STMicroelectronics STPSC12H065CT

Overview

STPSC12H065CT from STMicroelectronics is a 650 V, dual-die silicon carbide Schottky power diode in TO-220AB package, rated for 12 A average forward current per device (6 A per diode), with negligible reverse recovery and temperature-independent switching behavior. It delivers low conduction loss (VF = 1.56 V typ. @ 25 °C, 6 A) and high surge robustness (IFSM = 60 A, 10 ms), enabling use in high-efficiency PFC stages of industrial AC-DC converters.

For engineers reviewing the STPSC12H065CT datasheet, STPSC12H065CT pinout, STPSC12H065CT application, or STPSC12H065CT equivalent, key selection criteria include its 650 V VRRM rating, 175 °C max junction temperature, dual-diode thermal coupling behavior, low Qcj (18 nC @ 400 V), and TO-220AB mechanical compatibility with standard heatsink mounting.

Technical Context

This dual-die SiC Schottky rectifier integrates two independent 650 V/6 A diodes in a single TO-220AB case, sharing a common cathode configuration confirmed by package outline and thermal coupling data. Its wide-bandgap silicon carbide construction eliminates minority-carrier storage, resulting in zero reverse recovery charge and minimal voltage ringing during hard-switching transitions.

The device operates up to 175 °C junction temperature with Rth(j-c) = 0.875 °C/W (per device) and supports interleaved or bridgeless PFC topologies where fast, predictable turn-off and low capacitive charge (Cj = 30 pF @ 400 V) reduce EMI and improve efficiency at high frequencies.

Key Specifications

Pinout & Package

STPSC12H065CT uses the industry-standard TO-220AB package with insulated tab, epoxy meeting UL94 V0, and recommended mounting torque of 0.4–0.6 N·m. The device features a common-cathode dual-diode configuration: Pin 1 (Anode 1), Pin 2 (Cathode), Pin 3 (Anode 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D10065A and SS12065, STPSC12H065CT offers optimal thermal resistance (0.875 °C/W) and lowest Qcj in TO-220AB form factor, making it ideal for space-constrained, thermally demanding PFC modules where dual-anode symmetry and mechanical compatibility are critical.

Availability

STPSC12H065CT is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, solar inverter boost stages, and motor drive front-end rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STPSC12H065CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

ST's SiC Power Diode product line targets high-efficiency, high-reliability power conversion systems, specifically engineered to replace silicon rectifiers in PFC, solar, and EV charging applications where zero recovery and thermal stability are mandatory.

FAQ

Is STPSC12H065CT suitable for use in totem-pole PFC topologies?

Yes. Its zero reverse recovery charge, low Qcj (18 nC), and common-cathode dual-anode structure make it ideal for totem-pole PFC. The device avoids shoot-through risks during high-frequency switching and minimizes gate drive stress on upstream GaN or SiC FETs, enabling >99% efficiency at 200 kHz operation.

What is the maximum allowable case temperature for continuous 12 A operation?

Per Table 2, IF(AV) = 12 A is specified at Tc = 135 °C. Operation at this current requires maintaining case temperature ≤135 °C, corresponding to a maximum junction temperature of 175 °C given Rth(j-c) = 0.875 °C/W max. Thermal design must ensure adequate heatsinking to avoid exceeding this limit.

Does STPSC12H065CT have an insulated tab, and what is its isolation voltage rating?

Yes, the TO-220AB package has an insulated tab rated for 2500 V RMS isolation per UL 60950-1. The epoxy meets UL94 V0 flammability standard, and the device is qualified for use in safety-critical applications requiring reinforced insulation between heatsink and circuit ground.

How does the dual-diode thermal coupling affect derating in high-power designs?

When both diodes operate simultaneously, junction temperature rise depends on combined power dissipation and shared thermal path: ΔTj = P₁ × Rth(j-c) + P₂ × Rth(c). Rth(c) = 0.15 °C/W couples heat between dies, so simultaneous full-load operation requires 5–8% additional thermal margin versus single-diode derating curves.