STMicroelectronics STPSC20H065CWY

Overview

STPSC20H065CWY from STMicroelectronics is an AEC-Q101-qualified 650 V, 20 A (per device) automotive-grade silicon carbide Schottky diode in TO-247 package. It delivers zero reverse recovery, temperature-independent switching, and 470 A non-repetitive surge capability, enabling high-efficiency PFC stages in on-board chargers and DC-DC converters.

For engineers reviewing the STPSC20H065CWY datasheet, STPSC20H065CWY pinout, STPSC20H065CWY application, or STPSC20H065CWY equivalent, key selection criteria include junction-to-case thermal resistance (0.83 °C/W typ.), forward voltage (1.56 V @ 10 A, 25 °C), and capacitive charge (28.5 nC @ 400 V), critical for hard-switching EMI and thermal design.

Technical Context

This dual-die SiC Schottky diode uses wide-bandgap silicon carbide to achieve 650 V blocking with no minority-carrier storage. Its unipolar conduction eliminates reverse recovery charge (Qrr ≈ 0) and associated ringing, making it suitable for continuous-conduction-mode (CCM) PFC operating up to 175 °C junction temperature.

The device integrates two independent 10 A diodes in a single TO-247 package, sharing a common cathode terminal. Thermal coupling between dies is characterized by Rth(c) = 0.4 °C/W, enabling accurate loss distribution modeling using per-die conduction loss equation: P = 1.35 × IF(AV) + 0.115 × IF²(RMS).

Key Specifications

Pinout & Package

TO-247 package with isolated mounting tab (heat-sink plane). Cathode (K) and Anode 1 (A1), Anode 2 (A2) are electrically separate terminals; K is common to both diodes. Mounting torque: 0.55 N·m (max 1.0 N·m).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065I and SS120P65B, STPSC20H065CWY uniquely combines dual-anode integration, AEC-Q101 qualification, and lowest Q_cj among 20 A-class 650 V SiC diodes-making it optimal for thermally constrained, safety-critical automotive PFC designs.

Availability

STPSC20H065CWY is available at Aetrix Electronics and suitable for on-board chargers, industrial PFC modules, and automotive DC-DC converters requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for STPSC20H065CWY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This diode belongs to ST's STPSC family of automotive-qualified SiC Schottky diodes, engineered specifically for high-efficiency, high-reliability PFC and rectification in harsh-environment power conversion systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STPSC20H065CWY supports continuous operation at T_c = 125 °C for its rated 20 A average current per device. At T_c = 135 °C, the per-die rating drops to 10 A due to thermal resistance limits. Derating curves in Figure 4 confirm 175 °C junction temperature is maintained within safe operating area under these conditions.

Can this diode replace a standard silicon diode in an existing PFC design without layout changes?

No. While pin-compatible with TO-247 silicon diodes, the STPSC20H065CWY's dual-anode structure requires separate PCB traces for A1 and A2. Replacing a single-anode diode demands re-routing to isolate the two anodes and ensure balanced current sharing-otherwise, thermal imbalance may exceed R_th(j-c) limits.

How does the 0.4 °C/W coupling resistance affect thermal design?

R_th(c) = 0.4 °C/W quantifies thermal crosstalk between the two internal dies. When one diode dissipates 10 W and the other 5 W, the hotter die experiences an additional 2 °C rise due to heat conducted through the shared substrate-requiring combined loss modeling rather than independent die analysis.

Is PPAP documentation available for automotive qualification?

Yes. ST provides full PPAP Level 3 documentation-including design FMEA, process flow diagrams, control plans, and dimensional reports-for STPSC20H065CWY upon request. The device is certified AEC-Q101 Grade 0 (−40 °C to +175 °C), with test reports traceable to ST's certified automotive labs.