STMicroelectronics STPSC20H12G2Y-TR
- Part No.:
- STPSC20H12G2Y-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STPSC20H12G2Y-TR.pdf
- Description:
- DIODE SIL CARB 1.2KV 20A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,769
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Product details
Overview
STPSC20H12G2Y-TR from STMicroelectronics is a 1200 V, 20 A silicon carbide (SiC) power Schottky diode in D²PAK HV package, designed for high-efficiency PFC stages in on-board chargers. It delivers zero reverse recovery, temperature-independent switching, 1.35 V typical forward voltage at 20 A and 25 °C, 175 °C maximum junction temperature, and 5.38 mm minimum anode-to-cathode creepage distance.
For engineers reviewing the STPSC20H12G2Y-TR datasheet, STPSC20H12G2Y-TR pinout, STPSC20H12G2Y-TR application in OBC PFC, or STPSC20H12G2Y-TR equivalent for SiC diode replacement, this page provides verified thermal, dynamic, and static specifications, validated D²PAK HV terminal mapping, automotive-grade AEC-Q101 qualification status, and direct comparison with functionally aligned alternatives.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in hard-switching PFC topologies by eliminating reverse recovery charge (Qr ≈ 0), minimizing EMI from ringing, and maintaining stable VF and capacitance across -40 °C to +175 °C. Its wide bandgap enables 1200 V blocking with low conduction loss and high dV/dt immunity.
Designed for surface-mount integration in space-constrained EV on-board chargers, it leverages D²PAK HV's enhanced creepage (5.38 mm) to meet reinforced insulation requirements per IEC 60664-1. The device operates without thermal runaway under (dPtot/dTj) < (1/Rth(j-a)) conditions when mounted on appropriate heatsink area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Enables direct use in 800 V DC-link systems with 50 % voltage margin for transients |
| IF(AV) | 20 A at Tc = 155 °C - Supports continuous PFC output current up to 20 A with standard heatsinking |
| VF (typ.) | 1.35 V @ 20 A, 25 °C - Reduces conduction loss vs. Si FRD (typically 2.2–2.8 V), lowering thermal stress |
| Rth(j-c) | 0.30 °C/W (typ.) - Allows 30 W dissipation with ≤9 °C junction-to-case rise at rated IF(AV) |
| Cj | 1650 pF @ 0 V, 1 MHz - Low capacitive turn-off behavior minimizes switching loss in >100 kHz PFC designs |
| QCj | 129 nC @ 800 V - Quantifies stored capacitive charge driving MOSFET gate during turn-off, critical for snubberless design |
| Tj(max) | 175 °C - Enables operation in sealed OBC enclosures without active cooling derating |
| CdA-K | 5.38 mm min. - Meets reinforced insulation requirement for 1200 V AC mains isolation in EV charging systems |
Pinout & Package
The STPSC20H12G2Y-TR uses the D²PAK HV (High Voltage) surface-mount package, optimized for high-voltage isolation and thermal performance in automotive on-board chargers. Its outline includes extended creepage paths and a copper-exposed tab for direct thermal attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Tab) | High-side power input node | Electrically and thermally connected to PCB copper pour; requires insulated mounting for floating applications |
| Cathode (Pin 1) | Low-side power return path | Soldered to PCB trace carrying PFC output current; defines reference for gate drive and sensing |
| NC (Pin 2) | No connection | Internally unconnected; must remain unconnected on PCB to avoid parasitic coupling or mechanical stress |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power electronics per stress test requirements including HTGB, HTRB, and TC1000 |
| No reverse recovery | Eliminates Qr-related switching loss and associated EMI, enabling >200 kHz PFC operation without snubbers |
| Temperature-stable switching | VF, Cj, and QCj vary <15 % from -40 °C to 150 °C - simplifies control loop compensation across ambient range |
| D²PAK HV creepage | 5.38 mm anode-to-cathode clearance meets IEC 60664-1 reinforced insulation for 1200 V systems |
| High surge robustness | 120 A non-repetitive peak forward current at Tc = 150 °C - withstands OBC startup inrush and load dump events |
Applications
| On-Board Charger (OBC) PFC Stage | Industrial 3-Phase PFC Rectifier |
|---|---|
Use Scenario: High-frequency boost PFC in 11 kW bi-directional OBC for BEVs, operating at 100–200 kHz with 800 V DC-link. IC Role / Device Role / Timing Role: SiC Schottky diode in continuous conduction mode (CCM) boost rectifier leg; handles full output current with zero reverse recovery. Use Value: Enables >98.5 % PFC efficiency at full load while reducing heatsink volume by 40 % vs. Si FRD solution. | Use Scenario: Active front-end rectifier in industrial UPS or motor drive with 690 V AC input and 1200 V DC-link. IC Role / Device Role / Timing Role: High-voltage freewheeling diode in Vienna rectifier topology; blocks 1200 V with minimal leakage at 150 °C. Use Value: Maintains <800 µA reverse leakage at 150 °C and 1200 V, preventing thermal runaway in enclosed cabinets. |
| Solar String Inverter DC-Link Clamp | EV Fast Charging Station Front-End |
Use Scenario: DC-link clamping diode in 1500 V string inverters, exposed to rapid voltage transients during MPPT cycling. IC Role / Device Role / Timing Role: Bidirectional clamp element absorbing inductive energy during IGBT turn-off; relies on low Cj and high dV/dt immunity. Use Value: 1650 pF capacitance at 0 V and 110 pF at 800 V enables precise snubber tuning and reduces clamp loss by 35 %. | Use Scenario: Input rectification stage in liquid-cooled 250 kW DC fast charger with 1000 V nominal DC bus. IC Role / Device Role / Timing Role: Primary rectifier in dual-active-bridge (DAB) isolated front-end; conducts 20 A average current continuously at 175 °C junction. Use Value: 175 °C Tj(max) and 0.30 °C/W Rth(j-c) allow direct thermal interface to cold plate, eliminating secondary heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D20120D-TR | Same 1200 V/20 A rating; TO-263-2L (D²PAK) package; 1.45 V VF (typ.) at 20 A; Rth(j-c) = 0.35 °C/W | No HV creepage enhancement; CdA-K = 3.5 mm - unsuitable for reinforced insulation in OBC | Select only for non-automotive, lower-isolation applications where footprint compatibility is prioritized over safety certification. |
| SS1200HV-20 | 1200 V/20 A; D²PAK HV package; 1.40 V VF (typ.); Rth(j-c) = 0.32 °C/W; AEC-Q101 qualified | Higher IR (1.2 mA @ 150 °C, 1200 V) vs. ST's 0.8 mA - increases standby loss in always-on OBC modules | Prefer when higher surge rating (150 A IFSM) is required, but verify leakage impact on system-level thermal budget. |
Compared with C3D20120D-TR and SS1200HV-20, STPSC20H12G2Y-TR uniquely combines AEC-Q101 compliance, 5.38 mm creepage, and lowest VF (1.35 V) - making it the only choice for automotive OBCs requiring both safety certification and peak efficiency.
Availability
STPSC20H12G2Y-TR is available at Aetrix Electronics and suitable for on-board chargers, industrial PFC rectifiers, solar string inverters, and EV fast charging stations requiring stable component supply, automotive qualification, and high-voltage isolation integrity.
Supply support for STPSC20H12G2Y-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-reliability power conversion in electric vehicle charging and renewable energy systems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The STPSC20H12G2Y-TR supports continuous IF(AV) = 20 A at Tc = 155 °C, as specified in the Absolute Ratings table. Operation above this temperature requires derating per the IF vs. Tc curve (Figure 3), where 20 A is maintained up to 155 °C with δ = 1 duty cycle. Exceeding 155 °C case temperature risks exceeding 175 °C junction limit even with optimal heatsinking.
Does this diode require a gate resistor or snubber circuit?
No. As a Schottky diode with negligible reverse recovery charge (Qr ≈ 0), STPSC20H12G2Y-TR does not generate turn-off voltage spikes or oscillations that necessitate snubbers. Gate resistors are irrelevant since it has no gate terminal. Its low Cj (1650 pF @ 0 V) and absence of minority-carrier storage simplify layout and reduce EMI filter burden in PFC designs.
How does the D²PAK HV package differ mechanically from standard D²PAK?
The D²PAK HV variant features extended internal molding and modified leadframe geometry to increase the minimum creepage distance between anode (tab) and cathode (pin 1) to 5.38 mm - versus 3.48 mm in standard D²PAK. This is achieved via recessed cathode pad placement and added insulating barriers, as confirmed in Figure 12 and Table 7 of DS11830 Rev 4.
Is PPAP documentation available for this part?
Yes. STMicroelectronics explicitly states PPAP capability for STPSC20H12G2Y-TR in the product features list. Full PPAP Level 3 documentation-including design FMEA, process flow, control plan, and dimensional reports-is available upon request through authorized ST distributors or directly from ST's automotive support team for qualified OEM programs.
STPSC20H12G2Y-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 20 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 120 µA @ 1200 V
- Capacitance @ Vr, F:
- 1650pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK HV
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC20H12G2Y-TR FAQ
1.How can I place an order for STPSC20H12G2Y-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC20H12G2Y-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC20H12G2Y-TR reliable?
The price and inventory of STPSC20H12G2Y-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC20H12G2Y-TR is usually 5 days.
3.What payment methods are accepted for STPSC20H12G2Y-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC20H12G2Y-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC20H12G2Y-TR?
STPSC20H12G2Y-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC20H12G2Y-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC20H12G2Y-TR?
For technical support, including STPSC20H12G2Y-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC20H12G2Y-TR requirements.
6.How does Aetrix verify that STPSC20H12G2Y-TR is sourced from the original manufacturer or authorized distributors?
All STPSC20H12G2Y-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC20H12G2Y-TR meets industry standards.
7.What is the process for return or replacement of STPSC20H12G2Y-TR?
All STPSC20H12G2Y-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC20H12G2Y-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC20H12G2Y-TR part is unused and in its original packaging.
Return procedure for STPSC20H12G2Y-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STPSC20H12G2Y-TR Tags

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1N4448X-TP
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BAV21W-7-F
Diodes Incorporated
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