Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STPSC30G12WL

Part No.:
STPSC30G12WL
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
-
Datasheet:
AetrixSTPSC30G12WL.pdf
Description:
1200 V, 20 A HIGH SURGE SILICON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:166

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STPSC30G12WL from STMicroelectronics is a 1200 V, 30 A silicon carbide Schottky power diode in DO-247 LL package, designed for high-efficiency hard-switching PFC and DC/DC stages. It delivers negligible reverse recovery, temperature-independent switching, 1.35 V typical forward voltage at 30 A, 296 mJ avalanche energy rating, and operation up to 175 °C junction temperature - enabling robust use in solar inverters and EV on-board chargers.

For engineers reviewing the STPSC30G12WL datasheet, STPSC30G12WL pinout, STPSC30G12WL application, or STPSC30G12WL equivalent, key selection criteria include its zero-recovery behavior, high surge current capability (250 A @ 10 ms), low thermal resistance (0.30 °C/W typ.), and ECOPACK2 compliance for industrial and automotive-grade power systems.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC JBS structures by eliminating minority-carrier storage and associated reverse recovery charge. Its wide band-gap material enables stable 1200 V blocking with low VF and minimal capacitive turn-off transients across -55 °C to +175 °C.

The device uses a planar Schottky barrier structure on semi-insulating SiC substrate, delivering <150 nC total capacitive charge at 800 V and 2272 pF junction capacitance at 0 V - critical for reducing EMI and snubber losses in high-frequency (>10 kHz) PFC and DC/DC converters.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1200 V - Enables direct use in 1000 V DC bus systems without derating, supporting single-stage boost PFC in solar and EV charging.
IF(AV)30 A @ Tc = 145 °C - Sustains continuous conduction in high-power AC/DC front-ends with minimal heatsink requirements.
VF (typ.)1.35 V @ IF = 30 A, Tj = 25 °C - Reduces conduction loss to ~40.5 W (vs. ~60 W for Si FRD), improving system efficiency by 0.5–1.2%.
EAS296 mJ @ IAS = 7.7 A, L = 10 mH - Provides validated avalanche ruggedness during transient overvoltage events in unclamped inductive switching.
Rth(j-c)0.30 °C/W (typ.) - Enables high power density layout with ≤30 K temperature rise at 100 W dissipation, simplifying thermal design.
IFSM250 A @ tp = 10 ms (sinusoidal), Tc = 25 °C - Supports reliable startup and fault-current handling in UPS and server PSUs without derating.
Cj2272 pF @ VR = 0 V - Low junction capacitance minimizes displacement current and dv/dt-induced false triggering in gate-drive circuits.

Pinout & Package

STPSC30G12WL is housed in a DO-247 LL (Long Lead) package with two terminals: anode and cathode. The package features epoxy meeting UL94 V0, 0.8 N·m recommended mounting torque, and optimized thermal path via case conduction. Dimensions are fully specified per ST DS14115 Rev 1, page 6–7.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry point under forward biasConnected to input side of boost inductor or bridge leg; must handle full load current and surge peaks up to 250 A.
CathodeCurrent exit point under forward biasConnected to switching node (e.g., MOSFET drain); requires low-inductance PCB routing to minimize voltage overshoot.

Key Features

FeatureDesign Value
Zero reverse recovery charge (Qrr ≈ 0)Eliminates reverse recovery losses and associated EMI, enabling >100 kHz operation without snubbers.
Temperature-stable switching behaviorCapacitive turn-off characteristics remain unchanged from -55 °C to +175 °C - no timing drift in thermal cycling.
Avalanche energy rated (296 mJ)Guarantees safe operation during inductive switching faults without parameter degradation or failure.
High surge current capability (250 A)Withstands cold-start surges and line transients in telecom/server PSUs and EV OBCs without derating.
ECOPACK2 complianceMeets RoHS, halogen-free, and lead-free assembly requirements for global industrial and automotive applications.

Applications

Solar Inverter Boost StageEV On-Board Charger (OBC)

Use Scenario: High-voltage DC link boost stage converting 400–800 V battery input to 900 V for downstream LLC converter.

IC Role / Device Role / Timing Role: Power rectifier in continuous conduction mode (CCM) boost topology, conducting during MOSFET off-time.

Use Value: Zero Qrr eliminates recovery loss and ringing, enabling 100 kHz+ switching with <0.3% efficiency penalty vs. Si FRD.

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW OBC with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: Output rectifier in isolated DC/DC stage, operating at 100–300 kHz with synchronous rectification control.

Use Value: 175 °C max Tj and 250 A IFSM ensure reliability during repeated charge/discharge thermal cycles and grid fault transients.

Telecom Server PSUIndustrial UPS Power Stage

Use Scenario: Front-end PFC in 3 kW redundant server power supply with active clamp flyback or totem-pole topology.

IC Role / Device Role / Timing Role: High-side switch-leg freewheeling diode in totem-pole PFC, subjected to rapid dv/dt and high di/dt.

Use Value: 2272 pF Cj and <150 nC Qcj limit displacement current to <1.2 A peak, preventing false gate triggering of GaN HEMTs.

Use Scenario: Output rectification in double-conversion online UPS with 400 V DC bus and 20 kVA capacity.

IC Role / Device Role / Timing Role: Main output diode in phase-shifted full-bridge secondary, handling 30 A average and 119 A peak RMS current.

Use Value: 0.30 °C/W Rth(j-c) allows 79 A IF(RMS) conduction with <25 K rise, enabling compact heatsink integration in space-constrained rack units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D30120D (Wolfspeed)Same 1200 V/30 A rating; VF = 1.5 V (typ.) at 30 A; Rth(j-c) = 0.35 °C/W; DO-247 package (standard lead length)Higher VF increases conduction loss by ~4.5 W at full load; slightly lower surge rating (220 A)Select when legacy DO-247 footprint compatibility is required and 0.15 V VF penalty is acceptable.
SS120030 (ROHM)1200 V/30 A; VF = 1.45 V (typ.); Rth(j-c) = 0.32 °C/W; TO-247-2L package with shorter leadsTO-247-2L has higher parasitic inductance than DO-247 LL; no avalanche rating publishedPrefer for cost-sensitive industrial PSUs where avalanche ruggedness is not mandated and layout allows longer loop paths.

Compared with C3D30120D and SS120030, STPSC30G12WL offers the lowest VF (1.35 V), best thermal resistance (0.30 °C/W), and certified avalanche energy (296 mJ), making it optimal for high-reliability, high-frequency, and thermally constrained applications like EV OBCs and solar inverters.

Availability

STPSC30G12WL is available at Aetrix Electronics and suitable for solar inverters, EV on-board chargers, and telecom server power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and automotive programs.

Supply support for STPSC30G12WL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STPSC series belongs to ST's high-voltage SiC power diode product line, engineered specifically for next-generation energy-efficient power conversion in renewable energy, electric mobility, and datacenter infrastructure.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STPSC30G12WL supports continuous operation with case temperature up to 145 °C, as defined by its IF(AV) = 30 A rating. At Tc = 145 °C and Tj = 175 °C, the device maintains full 30 A average forward current capability without derating, provided thermal interface resistance and heatsink design maintain junction temperature within limits.

Does this diode require a gate resistor or snubber circuit?

No - the STPSC30G12WL is a two-terminal Schottky diode with no gate terminal and exhibits negligible reverse recovery charge (Qrr ≈ 0). Snubber circuits are unnecessary in most hard-switching applications; only minimal RC damping may be needed for ultra-high dv/dt environments (>50 V/ns) to suppress parasitic oscillation from layout inductance.

How does its avalanche rating compare to standard silicon diodes?

Unlike standard silicon diodes - which lack guaranteed avalanche capability - the STPSC30G12WL is fully rated for single-pulse avalanche energy (EAS = 296 mJ) under defined test conditions (IAS = 7.7 A, L = 10 mH). This enables safe operation during unclamped inductive switching events without parameter shift or catastrophic failure, a key differentiator for reliability-critical PFC stages.

Can STPSC30G12WL replace STPSC20G12WL in existing designs?

Yes - both share identical DO-247 LL package, pinout, and voltage rating (1200 V), but STPSC30G12WL offers higher IF(AV) (30 A vs. 20 A) and improved IFSM (250 A vs. 180 A). Thermal design must verify that increased conduction current does not exceed heatsink capacity; otherwise, it serves as a direct performance upgrade with no layout change required.

STPSC30G12WL Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
-
Packaging:
Tube
Product Status:
Active
Technology:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-

STPSC30G12WL FAQ

1.How can I place an order for STPSC30G12WL through Aetrix?

Please submit a Request for Quotation (RFQ) for STPSC30G12WL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STPSC30G12WL reliable?

The price and inventory of STPSC30G12WL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC30G12WL is usually 5 days.

3.What payment methods are accepted for STPSC30G12WL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC30G12WL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STPSC30G12WL?

STPSC30G12WL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STPSC30G12WL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STPSC30G12WL?

For technical support, including STPSC30G12WL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC30G12WL requirements.

6.How does Aetrix verify that STPSC30G12WL is sourced from the original manufacturer or authorized distributors?

All STPSC30G12WL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC30G12WL meets industry standards.

7.What is the process for return or replacement of STPSC30G12WL?

All STPSC30G12WL units undergo pre-shipment inspection (PSI). If there is an issue with STPSC30G12WL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STPSC30G12WL part is unused and in its original packaging.

Return procedure for STPSC30G12WL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STPSC30G12WL Tags

  • STPSC30G12WL
  • STPSC30G12WL PDF
  • STPSC30G12WL Datasheet
  • STPSC30G12WL Specifications
  • STPSC30G12WL Images
  • STMicroelectronics
  • STMicroelectronics STPSC30G12WL
  • Buy STPSC30G12WL
  • STPSC30G12WL Price
  • STPSC30G12WL Distributor
  • STPSC30G12WL Supplier
  • STPSC30G12WL Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER