STMicroelectronics STPSC20H12CWL

Overview

STPSC20H12CWL from STMicroelectronics is a 1200 V, 20 A dual-die silicon carbide Schottky power rectifier in TO-247 long-lead package, featuring 1.35 V typical forward voltage at 10 A and negligible reverse recovery for hard-switching PFC and secondary-side SMPS applications.

For engineers reviewing the STPSC20H12CWL datasheet, STPSC20H12CWL pinout, STPSC20H12CWL application, or STPSC20H12CWL equivalent, key selection criteria include junction-to-case thermal resistance (0.35 °C/W device-level), surge robustness (71 A IFSM), temperature-independent switching, and ECOPACK®2 compliance for industrial power conversion designs.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-voltage rectification where zero reverse recovery charge (Qcj = 57 nC at 800 V) and stable VF across -40 °C to +175 °C are critical. Its wide band-gap construction enables 1200 V blocking with low conduction loss.

The dual-die configuration delivers 20 A average forward current per device (10 A per die) with parallel-connected anodes and cathodes, supported by low junction-to-case thermal resistance (0.35 °C/W max) and high surge capability (71 A, 10 ms sinusoidal).

Key Specifications

Pinout & Package

TO-247 long leads (TO-247 LL) package with isolated mounting hole, designed for high-voltage isolation and mechanical stability in power modules and open-frame PSUs. Thermal path optimized for conduction cooling via heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky rectifier applications.

Compared with C3D20120D and SS12012, STPSC20H12CWL offers superior thermal performance (0.35 °C/W), lower VF (1.35 V), and tighter Qcj control (57 nC), making it optimal for high-density, high-efficiency PFC and isolated DC/DC where thermal headroom and EMI are critical constraints.

Availability

STPSC20H12CWL is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, server power supplies, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STPSC20H12CWL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STPSC series belongs to ST's silicon carbide power diode product line, engineered specifically for high-efficiency, high-reliability rectification in 800–1200 V systems where thermal stability and zero recovery are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STPSC20H12CWL supports continuous operation up to TC = 150 °C, delivering 20 A IF(AV) at that condition. Derating is not required below this limit, and the device maintains full 1200 V VRRM rating across its entire -40 °C to +175 °C junction temperature range.

Can STPSC20H12CWL be used in parallel with other SiC diodes?

Yes - its positive temperature coefficient of VF ensures inherent current sharing. However, matched layout symmetry (equal trace inductance/resistance) and shared thermal interface are required. ST recommends using identical part numbers and avoiding mixing with Si or different SiC vendors' devices.

Is the TO-247 LL package electrically isolated?

Yes - the metal tab (case) is electrically isolated from both anode and cathode terminals, rated for 1200 V isolation. ST specifies minimum creepage and clearance distances in the datasheet; an insulating washer must be used when mounting to a grounded heatsink.

Does STPSC20H12CWL require a gate resistor or snubber network?

No - unlike silicon diodes or MOSFETs, this SiC Schottky diode has no gate and exhibits no reverse recovery. Snubbers are unnecessary in most topologies; however, a small RC snubber may still be used for EMI filtering in ultra-high dI/dt environments (>5 kA/µs).