STMicroelectronics STPSC30H12CWL

Overview

STPSC30H12CWL from STMicroelectronics is a 1200 V, 30 A dual-die silicon carbide Schottky power rectifier in TO-247 long-lead package, delivering negligible reverse recovery, 1.35 V typical forward voltage at 15 A and 25 °C, and operation up to 175 °C junction temperature. It serves as a high-efficiency output rectifier or PFC boost diode in industrial SMPS, solar inverters, and EV charging systems.

For engineers reviewing the STPSC30H12CWL datasheet, STPSC30H12CWL pinout, STPSC30H12CWL application, or STPSC30H12CWL equivalent, key selection criteria include its zero-recovery switching behavior, temperature-independent dynamic performance, low thermal resistance (0.25 °C/W max per device), and robust 105 A non-repetitive surge rating at 25 °C.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in hard-switching topologies by eliminating reverse recovery charge (Qrr ≈ 0) and associated switching losses. Its wide band-gap material enables stable VF and leakage current across -40 °C to +175 °C, with capacitive turn-off behavior confirmed independent of temperature.

The dual-die configuration supports parallel conduction paths within a single TO-247 LL package, delivering 30 A average forward current (IF(AV)) at TC = 150 °C and 38 A RMS forward current. Thermal resistance is specified at 0.25 °C/W (max) junction-to-case per device, enabling high-power density designs without forced air cooling.

Key Specifications

Pinout & Package

Package: TO-247 Long Leads (TO-247 LL), epoxy UL94 V0 compliant, screw-mountable with recommended torque 0.9–1.2 N·m. Designed for conduction cooling via case contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.

Compared with C3D03060E and SS120120, STPSC30H12CWL uniquely combines dual-anode topology, 1200 V rating, and 1.35 V VF in TO-247 LL-enabling compact, efficient, and thermally optimized PFC and output rectification without series stacking or layout compromise.

Availability

STPSC30H12CWL is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, EV onboard chargers, and UPS systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STPSC30H12CWL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-reliability power conversion in 1200 V systems where zero-recovery switching and thermal resilience are critical.

FAQ

Is STPSC30H12CWL pin-compatible with standard TO-247-3L diodes?

No. STPSC30H12CWL uses a TO-247 Long Leads (LL) package with three terminals: cathode (K/tab), anode 1 (A1), and anode 2 (A2). Unlike standard TO-247-3L (A-K-A or K-A-K), its pinout supports dual independent anodes and requires specific PCB layout to avoid shorting A1/A2. Mechanical dimensions differ in lead length and spacing.

What is the maximum allowable case temperature for continuous 30 A operation?

The datasheet specifies IF(AV) = 30 A at TC = 150 °C. Operation at 30 A requires maintaining case temperature ≤150 °C, verified via thermal design using Rth(j-c) = 0.25 °C/W (max). At TC = 135 °C, rated current increases to 42 A; at TC = 25 °C, it reaches 76 A - all values are per device, not per die.

Does STPSC30H12CWL require a gate resistor or snubber circuit?

No. As a Schottky diode with no minority-carrier storage, it has no reverse recovery and negligible ringing. Snubbers are unnecessary in most hard-switching applications. However, layout optimization (short traces, low-inductance paths) remains essential to manage di/dt-induced voltage overshoot from package inductance.

How does the dual-die structure affect thermal performance compared to single-die alternatives?

The dual-die configuration shares a common cathode tab, resulting in a lower total Rth(j-c) of 0.25 °C/W (vs. ~0.5 °C/W for single-die equivalents), because heat spreads across the same thermal interface. This improves power density and allows higher total power dissipation within the same footprint and cooling solution.