My Inquiry
My Account
STMicroelectronics STPSC15H12G2-TR
- Part No.:
- STPSC15H12G2-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STPSC15H12G2-TR.pdf
- Description:
- DIODE SIL CARB 1.2KV 15A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,943
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STPSC15H12G2-TR from STMicroelectronics is a 15 A, 1200 V silicon carbide (SiC) Schottky power diode in D²PAK HV package, designed for high-efficiency PFC, EV charging stations, and DC/DC converters. It delivers zero reverse recovery, temperature-independent switching, 1.35 V typical forward voltage at 15 A and 25 °C, 5.38 mm minimum anode-to-cathode creepage, and operation up to 175 °C junction temperature.
For engineers reviewing the STPSC15H12G2-TR datasheet, STPSC15H12G2-TR pinout, STPSC15H12G2-TR application in PFC or EV charging, or STPSC15H12G2-TR equivalent SiC diodes, this page provides verified electrical parameters, thermal resistance (Rth(j-c) = 0.45 °C/W typ.), surge capability (IFSM = 105 A), capacitive charge (Qcj = 94 nC at 800 V), and creepage-compliant packaging per IEC 60664-1.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in hard-switching topologies by eliminating reverse recovery charge (Qrr ≈ 0) and associated switching losses. Its wide bandgap enables stable 1200 V blocking with low VF drift over temperature - VF increases only from 1.35 V (25 °C) to 1.75 V (150 °C) at 15 A.
The D²PAK HV package provides enhanced insulation: 5.38 mm minimum creepage between anode and cathode (with conformal coating), UL94 V0 epoxy, and low junction-to-case thermal resistance (0.45 °C/W typ.) for high-power density thermal management in compact industrial and automotive-grade systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Enables use in 800 V DC bus systems with 50% safety margin per IEC 60664-1 |
| IF(AV) | 15 A at Tc = 155 °C - Sustains continuous conduction in high-power PFC stages without derating |
| VF (typ.) | 1.35 V @ 15 A, 25 °C - Reduces conduction loss vs. Si FRD (ΔP ≈ 0.5 W per device at 15 A) |
| Qcj | 94 nC @ VR = 800 V - Low capacitive turn-off charge minimizes EMI and snubber losses |
| Rth(j-c) | 0.45 °C/W typ. - Enables >100 W dissipation with moderate heatsink (ΔT = 45 °C at 100 W) |
| Tj max | 175 °C - Supports operation in sealed enclosures or high-ambient environments (e.g., under-hood EV chargers) |
| CdA-K | 5.38 mm min. - Meets reinforced insulation requirements for 1000 V AC working voltage per IEC 60664-1 |
Pinout & Package
Housed in D²PAK HV (TO-263-2HV) package: surface-mount, isolated tab (anode), 2-pin configuration, UL94 V0 epoxy, 1.48 g weight, tape-and-reel delivery (1000 pcs).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Tab) | High-current input / heat sink interface | Electrically active and thermally conductive metal tab - must be electrically isolated from PCB ground unless circuit topology requires common-anode configuration |
| Cathode (Lead) | Output / return path | Soldered lead connects to output node; carries full forward current and supports high di/dt during turn-on |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr ≈ 0) | Eliminates switching tail current and associated losses in hard-switched PFC boost stages |
| Temperature-stable VF | Forward voltage rise <0.4 V from 25 °C to 150 °C at 15 A - ensures predictable conduction loss across operating range |
| High surge capability | IFSM = 105 A (10 ms, Tc = 25 °C) - withstands inrush and fault currents in uncontrolled rectifier front-ends |
| D²PAK HV creepage | 5.38 mm anode-to-cathode clearance - satisfies reinforced insulation for 1000 V AC mains-connected equipment |
Applications
| On-Board EV Charger | Industrial PFC Module |
|---|---|
Use Scenario: Bidirectional AC/DC conversion in 11–22 kW on-board chargers with dual-phase interleaved boost PFC. IC Role / Device Role / Timing Role: Output rectifier in high-frequency boost stage; handles 15 A average current at 100–300 kHz switching. Use Value: Zero Qrr eliminates cross-conduction loss during phase interleaving; 175 °C rating allows compact heatsink design in space-constrained vehicle compartments. | Use Scenario: Three-phase active front-end PFC in 15 kW industrial UPS or motor drives. IC Role / Device Role / Timing Role: High-voltage leg diode in Vienna rectifier topology; blocks 1200 V DC link with minimal leakage (<90 µA at 25 °C). Use Value: Low IR and stable Cj (1200 pF @ 0 V) reduce reactive current distortion and improve THD compliance at full load. |
| DC Fast Charging Station | Renewable Energy Inverter |
Use Scenario: Secondary-side rectification in 150–350 kW liquid-cooled DC fast chargers with SiC-based LLC resonant converters. IC Role / Device Role / Timing Role: Output synchronous rectifier replacement; conducts 15 A DC with <1.5 V drop at 150 °C junction. Use Value: 94 nC Qcj enables clean turn-off with minimal voltage overshoot into 1000 V+ bus, reducing snubber component count and size. | Use Scenario: Boost-stage freewheeling diode in 10–25 kW solar string inverters operating at 1000–1500 V DC input. IC Role / Device Role / Timing Role: High-voltage clamp and energy transfer path in MPPT boost converter; rated for 1200 V repetitive blocking. Use Value: 5.38 mm creepage distance meets IEC 62109-1 isolation requirements for PV system DC side, enabling single-package safety certification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D15120E (Wolfspeed) | Same 15 A / 1200 V rating; VF = 1.5 V typ. @ 15 A, 25 °C; Rth(j-c) = 0.55 °C/W; creepage = 4.5 mm | Limited to 150 °C max Tj; lower creepage restricts use in Class I reinforced insulation designs | Select when thermal margin permits higher Rth(j-c) and IEC 60664-1 creepage is not required |
| SS15120 (Littelfuse) | VF = 1.45 V typ.; IFSM = 95 A; Rth(j-c) = 0.50 °C/W; no published creepage data | Lower surge rating reduces robustness in high-inrush PFC; absence of creepage validation limits safety-certified deployment | Prefer for cost-sensitive non-safety-critical DC/DC where surge margin is relaxed |
Compared with C3D15120E and SS15120, STPSC15H12G2-TR offers superior thermal performance (0.45 °C/W), highest junction temperature rating (175 °C), and certified 5.38 mm creepage - making it the only option qualified for IEC 60664-1-compliant EV charging and industrial PFC modules requiring reinforced insulation.
Availability
STPSC15H12G2-TR is available at Aetrix Electronics and suitable for EV charging station power supplies, industrial PFC modules, and renewable energy DC/DC converters requiring stable component supply, long-lifecycle support, and IEC 60664-1-compliant packaging.
Supply support for STPSC15H12G2-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's STPSC family of SiC Schottky diodes - engineered specifically for high-efficiency, high-reliability power conversion in 1200 V systems where zero recovery, high-temperature operation, and safety-certified packaging are mandatory.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF(AV) = 15 A at Tc = 155 °C under DC conditions. Operation above 155 °C case temperature requires derating per Figure 3; sustained Tc > 160 °C risks exceeding 175 °C junction limit even with Rth(j-c) = 0.45 °C/W. Thermal design must maintain Tc ≤ 155 °C for full-rated current.
Does this diode require a gate driver or external control signal?
No - STPSC15H12G2-TR is an uncontrolled two-terminal power diode. It conducts when anode voltage exceeds cathode voltage by >VF and blocks when reverse biased. No gate, control pin, or driver circuitry is involved; it operates autonomously based on applied voltage polarity and magnitude.
Can this part replace a silicon fast recovery diode in an existing PFC design?
Yes - direct replacement is feasible if layout accommodates D²PAK HV footprint and thermal interface. Key benefits include elimination of snubbers (due to zero Qrr), reduced heatsink size (lower VF and Rth(j-c)), and extended lifetime (no thermal runaway risk). Verify layout creepage and solder mask coverage to maintain 5.38 mm anode–cathode spacing.
Is the D²PAK HV package RoHS and REACH compliant?
Yes - the device carries ECOPACK2 compliance, indicating full adherence to RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free matte tin plating is used on leads, and the UL94 V0 epoxy meets halogen-free requirements per IEC 61249-2-21.
STPSC15H12G2-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®2
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 15A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 5 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 90 µA @ 1200 V
- Capacitance @ Vr, F:
- 1200pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK HV
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC15H12G2-TR FAQ
1.How can I place an order for STPSC15H12G2-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC15H12G2-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC15H12G2-TR reliable?
The price and inventory of STPSC15H12G2-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC15H12G2-TR is usually 5 days.
3.What payment methods are accepted for STPSC15H12G2-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC15H12G2-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC15H12G2-TR?
STPSC15H12G2-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC15H12G2-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC15H12G2-TR?
For technical support, including STPSC15H12G2-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC15H12G2-TR requirements.
6.How does Aetrix verify that STPSC15H12G2-TR is sourced from the original manufacturer or authorized distributors?
All STPSC15H12G2-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC15H12G2-TR meets industry standards.
7.What is the process for return or replacement of STPSC15H12G2-TR?
All STPSC15H12G2-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC15H12G2-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC15H12G2-TR part is unused and in its original packaging.
Return procedure for STPSC15H12G2-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STPSC15H12G2-TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
