My Inquiry
My Account
STMicroelectronics STPSC10H12G-TR
- Part No.:
- STPSC10H12G-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STPSC10H12G-TR.pdf
- Description:
- DIODE SIL CARB 1.2KV 10A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,955
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STPSC10H12G-TR from STMicroelectronics is a 1200 V, 10 A silicon carbide Schottky power rectifier in D²PAK package, featuring negligible reverse recovery, 1.35 V typical forward voltage at 10 A and -40 °C to +175 °C operating junction temperature. It is designed for high-efficiency PFC stages and secondary-side rectification in industrial SMPS and solar inverters.
For engineers reviewing the STPSC10H12G-TR datasheet, STPSC10H12G-TR pinout, STPSC10H12G-TR application, or STPSC10H12G-TR equivalent, key selection criteria include its zero-recovery switching behavior, temperature-independent capacitive turn-off, low thermal resistance (0.65 °C/W typ.), and ECOPACK®2 compliance for high-reliability power conversion designs.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery and ultrafast diodes in hard-switching topologies. Its wide band-gap material enables stable 1200 V blocking with low VF and near-zero Qrr - eliminating reverse recovery losses and associated EMI.
The device exhibits minimal variation in VF (1.35 V @ 25 °C → 1.75 V @ 150 °C) and IR (60 µA @ 25 °C → 30–400 µA @ 150 °C), ensuring predictable conduction and leakage across full temperature range. Junction-to-case thermal resistance is 0.65 °C/W (typ.) in D²PAK, supporting high-power density layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Enables direct use in 800 V DC-link systems with 50 % safety margin against transients. |
| IF(AV) | 10 A - Rated average forward current at TC = 155 °C, defining continuous conduction capability in thermally managed designs. |
| VF (typ) | 1.35 V @ IF = 10 A, Tj = 25 °C - Low conduction loss reduces power dissipation by ~30 % vs. comparable Si FRD. |
| Tj (max) | +175 °C - Supports operation in high-ambient environments without derating, e.g., enclosed industrial enclosures. |
| Rth(j-c) | 0.65 °C/W (typ.) - Enables efficient heat transfer to heatsink; allows >15 W dissipation with ≤10 °C rise at case. |
| Qcj | 57 nC @ VR = 800 V - Low capacitive charge minimizes switching loss during hard-commutation events. |
| IR (max) | 400 µA @ Tj = 150 °C, VR = VRRM - Low leakage preserves efficiency in high-voltage standby and light-load conditions. |
Pinout & Package
STPSC10H12G-TR is housed in a surface-mount D²PAK (TO-263) package with two terminals: anode and cathode. The tab is electrically connected to the cathode and serves as the primary thermal path. Mounting requires solder reflow per JEDEC J-STD-020 profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (lead 1) | Input current terminal | Connects to AC/switching node side; carries full forward current into device. |
| Cathode (tab + lead 2) | Output current terminal & thermal interface | Electrically and thermally ties to output rail; must be soldered to ≥6.85 mm × 7.25 mm copper area for rated Rth(j-c). |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr ≈ 0) | Eliminates turn-off switching loss and associated voltage overshoot/ringing in boost PFC and LLC resonant converters. |
| Temperature-stable VF & Cj | Forward voltage increases only ~0.4 V from 25 °C to 150 °C; capacitance varies <20 % over full VR range - simplifies thermal design. |
| High surge robustness | IFSM = 60 A @ TC = 150 °C (10 ms sine) - withstands inrush and fault currents without degradation in motor drives and UPS systems. |
| ECOPACK®2 compliance | Meets RoHS, halogen-free, and lead-free requirements - supports global environmental compliance without performance trade-offs. |
| Wide operating temperature | Rated from -40 °C to +175 °C - enables deployment in under-hood automotive auxiliary supplies and industrial outdoor power systems. |
Applications
| Industrial SMPS PFC Stage | Solar Inverter DC-Link Clamp |
|---|---|
|
Use Scenario: Boost PFC stage in 3–5 kW telecom rectifiers operating at 100 kHz with 800 V DC bus. IC Role / Device Role / Timing Role: High-voltage output rectifier replacing Si FRD to eliminate reverse recovery loss and reduce heatsink size. Use Value: Reduces conduction + switching losses by 2.1 W per diode vs. Si FRD, enabling 98.2 % PFC efficiency at full load. |
Use Scenario: DC-link clamp diode in 10 kW string inverters exposed to rapid irradiance transients and grid faults. IC Role / Device Role / Timing Role: Bidirectional clamping element absorbing inductive kickback during IGBT turn-off. Use Value: Withstands 60 A surge at 150 °C case temperature without parameter shift, improving system MTBF by 3× vs. Si alternative. |
| EV Onboard Charger (OBC) Secondary Rectifier | High-Voltage Industrial Motor Drive Freewheeling |
|
Use Scenario: Output rectification in dual-phase LLC resonant converter of 6.6 kW OBC, operating up to 175 °C ambient. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous rectification topology. Use Value: Maintains 1.75 V VF at 150 °C, enabling 12 K/W thermal design margin where Si diodes exceed safe SOA limits. |
Use Scenario: Freewheeling path in 7.5 kW VFD output stage driving induction motors with regenerative braking. IC Role / Device Role / Timing Role: Passive freewheeling diode across IGBT collector-emitter during inductive energy recirculation. Use Value: Zero Qrr prevents voltage spikes >1400 V during 10 µs current reversal, eliminating need for snubbers and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10120A-TR | Same 1200 V/10 A rating; TO-220-2L package; Rth(j-c) = 1.0 °C/W (higher than ST's 0.65 °C/W); VF = 1.5 V @ 10 A. | Requires larger heatsink area due to higher thermal resistance; less suitable for space-constrained D²PAK layouts. | Select when TO-220 mounting is preferred and board-level thermal management permits higher Rth. |
| SS12120A-TR | 1200 V/10 A; D²PAK package; VF = 1.45 V @ 10 A; Tj(max) = +175 °C; Rth(j-c) = 0.75 °C/W. | Marginally higher VF and thermal resistance reduce efficiency by ~0.3 % and require 15 % more copper area. | Consider for cost-sensitive programs where 0.1 V VF penalty and 0.1 °C/W Rth increase are acceptable. |
Compared with C3D10120A-TR and SS12120A-TR, STPSC10H12G-TR delivers the lowest VF (1.35 V) and best thermal performance (0.65 °C/W) in D²PAK, making it optimal for high-density, high-efficiency 1200 V rectification where thermal headroom and conduction loss are critical.
Availability
STPSC10H12G-TR is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, EV onboard chargers, and high-voltage motor drives requiring stable component supply and long-term lifecycle assurance.
Supply support for STPSC10H12G-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.
This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-reliability power conversion in 650 V–1700 V systems where zero-recovery behavior and thermal resilience are mandatory.
FAQ
What is the maximum recommended PCB copper area for thermal performance in D²PAK layout?
The datasheet specifies a minimum copper area of 6.85 mm × 7.25 mm (≈50 mm²) under the cathode tab to achieve the rated 0.65 °C/W junction-to-case thermal resistance. Using ≥105 mm² (e.g., 10.5 mm × 10 mm) with 2 oz copper improves Rth(j-a) to ~35 °C/W on FR4, enabling higher continuous current in convection-cooled designs.
Does STPSC10H12G-TR require gate drive or external control circuitry?
No - it is a passive two-terminal Schottky rectifier with no gate or control input. It operates solely based on forward bias polarity and current magnitude. Unlike MOSFET-based synchronous rectifiers, it needs no timing signals, drivers, or dead-time management, simplifying layout and reducing system component count.
Can this diode replace a 1200 V Si fast recovery diode in an existing design without layout changes?
Yes, if the original design uses a D²PAK footprint and thermal pad layout matching ST's mechanical drawing (Table 8). Electrical replacement is drop-in: same pinout, polarity, and voltage rating. However, reduced switching loss may lower MOSFET/IGBT stress - verify gate driver slew rate and snubber values are still appropriate given eliminated reverse recovery ringing.
Is STPSC10H12G-TR qualified for automotive applications per AEC-Q101?
No - STPSC10H12G-TR is not AEC-Q101 qualified. It is rated for industrial temperature range (-40 °C to +175 °C) and intended for industrial, solar, and EV charging applications. For automotive under-hood use, ST offers the AEC-Q101-qualified STPSC10H12GY-TR variant with identical electrical specs but additional qualification testing.
STPSC10H12G-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 60 µA @ 1200 V
- Capacitance @ Vr, F:
- 725pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC10H12G-TR FAQ
1.How can I place an order for STPSC10H12G-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC10H12G-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC10H12G-TR reliable?
The price and inventory of STPSC10H12G-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC10H12G-TR is usually 5 days.
3.What payment methods are accepted for STPSC10H12G-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC10H12G-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC10H12G-TR?
STPSC10H12G-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC10H12G-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC10H12G-TR?
For technical support, including STPSC10H12G-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC10H12G-TR requirements.
6.How does Aetrix verify that STPSC10H12G-TR is sourced from the original manufacturer or authorized distributors?
All STPSC10H12G-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC10H12G-TR meets industry standards.
7.What is the process for return or replacement of STPSC10H12G-TR?
All STPSC10H12G-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC10H12G-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC10H12G-TR part is unused and in its original packaging.
Return procedure for STPSC10H12G-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STPSC10H12G-TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
