STMicroelectronics STPSC4H065DI

Overview

STPSC4H065DI from STMicroelectronics is a 4 A, 650 V silicon carbide (SiC) Schottky power diode in an insulated TO-220AC package. It delivers zero reverse recovery charge, temperature-independent switching, and 2500 VRMS insulation-enabling high-efficiency PFC stages in industrial SMPS and LLC resonant converters operating up to 175 °C junction temperature.

For engineers reviewing the STPSC4H065DI datasheet, STPSC4H065DI pinout, STPSC4H065DI application, or STPSC4H065DI equivalent, key selection criteria include its 1.56 V forward voltage at 4 A/25 °C, 21 pF capacitance at 400 V, 38 A non-repetitive surge rating, 3.0 °C/W typical junction-to-case thermal resistance, and ECOPACK®2 compliance for sustainable design.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in hard-switching topologies by eliminating reverse recovery losses and associated EMI. Its wide bandgap enables stable 650 V blocking with minimal capacitive turn-off behavior across –40 to +175 °C.

The insulated TO-220AC package provides 2500 VRMS isolation and 7 pF typical package capacitance-critical for minimizing common-mode noise in isolated AC-DC front-ends and ensuring safe creepage/clearance in medical and industrial power supplies.

Key Specifications

Pinout & Package

TO-220AC Insulated package: 3-terminal through-hole housing with electrically isolated tab (2500 VRMS), UL 94 V0 epoxy, and 0.55 N·m recommended mounting torque. Tab is cathode-connected; leads are anode and cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E, STPSC4H065DI trades 0.5 °C/W higher thermal resistance for integrated 2500 VRMS isolation-reducing BOM count and assembly steps in safety-critical AC-DC designs. Unlike SS14HE3/52T, it operates reliably at full 650 V with zero recovery, making it irreplaceable in high-voltage PFC.

Availability

STPSC4H065DI is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, medical AC-DC adapters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STPSC4H065DI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STPSC family of silicon carbide Schottky diodes-engineered specifically for high-efficiency, high-reliability PFC and DC-DC conversion in demanding industrial and computing power applications.

FAQ

What is the maximum allowable case temperature for continuous operation?

The STPSC4H065DI supports continuous operation with case temperature up to 125 °C, delivering its rated 4 A average forward current under those conditions. At higher case temperatures, derating applies per the I_F(AV) vs. T_c curve in Figure 5 of DS9222. Exceeding 125 °C requires thermal modeling to ensure junction temperature stays within the 175 °C absolute maximum limit.

Does the insulated tab require thermal interface material?

Yes-the insulated tab must be mounted using thermally conductive, electrically isolating interface material (e.g., ceramic washer or silicone pad) to maintain both thermal performance and 2500 VRMS isolation. Direct metal-to-metal contact voids the isolation rating and risks shorting. Mounting torque must remain within 0.55–0.70 N·m to avoid cracking the epoxy body.

Can STPSC4H065DI replace silicon diodes in existing PFC designs without layout changes?

Yes-its TO-220AC Ins. footprint matches legacy silicon diodes, and its zero reverse recovery eliminates snubber circuits. However, gate-drive timing may need minor adjustment due to faster switching edges, and layout parasitics should be reviewed to prevent voltage overshoot beyond 650 V. No change to gate drivers or controllers is required.

How does its capacitive charge affect EMI in high-frequency PFC?

With Q_cj = 12.5 nC at 400 V, STPSC4H065DI exhibits predictable, linear capacitive turn-off-generating minimal high-frequency harmonics compared to Si FRDs. This reduces common-mode EMI, allowing smaller Y-capacitors and simpler EMI filters in 100–300 kHz PFC designs, as confirmed in ST application note AN4021.