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STMicroelectronics STPSC2H12B2Y-TR
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- Part No.:
- STPSC2H12B2Y-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STPSC2H12B2Y-TR.pdf
- Description:
- DIODE SIL CARBIDE 1.2KV 5A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:12,015
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Product details
Overview
STPSC2H12B2Y-TR from STMicroelectronics is a 1200 V, 2 A automotive-grade silicon carbide Schottky power diode in DPAK HV package. It delivers zero reverse recovery, 1.35 V typical forward voltage at 2 A and 25 °C, 3 mm creepage distance per IEC 60664-1, and operates from –40 °C to +175 °C junction temperature-designed specifically for bootstrap and snubber circuits in SiC MOSFET-based high-efficiency inverters and on-board chargers.
For engineers reviewing the STPSC2H12B2Y-TR datasheet, STPSC2H12B2Y-TR pinout, STPSC2H12B2Y-TR application, or STPSC2H12B2Y-TR equivalent, key selection criteria include its negligible turn-off ringing, temperature-independent capacitive switching behavior, AEC-Q101 qualification, and compatibility with high-frequency (>10 kHz), high-temperature SiC gate driver topologies.
Technical Context
This SiC Schottky diode leverages wide-bandgap silicon carbide to achieve 1200 V blocking capability while maintaining unipolar conduction-eliminating minority-carrier storage and associated reverse recovery charge (Qrr ≈ 0). Its junction capacitance (190 pF at 0 V, 13 pF at 800 V) and total capacitive charge (15.6 nC at 800 V) are defined by voltage-dependent depletion layer physics, not diffusion dynamics.
The device uses a planar Schottky barrier structure on semi-insulating SiC substrate, enabling stable forward voltage (VF = 1.35–2.25 V across –40 to +150 °C) and ultra-low reverse leakage (<80 µA at 150 °C, VR = VRRM). Thermal resistance Rth(j-c) is 1.9 °C/W (typ), supporting 2 A DC operation at Tc = 160 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Enables use in 800 V DC-link systems with 50% voltage margin for transient overvoltage robustness |
| IF(AV) | 2 A at Tc = 160 °C - Sustains continuous conduction in compact heatsinked layouts without derating |
| VF (typ) | 1.35 V @ 2 A, 25 °C - Reduces conduction loss to ~2.7 W at rated current, critical for thermal management |
| Cj | 190 pF @ 0 V - Defines high-frequency switching node impedance; drops to 13 pF @ 800 V for low EMI snubbing |
| QCj | 15.6 nC @ 800 V - Quantifies stored capacitive energy released during turn-off; enables precise loss modeling |
| Creepage | 3.0 mm (anode-to-cathode) - Meets IEC 60664-1 industrial and automotive reinforced insulation requirements |
| Tj(max) | +175 °C - Supports operation in under-hood EV power modules and high-ambient industrial drives |
Pinout & Package
STPSC2H12B2Y-TR is housed in a surface-mount DPAK HV (2-lead) package with exposed cathode tab for thermal conduction. The package complies with UL 94 V0 epoxy rating and features optimized creepage geometry between anode and cathode terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | High-side connection point for reverse-biased blocking path | Connected to positive DC rail in bootstrap configuration; withstands full 1200 V transient stress |
| Cathode (Tab/Lead 2) | Low-side return and thermal interface | Electrically and thermally tied to PCB copper pour; provides primary heat dissipation path (Rth(j-c) = 1.9 °C/W) |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr ≈ 0) | Eliminates switching losses and EMI spikes in hard-switched SiC half-bridges |
| AEC-Q101 qualified | Validated for automotive powertrain applications including traction inverters and OBCs |
| 3 mm creepage distance | Enables single-layer PCB isolation compliance without slotting or spacing penalties |
| 175 °C max junction temperature | Permits direct integration into high-power-density modules operating near thermal limits |
| ECOPACK2 compliant | Meets RoHS, halogen-free, and lead-free assembly requirements for global automotive supply chains |
Applications
| Bootstrap Diode for SiC Half-Bridge | Snubber Diode in High-Frequency Inverter |
|---|---|
Use Scenario: Supplies gate drive voltage to high-side SiC MOSFET in 400–800 V DC-link motor drives. IC Role / Device Role / Timing Role: Unidirectional charge pump element that conducts only during low-side switch ON phase; blocks full DC-link voltage during high-side conduction. Use Value: Zero Qrr prevents cross-conduction risk and eliminates need for active gate drive timing compensation. | Use Scenario: Clamps voltage spikes across SiC MOSFETs during turn-off in >50 kHz LLC resonant converters. IC Role / Device Role / Timing Role: Fast-recovery clamping path that absorbs inductive energy without oscillation or secondary breakdown. Use Value: 13 pF capacitance at 800 V ensures minimal displacement current, reducing snubber resistor loss and thermal stress. |
| Clamping Diode in Traction Inverter | DC-Link Protection in On-Board Charger |
Use Scenario: Absorbs regenerative energy surges during rapid deceleration in EV traction inverters. IC Role / Device Role / Timing Role: Bidirectional surge clamp (with external Zener or TVS) that conducts only during overvoltage transients exceeding 1200 V threshold. Use Value: 15 A non-repetitive surge rating (10 ms, Tc = 25 °C) handles motor back-EMF spikes without degradation. | Use Scenario: Protects AC/DC front-end rectifiers and PFC stages against line transients in 11 kW bi-directional OBCs. IC Role / Device Role / Timing Role: High-voltage crowbar element placed across bulk capacitor bank to limit overvoltage during grid fault conditions. Use Value: 3 mm creepage distance satisfies reinforced insulation requirements for mains-connected automotive charging systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D02120E-TR | Same 1200 V/2 A rating; higher VF (1.55 V typ); 2.2 °C/W Rth(j-c); TO-220AC package | Requires mechanical mounting and insulator; less suitable for automated SMT assembly | Preferred where legacy through-hole footprint or higher surge margin (20 A IFSM) is required |
| SD12020C-13 | 1200 V/2 A; lower VF (1.25 V typ); 1.7 °C/W Rth(j-c); D2PAK package with larger thermal pad | Higher thermal mass; longer lead time; no AEC-Q101 documentation available | Consider when junction temperature must stay below 150 °C under sustained 2.5 A RMS load |
Compared with C3D02120E-TR and SD12020C-13, STPSC2H12B2Y-TR offers the best balance of AEC-Q101 compliance, SMT manufacturability, and creepage-certified layout simplicity-making it optimal for space-constrained, high-reliability automotive power modules.
Availability
STPSC2H12B2Y-TR is available at Aetrix Electronics and suitable for automotive traction inverters, on-board chargers, and industrial high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STPSC2H12B2Y-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's STPSC family of silicon carbide Schottky diodes-engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in next-generation EV and renewable energy systems.
FAQ
What is the maximum allowable case temperature for continuous 2 A DC operation?
The datasheet specifies IF(AV) = 2 A at Tc = 160 °C under DC conditions with maximum Rth(j-c) = 2.7 °C/W. Operation above this case temperature requires derating per Figure 3; at Tc = 175 °C, average current must be reduced to ≤1.3 A to maintain Tj ≤ 175 °C.
Does STPSC2H12B2Y-TR require a gate resistor or snubber network when used as a bootstrap diode?
No external snubber or gate resistor is needed. Its negligible reverse recovery and voltage-dependent capacitance (13 pF at 800 V) eliminate turn-off ringing and reduce dynamic losses-enabling direct integration into high-speed SiC gate driver circuits without added passive components.
How does the 3 mm creepage distance impact PCB layout compared to standard DPAK diodes?
The 3 mm anode-to-cathode creepage in the DPAK HV package allows compliant high-voltage isolation on standard FR4 boards without slots or cutouts. Standard DPAK diodes typically offer only ~1.5 mm creepage, requiring either increased board area or additional safety margins that compromise power density.
Is PPAP documentation available for STPSC2H12B2Y-TR in automotive programs?
Yes-ST provides full PPAP Level 3 documentation (including PSW, DFMEA, control plans, and dimensional reports) for STPSC2H12B2Y-TR upon request through authorized ST distributors. The part is AEC-Q101 qualified and manufactured in ST's ISO/TS 16949-certified facilities.
STPSC2H12B2Y-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 5A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 2 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 12 µA @ 1200 V
- Capacitance @ Vr, F:
- 190pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC2H12B2Y-TR FAQ
1.How can I place an order for STPSC2H12B2Y-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC2H12B2Y-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC2H12B2Y-TR reliable?
The price and inventory of STPSC2H12B2Y-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC2H12B2Y-TR is usually 5 days.
3.What payment methods are accepted for STPSC2H12B2Y-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC2H12B2Y-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC2H12B2Y-TR?
STPSC2H12B2Y-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC2H12B2Y-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC2H12B2Y-TR?
For technical support, including STPSC2H12B2Y-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC2H12B2Y-TR requirements.
6.How does Aetrix verify that STPSC2H12B2Y-TR is sourced from the original manufacturer or authorized distributors?
All STPSC2H12B2Y-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC2H12B2Y-TR meets industry standards.
7.What is the process for return or replacement of STPSC2H12B2Y-TR?
All STPSC2H12B2Y-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC2H12B2Y-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC2H12B2Y-TR part is unused and in its original packaging.
Return procedure for STPSC2H12B2Y-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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