STMicroelectronics STPSC16H065CT

Overview

STPSC16H065CT from STMicroelectronics is a 650 V, dual-die silicon carbide Schottky power diode in TO-220AB package, rated for 8 A average forward current per diode (16 A per device), with negligible reverse recovery and temperature-independent switching behavior. It delivers low conduction loss (VF = 1.56 V typ. @ 25 °C, 8 A) and high surge robustness (IFSM = 75 A, 10 ms sine), enabling high-efficiency PFC and bridgeless rectifier stages in industrial SMPS.

For engineers reviewing the STPSC16H065CT datasheet, STPSC16H065CT pinout, STPSC16H065CT application, or STPSC16H065CT equivalent, key selection criteria include its 650 V VRRM rating, dual-diode configuration in a single TO-220AB housing, junction-to-case thermal resistance of 1.3 °C/W per diode, and ultra-low Qcj (23.5 nC @ 400 V) for hard-switching EMI reduction.

Technical Context

This dual SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-voltage rectification. Its wide-bandgap construction eliminates minority-carrier storage, resulting in zero reverse recovery charge and no temperature-dependent switching losses - critical for maintaining efficiency across -40 to +175 °C operating range.

The device integrates two independent 650 V/8 A diodes sharing a common cathode connection in a thermally optimized TO-220AB package. Its low Rth(j-c) (1.3 °C/W per diode) and high IFSM (75 A) support reliable operation under transient overload and continuous conduction mode in interleaved boost converters.

Key Specifications

Pinout & Package

STPSC16H065CT uses a TO-220AB package with three terminals: Pin 1 (Anode 1), Pin 2 (Cathode, common to both diodes), Pin 3 (Anode 2). The metal tab is electrically connected to the cathode and serves as primary thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D16065A and SS16HE65, STPSC16H065CT offers the lowest Rth(j-c) (1.3 °C/W) and highest IFSM (75 A), making it optimal for thermally constrained, high-reliability industrial PFC where thermal management and surge immunity are prioritized over tab isolation.

Availability

STPSC16H065CT is available at Aetrix Electronics and suitable for industrial server PSUs, telecom rectifier modules, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STPSC16H065CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and SiC power components for automotive, industrial, and consumer markets.

ST's SiC power diode product line targets high-efficiency, high-frequency power conversion systems - specifically engineered to replace silicon FRDs in PFC, UPS, and renewable energy inverters where zero recovery and thermal stability are mandatory.

FAQ

What is the cathode connection configuration in STPSC16H065CT?

The cathode is internally common to both diodes and exposed via the metal tab (Pin 2). This configuration enables straightforward implementation in bridgeless and interleaved PFC topologies where shared cathode simplifies PCB routing and thermal design. The tab must be electrically isolated from chassis ground unless system architecture requires cathode grounding.

Can STPSC16H065CT replace standard silicon fast recovery diodes directly?

Yes - it is a direct functional replacement in most 600 V-class applications due to identical TO-220AB footprint and pinout. However, its lower VF and zero Qrr reduce gate drive stress on companion switches and eliminate snubber networks, often allowing higher switching frequency or smaller passive components without layout changes.

What is the maximum recommended torque for mounting the TO-220AB tab?

The manufacturer specifies a recommended torque range of 0.4 to 0.6 N·m for the mounting screw. Exceeding 0.6 N·m risks cracking the epoxy body or deforming the leadframe, which can degrade thermal performance and mechanical reliability. Use a calibrated torque screwdriver and verify flatness of heatsink surface before assembly.

How does STPSC16H065CT perform at elevated junction temperatures?

At Tj = 150 °C, VF increases to 1.98 V (typ.) - a +0.42 V rise from 25 °C - while reverse leakage remains within spec (≤335 µA at VR = 650 V). Unlike silicon diodes, its switching characteristics remain stable, with no increase in Qcj or Cj, ensuring consistent EMI and efficiency behavior across the full -40 to +175 °C operating range.