STMicroelectronics STPSC15H12WL

Overview

STPSC15H12WL from STMicroelectronics is a 1200 V, 15 A silicon carbide Schottky power rectifier in DO-247 LL package, designed for high-efficiency hard-switching applications including solar boost converters and EV charging stations. It delivers negligible reverse recovery, temperature-independent switching, low 1.35 V typical forward voltage at 15 A, and operates from –40 °C to +175 °C.

For engineers reviewing the STPSC15H12WL datasheet, STPSC15H12WL pinout, STPSC15H12WL application, or STPSC15H12WL equivalent, key selection criteria include its 1200 V blocking rating, 61 A peak forward current capability at 150 °C case temperature, 78 pF junction capacitance at 800 V, 94 nC capacitive charge, and ECOPACK2 compliance for sustainable design.

Technical Context

This SiC Schottky diode leverages wide-bandgap silicon carbide to achieve a 1200 V rating with low VF and zero reverse recovery charge-enabling elimination of snubbers and reduction of EMI in high-frequency PFC and secondary-side rectification. Its capacitive turn-off behavior remains stable across –40 °C to +175 °C junction temperature.

The device supports high surge robustness (90 A non-repetitive surge at TC = 150 °C, tp = 10 ms) and thermal reliability via a DO-247 LL package with 0.50–0.70 °C/W junction-to-case thermal resistance, optimized for conduction-cooled industrial power stages.

Key Specifications

Pinout & Package

STPSC15H12WL uses the DO-247 LL through-hole package: an industry-standard, high-power, thermally enhanced outline with two leads (anode and cathode), UL94 V0 epoxy, and recommended mounting torque of 0.8 N·m.

Key Features

Applications

Availability

STPSC15H12WL is available at Aetrix Electronics and suitable for solar photovoltaic boost converters, EV DC fast charging modules, and industrial motor drive braking circuits requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STPSC15H12WL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STPSC15H12WL belongs to the STPOWER SiC Diode product line-engineered specifically for high-efficiency, high-voltage power conversion in renewable energy, electric mobility, and industrial automation systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STPSC15H12WL is rated for continuous average forward current of 15 A at T_C = 150 °C in DO-247 LL package. Exceeding this case temperature requires derating per Figure 4 in DS11586; sustained operation above 150 °C risks exceeding the 175 °C maximum junction temperature, especially under high I_F(RMS).

How does its junction capacitance affect EMI in high-frequency designs?

With C_J = 78 pF at 800 V and minimal voltage dependence, the STPSC15H12WL produces predictable displacement current during turn-off-reducing broadband EMI compared to silicon diodes. Its low C_J also lowers capacitive coupling into gate loops, easing layout in SiC half-bridges operating above 100 kHz.

Can it replace silicon diodes in existing 1200 V designs without layout changes?

Yes-DO-247 LL footprint is mechanically compatible with many TO-247 variants, and its 1200 V rating matches common silicon rectifier voltage grades. However, reduced V_F and zero Q_rr may require re-optimizing snubber networks and gate drive strength to avoid overvoltage due to faster di/dt.

Is thermal interface material required between the cathode tab and heatsink?

While not mandatory, using thermally conductive paste or pad between the cathode lead (which serves as the primary thermal path) and heatsink improves R_th(j-c) by 10–20%, especially under high pulse loads. ST recommends torque of 0.8 N·m ±0.2 N·m for optimal thermal contact without lead deformation.