STMicroelectronics STPSC20H065CW

Overview

STPSC20H065CW from STMicroelectronics is a 650 V, 20 A average forward current silicon carbide Schottky diode in TO-247 package, designed for high-efficiency PFC stages in industrial and server power supplies. It delivers negligible reverse recovery, temperature-independent switching, and 470 A non-repetitive surge capability at 25 °C, enabling robust operation in hard-switching boost converters.

For engineers reviewing the STPSC20H065CW datasheet, STPSC20H065CW pinout, STPSC20H065CW application, or STPSC20H065CW equivalent, key selection criteria include its 1.56 V typical forward voltage at 10 A/25 °C, 28.5 nC capacitive charge at 400 V, junction-to-case thermal resistance of 0.83 °C/W (typ), and suitability for continuous conduction mode (CCM) PFC designs requiring high reliability under thermal stress.

Technical Context

This dual-die SiC Schottky diode integrates two 10 A parallel-connected chips in a single TO-247 package, sharing a common cathode (K) and isolated anodes (A1, A2). Its wide-bandgap construction eliminates minority-carrier storage, resulting in zero reverse recovery charge and minimal voltage ringing during turn-off.

The device operates up to 175 °C junction temperature with stable forward voltage and leakage characteristics-VF increases only ~0.42 V from 25 °C to 150 °C at 10 A, while IR remains ≤425 µA at 150 °C and VR = 650 V-making it ideal for thermally constrained, high-frequency PFC topologies.

Key Specifications

Pinout & Package

TO-247 package with isolated anode terminals (A1, A2) and shared cathode (K); electrically symmetrical dual-die configuration optimized for interleaved or parallel PFC phases.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D20065I and SS12065B, STPSC20H065CW uniquely supports dual-phase interleaved PFC via isolated anodes while delivering best-in-class thermal resistance (0.83 °C/W) and surge robustness (470 A), making it optimal for high-density, high-reliability 2–3 kW systems.

Availability

STPSC20H065CW is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STPSC20H065CW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-frequency power factor correction and switching power supply applications demanding zero-recovery performance and thermal resilience.

FAQ

What is the maximum recommended case temperature for continuous operation?

The STPSC20H065CW is rated for 20 A average forward current at TC = 125 °C, with absolute maximum junction temperature of 175 °C. Using the typical Rth(j-c) of 0.83 °C/W, sustained operation at TC = 135 °C requires derating to approximately 17 A to maintain Tj ≤ 175 °C under worst-case thermal conditions.

Can A1 and A2 be paralleled externally for higher current handling?

Yes-A1 and A2 are electrically isolated anodes connected to separate SiC dies within the same package. They may be paralleled with matched PCB trace lengths and symmetric thermal mounting to achieve effective 20 A per anode, but external paralleling beyond the rated 20 A device total is not validated and risks current imbalance and thermal runaway.

How does its capacitive charge compare to silicon alternatives in PFC designs?

At 28.5 nC (VR = 400 V), STPSC20H065CW's Qcj is ~70% lower than typical 600 V Si fast recovery diodes (~90–100 nC). This directly reduces turn-off switching loss and dv/dt-induced EMI, enabling clean operation at 150–200 kHz without added snubbers-unachievable with silicon counterparts.

Is this device suitable for use in automotive on-board chargers (OBC)?

No-ST explicitly states in the datasheet that its STPSC series is not designed or authorized for automotive applications, including OBCs. The device lacks AEC-Q101 qualification, automotive-grade screening, and guaranteed operation under automotive temperature cycling, humidity, and vibration requirements.