STMicroelectronics STPSC10TH13TI

Overview

STPSC10TH13TI from STMicroelectronics is a dual 650 V silicon carbide Schottky diode in insulated TO-220AB package, designed for high-efficiency bridge-less PFC and hard-switching rectification. It delivers 10 A average forward current per diode, exhibits negligible reverse recovery, operates up to 175 °C junction temperature, and features 480 pF junction capacitance at 0 V with 2500 V_rms insulation rating - deployed in industrial AC-DC front-ends.

For engineers reviewing the STPSC10TH13TI datasheet, STPSC10TH13TI pinout, STPSC10TH13TI application, or STPSC10TH13TI equivalent, key selection criteria include its zero-recovery behavior, temperature-independent switching, 90 A non-repetitive surge capability, insulated thermal path, and suitability for high-frequency, high-voltage rectification where EMI reduction and conduction loss minimization are critical.

Technical Context

This dual SiC Schottky diode integrates two independent 650 V/10 A diodes in a single insulated TO-220AB housing, enabling shared heatsinking while maintaining galvanic isolation between circuit ground and heatsink. Its wide-bandgap silicon carbide construction eliminates minority-carrier storage, resulting in no reverse recovery charge (Q_rr ≈ 0) and minimal voltage ringing during turn-off.

The device supports hard-switching topologies with stable dynamic performance across –40 °C to +175 °C junction range; thermal resistance is 3.1 °C/W (typ.) junction-to-case per diode, and total thermal resistance (junction-to-heatsink via case) is 1.8 °C/W (typ.) when both diodes conduct simultaneously.

Key Specifications

Pinout & Package

STPSC10TH13TI uses an insulated TO-220AB package with electrically isolated metal tab (2500 V_rms isolation), epoxy meeting UL94 V0, and lead-free construction. Mounting torque: 0.4–0.6 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D10065I and SS10H65, STPSC10TH13TI uniquely combines dual-diode integration, 2500 V_rms insulation, and TO-220AB form factor-enabling simplified, space-constrained, and safety-compliant designs without external isolation components.

Availability

STPSC10TH13TI is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, bridge-less PFC circuits, and solar inverter DC-link rectification requiring stable component supply and long-lifecycle support.

Supply support for STPSC10TH13TI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-frequency power conversion in demanding industrial and renewable energy applications.

FAQ

Is STPSC10TH13TI suitable for synchronous rectification?

No - it is a passive Schottky diode, not a controlled switch. Synchronous rectification requires actively gated MOSFETs. STPSC10TH13TI serves as a high-performance freewheeling or rectifying element in topologies like totem-pole PFC or boost converters where zero-recovery behavior improves efficiency and EMI.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies I_F(AV) = 10 A at T_c = 70 °C. For continuous operation, case temperature must not exceed 125 °C to maintain safe junction temperature below 175 °C, assuming worst-case R_th(j-c) = 4.1 °C/W and power dissipation ≤ 12.2 W per diode.

Does the insulated tab require thermal compound when mounted to a heatsink?

Yes - thermal interface material (TIM) is required between the insulated metal tab and heatsink to ensure low thermal resistance. The insulation layer is internal (epoxy-based); external TIM fills microscopic air gaps and enhances conduction, maintaining the specified R_th(j-c) performance.

Can both diodes be used in parallel for higher current capacity?

No - the device is not characterized for parallel operation. Each diode has independent thermal and electrical characteristics; paralleling without individual current-sharing design (e.g., ballasting resistors, matched layout) risks thermal runaway due to V_F mismatch and unequal R_th paths.