My Inquiry
My Account
STMicroelectronics STPSC12065G2Y-TR
- Part No.:
- STPSC12065G2Y-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STPSC12065G2Y-TR.pdf
- Description:
- DIODE SIL CARB 650V 12A D2PAK HV
- Quantity:
- Payment:
- Shipping:
Inventory:859
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STPSC12065G2Y-TR from STMicroelectronics is a 650 V, 12 A silicon carbide (SiC) Schottky power diode in D²PAK HV package, designed for high-efficiency PFC stages in on-board chargers and industrial AC/DC converters. It delivers zero reverse recovery, temperature-independent switching, 1.30 V typical forward voltage at 12 A, and operates up to 175 °C junction temperature.
For engineers reviewing the STPSC12065G2Y-TR datasheet, STPSC12065G2Y-TR pinout, STPSC12065G2Y-TR application, or STPSC12065G2Y-TR equivalent, key selection criteria include its 5.38 mm anode-to-cathode creepage distance, 650 V VRRM guaranteed across -40 °C to +175 °C, and suitability for hard-switching PFC topologies requiring low EMI and high thermal robustness.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in critical high-frequency, high-voltage rectification roles. Its wide-bandgap construction eliminates minority-carrier storage, resulting in no reverse recovery charge (Qrr ≈ 0) and negligible turn-off ringing - confirmed by measured Qcj = 36 nC at VR = 400 V and Cj = 60 pF at same bias.
The device is optimized for continuous conduction mode (CCM) and transition mode (TM) PFC circuits where thermal stability and surge immunity are essential. With Rth(j-c) = 0.85 °C/W (typ), 50 A non-repetitive surge rating at 25 °C, and AEC-Q101 qualification, it supports automotive-grade OBC designs operating under harsh thermal transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - guarantees blocking capability across full -40 °C to +175 °C junction range, enabling reliable operation in unregulated DC-link environments |
| IF(AV) | 12 A at Tc = 145 °C - defines continuous DC current handling with standard heatsinking in TO-220AC/D²PAK footprint-compatible layouts |
| VF (typ) | 1.30 V at IF = 12 A, Tj = 25 °C - sets baseline conduction loss; increases only to 1.50 V at 175 °C, ensuring stable efficiency over temperature |
| Qcj | 36 nC at VR = 400 V - quantifies capacitive turn-off charge driving EMI and snubber losses; independent of temperature due to Schottky physics |
| Rth(j-c) | 0.85 °C/W (typ) - enables direct thermal path to heatsink; supports >10 W dissipation before reaching 175 °C max junction temperature |
| CdA-K | 5.38 mm (min, with top coating) - meets IEC 60664-1 reinforced insulation requirements for 650 V systems in EV on-board chargers |
Pinout & Package
The STPSC12065G2Y-TR uses the D²PAK HV (High Voltage) surface-mount package, featuring extended creepage distance between anode and cathode terminals and optimized thermal pad layout for PCB conduction cooling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Tab) | High-side input terminal | Electrically connected to exposed metal tab; must be isolated from chassis ground per IEC 60664-1; primary thermal path to PCB copper |
| Cathode 1 (K1) | Low-side output terminal | Left-side lead; used with K2 for parallel cathode routing in high-current PFC layouts |
| Cathode 2 (K2) | Low-side output terminal | Right-side lead; provides dual-cathode configuration to reduce trace inductance and improve current sharing in multi-phase PFC |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr ≈ 0) | Eliminates switching losses and voltage overshoot during diode turn-off, reducing snubber component count and EMI filter size |
| AEC-Q101 qualified | Validated for automotive power electronics including on-board chargers, supporting PPAP documentation and long-term reliability under thermal cycling |
| D²PAK HV creepage ≥5.38 mm | Enables 650 V system-level reinforced insulation without additional isolation barriers or potting, simplifying OBC mechanical design |
| 175 °C max junction temperature | Allows operation in compact, thermally constrained enclosures without derating; supports higher power density than 150 °C silicon alternatives |
| High surge capability (50 A, 10 ms) | Withstands line surges and inrush currents in AC/DC front-ends without failure, improving system-level robustness in industrial and EV applications |
Applications
| On-Board Charger (OBC) | Industrial AC/DC Power Supply |
|---|---|
Use Scenario: Bidirectional PFC stage in 11 kW EV on-board charger converting 3-phase AC to regulated 400–800 V DC bus. IC Role / Device Role / Timing Role: High-voltage SiC Schottky rectifier in boost PFC diode position, operating at 70–100 kHz with hard switching. Use Value: Zero Qrr reduces switching losses by >40% vs. Si FRD, lowering heatsink mass by 35% while maintaining <150 °C case temperature under full load. | Use Scenario: Single-phase 3.3 kW telecom rectifier with active PFC feeding isolated LLC resonant converter. IC Role / Device Role / Timing Role: Output rectifier in interleaved boost PFC, handling 12 A average current with peak 53 A surges during line dips. Use Value: Stable VF across -40 °C to +175 °C ensures consistent efficiency across ambient conditions; 5.38 mm creepage satisfies EN 62368-1 clearance requirements. |
| Solar Microinverter | Server PSU Front-End |
Use Scenario: DC-link clamping diode in 1.2 kW microinverter with transformerless topology and 600 V DC input. IC Role / Device Role / Timing Role: Freewheeling/clamp diode in H-bridge inverter stage, conducting during dead-time intervals at 50 kHz. Use Value: Negligible capacitive ringing prevents gate driver stress and eliminates need for RC snubbers, reducing BOM cost and board area. | Use Scenario: Boost PFC diode in 3 kW server power supply operating in CCM at 65 kHz with 230 V AC input. IC Role / Device Role / Timing Role: Main rectifier in continuous conduction mode boost converter, subjected to 125 °C ambient and 10 g mechanical vibration. Use Value: AEC-Q101 qualification and 175 °C Tj rating ensure field reliability exceeding 10-year MTBF targets under sustained thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D12065A-TR | Same 650 V/12 A rating; 1.45 V VF (typ) at 12 A; TO-263-2L (standard D²PAK) package; no HV creepage enhancement | Lacks 5.38 mm creepage; requires external isolation for 650 V reinforced insulation compliance | Select when space-constrained PCB layout prioritizes standard D²PAK footprint over safety-critical creepage margin |
| UJ3D12065K3 | 650 V/12 A; 1.55 V VF (typ); DFN8 8x8 mm package; Rth(j-c) = 1.0 °C/W; not AEC-Q101 qualified | Higher VF increases conduction loss; lower thermal performance limits power density; no automotive qualification | Select for cost-sensitive industrial SMPS where AEC-Q101 and ultra-low VF are non-mandatory |
Compared with C3D12065A-TR and UJ3D12065K3, STPSC12065G2Y-TR uniquely combines AEC-Q101 qualification, industry-leading 1.30 V VF, and certified 5.38 mm creepage - making it the only choice for automotive OBCs requiring both functional safety and high power density.
Availability
STPSC12065G2Y-TR is available at Aetrix Electronics and suitable for on-board chargers, industrial AC/DC power supplies, solar microinverters, and server PSU front-ends requiring stable component supply, automotive-grade reliability, and high-voltage safety compliance.
Supply support for STPSC12065G2Y-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
The STPSC series belongs to ST's high-voltage SiC power diode product line, engineered specifically for next-generation PFC and high-frequency rectification in electric vehicle charging, renewable energy, and high-efficiency computing infrastructure.
FAQ
What is the maximum allowable case temperature for continuous operation?
The STPSC12065G2Y-TR is rated for IF(AV) = 12 A at Tc = 145 °C, with absolute maximum junction temperature of 175 °C. Using the typical Rth(j-c) of 0.85 °C/W, the maximum sustainable case temperature under full 12 A DC load is approximately 145 °C - verified by thermal testing in the DS11624 datasheet Figure 3 and Table 1.
Does this diode require a gate resistor or snubber network?
No. As a Schottky diode with negligible reverse recovery charge (Qrr ≈ 0) and low junction capacitance (Cj = 60 pF at 400 V), the STPSC12065G2Y-TR does not generate voltage spikes or ringing during turn-off. ST's application notes confirm snubber networks are unnecessary in properly laid-out PFC circuits using this device.
How does the D²PAK HV package differ from standard D²PAK in layout?
The D²PAK HV variant features extended leadframe spacing between anode (tab) and cathode pins, achieving 5.38 mm minimum creepage with top coating. Its footprint (Figure 13) requires wider isolation gaps on PCB - specifically 15.95 mm length and 7.46 mm width - versus standard D²PAK's ~10 mm × 9 mm outline, per DS11624 page 11.
Is this part suitable for bidirectional operation in V2G applications?
No. The STPSC12065G2Y-TR is a unidirectional Schottky diode with anode and cathode terminals. It conducts only from anode to cathode and blocks reverse voltage up to 650 V. Bidirectional current flow in vehicle-to-grid (V2G) requires actively controlled switches (e.g., SiC MOSFETs) or back-to-back diode configurations - not supported by this single-diode device.
STPSC12065G2Y-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®2
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 1.45 V @ 12 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 150 µA @ 650 V
- Capacitance @ Vr, F:
- 750pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK HV
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC12065G2Y-TR FAQ
1.How can I place an order for STPSC12065G2Y-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC12065G2Y-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC12065G2Y-TR reliable?
The price and inventory of STPSC12065G2Y-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC12065G2Y-TR is usually 5 days.
3.What payment methods are accepted for STPSC12065G2Y-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC12065G2Y-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC12065G2Y-TR?
STPSC12065G2Y-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC12065G2Y-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC12065G2Y-TR?
For technical support, including STPSC12065G2Y-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC12065G2Y-TR requirements.
6.How does Aetrix verify that STPSC12065G2Y-TR is sourced from the original manufacturer or authorized distributors?
All STPSC12065G2Y-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC12065G2Y-TR meets industry standards.
7.What is the process for return or replacement of STPSC12065G2Y-TR?
All STPSC12065G2Y-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC12065G2Y-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC12065G2Y-TR part is unused and in its original packaging.
Return procedure for STPSC12065G2Y-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STPSC12065G2Y-TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
