbide Schottky power diode in TO-247 long-lead package, designed for high-efficiency PFC and secondary-side rectification in hard-switching converters. It delivers 1.35 V typical forward voltage at 5 A, operates up to 175 °C junction temperature, and exhibits negligible reverse recovery and temperature-independent switching behavior.

For engineers reviewing the STPSC10H12CWL datasheet, STPSC10H12CWL pinout, STPSC10H12CWL application, or STPSC10H12CWL equivalent, key selection criteria include its 1200 V blocking capability, dual-diode configuration (10 A total), low thermal resistance (0.5 °C/W max per device), and robust surge rating (35 A non-repetitive, 10 ms).

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC JBS devices in high-voltage, high-frequency power conversion stages. Its zero reverse recovery charge (Qcj = 36 nC at 800 V) eliminates turn-off ringing and reduces EMI, while its wide bandgap enables stable VF and IR performance across -40 °C to +175 °C.

The dual-die structure integrates two independent 5 A/1200 V diodes in one TO-247 LL package with common cathode connection (pin configuration confirmed via ST packaging drawing DocID030345 Rev 1, Fig. 8). Thermal resistance is specified as 0.5–0.7 °C/W (junction-to-case, per device), enabling high-power density designs without forced air cooling.

Key Specifications

Pinout & Package

STPSC10H12CWL uses the TO-247 long-lead (LL) package with three terminals: anode 1 (A1), anode 2 (A2), and common cathode (K). The package features insulated leads, UL94 V0 epoxy, and is optimized for conduction cooling with recommended mounting torque of 0.9–1.2 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D10065A and SS12120, STPSC10H12CWL uniquely combines 1200 V rating, dual-diode integration, and 0.5 °C/W thermal resistance-enabling compact, high-efficiency designs in >800 V DC systems where voltage margin and thermal headroom are critical.

Availability

STPSC10H12CWL is available at Aetrix Electronics and suitable for industrial PFC rectifiers, server PSU secondary-side designs, solar inverter DC links, and EV onboard chargers requiring stable component supply and long-lifecycle support.

Supply support for STPSC10H12CWL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

ST's SiC Power Diode product line targets high-efficiency, high-reliability power conversion in renewable energy, EV infrastructure, and datacenter power supplies-leveraging proprietary 1200 V SiC epitaxy and ruggedized TO-247 packaging.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STPSC10H12CWL supports continuous operation up to 160 °C case temperature, as validated by its IF(AV) = 10 A rating at TC = 160 °C (DC current, per device). Exceeding this temperature requires derating per Figure 3 in the datasheet, with safe operation limited to 175 °C junction temperature.

Is STPSC10H12CWL pin-compatible with standard TO-247-3L packages?

Yes-STPSC10H12CWL uses the TO-247 long-lead (LL) variant with identical mechanical outline (DocID030345 Rev 1, Fig. 8) and terminal spacing as industry-standard TO-247-3L. Mounting hole centers, lead pitch, and screw torque specification (0.9–1.2 N·m) match JEDEC TO-247 standards.

How does the dual-diode configuration affect thermal performance?

The dual-die structure shares a common copper baseplate and cathode terminal, resulting in a lower composite Rth(j-c) of 0.5 °C/W (typ.) versus 1.0 °C/W for a single die. This enables simultaneous 5 A conduction per diode with <50 °C total junction-to-case rise, improving power density over two discrete devices.

Can STPSC10H12CWL be used in avalanche conditions?

No-this is a unidirectional Schottky diode with no rated avalanche energy. Its 1200 V VRRM is a repetitive blocking rating only. Operation beyond VRRM risks irreversible breakdown; external clamping or proper voltage derating (≥20%) is mandatory in circuits with voltage overshoot.