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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

STMicroelectronics STPSC4H065DLF

Name: STPSC4H065DLF
Brand: STMicroelectronics
SKU: STPSC4H065DLF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STPSC4H065DLF

Manufacturer:: STMicroelectronics

Category:: Single Diodes

Package:: 8-PowerVDFN

Datasheet:: STPSC4H065DLF.pdf

Description:: DIODE SIL CARB 650V 4A POWERFLAT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STPSC4H065DLF from STMicroelectronics is a 4 A, 650 V silicon carbide Schottky diode in PowerFLAT 8x8 HV package, designed for high-frequency switching applications requiring zero reverse recovery, low forward voltage (1.38 V typ. @ 25 °C), and operation up to 175 °C junction temperature. It serves as a bootstrap diode or LLC clamp in telecom PFC stages and industrial inverters.

For engineers reviewing the STPSC4H065DLF datasheet, STPSC4H065DLF pinout, STPSC4H065DLF application, or STPSC4H065DLF equivalent, key selection criteria include its negligible temperature-dependent switching behavior, 2.6 °C/W junction-to-case thermal resistance, 14.3 nC capacitive charge at 400 V, and ECOPACK2-compliant low-profile packaging for space-constrained power designs.

Technical Context

This SiC Schottky diode eliminates reverse recovery charge and associated ringing due to its majority-carrier conduction mechanism. Its wide bandgap enables stable 650 V blocking with minimal leakage (<170 µA @ 150 °C, VR = VRRM).

Thermal performance is optimized via direct die attachment in the PowerFLAT 8x8 HV package, supporting 38 A non-repetitive surge current (10 ms, Tc = 25 °C) and continuous 4 A average forward current at 140 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - Enables use in 400 V AC input PFC and 800 V DC bus systems without derating.
I_F(AV)	4 A @ T_c = 140 °C - Sustains continuous conduction in compact heatsinked layouts.
V_F(typ.)	1.38 V @ I_F = 4 A, T_j = 25 °C - Reduces conduction loss to ~5.5 W in typical 4 A operation.
R_th(j-c)(max)	3.9 °C/W - Allows thermal design margin for transient surges up to 35 A at 125 °C case.
Q_cj	14.3 nC @ V_R = 400 V - Minimizes turn-off energy loss in >100 kHz LLC resonant converters.
C_j	245 pF @ V_R = 0 V - Supports fast switching with predictable snubber sizing.
T_j(max)	175 °C - Enables operation in sealed industrial enclosures without forced air cooling.

Pinout & Package

STPSC4H065DLF uses the PowerFLAT 8x8 HV surface-mount package (0.85 mm nominal height, UL94 V0 epoxy, lead-free). The device has two terminals: anode and cathode, mounted on a thermally enhanced exposed copper pad.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Current entry point under forward bias	Connected to switching node (e.g., half-bridge leg) in bootstrap or clamping configurations.
Cathode	Current exit point under forward bias	Connected to high-side gate driver supply rail or resonant tank return path.
Exposed Pad	Thermal and electrical ground reference	Must be soldered to ≥200 mm² copper pour for R_th(j-c) ≤ 3.9 °C/W performance.

Key Features

Feature	Design Value
No reverse recovery	Eliminates switching losses and EMI in hard-switched topologies like boost PFC.
Temperature-independent switching	Capacitive turn-off behavior remains stable from -40 °C to 175 °C, enabling consistent timing in wide-temp environments.
High surge capability	Withstands 38 A (10 ms, T_c = 25 °C) - supports inrush current handling in server PSU front-ends.
Low profile package	0.85 mm height enables integration into ultra-thin 1U telecom rectifiers and fanless industrial drives.
ECOPACK2 compliance	Meets RoHS, halogen-free, and material declaration requirements for global industrial certifications.

Applications

Telecom Switch-Mode PSU

Industrial Boost PFC

Use Scenario: High-density 48 V intermediate bus converter with active clamp forward topology.

IC Role / Device Role / Timing Role: Bootstrap diode supplying gate driver for high-side MOSFET, operating at 300–500 kHz.

Use Value: Zero reverse recovery prevents shoot-through risk during high dv/dt transitions and reduces gate drive losses by >15% vs. Si FRD.

Use Scenario: 3.3 kW three-phase industrial PFC stage with interleaved boost architecture.

IC Role / Device Role / Timing Role: Output freewheeling diode in each boost leg, conducting 4 A average current at 100 kHz.

Use Value: 1.38 V forward drop cuts conduction loss by 35% versus 600 V Si fast recovery diode, improving system efficiency from 96.2% to 96.8%.

LLC Resonant Clamping

Solar Inverter DC Link Clamp

Use Scenario: 5 kW server rack PSU using asymmetric LLC with synchronous rectification.

IC Role / Device Role / Timing Role: Clamp diode across resonant capacitor to limit voltage overshoot during light-load conditions.

Use Value: 14.3 nC Q_cj ensures minimal energy dissipation during clamping events, reducing thermal stress on primary-side FETs.

Use Scenario: 15 kW string inverter with 1000 V DC link and dual-stage conversion.

IC Role / Device Role / Timing Role: Snubber clamp diode protecting IGBTs during DC link voltage transients caused by grid faults.

Use Value: 650 V rating and 175 °C max junction temperature allow reliable operation in unventilated outdoor enclosures with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D04065E (Wolfspeed)	Same 4 A/650 V rating; 1.55 V V_F(max) vs. 1.55 V for ST part; 2.7 °C/W R_th(j-c) vs. 2.6 °C/W typ.	Identical footprint but requires different stencil aperture due to slightly taller mold compound.	Preferred where tighter V_F distribution control is needed for parallel operation.
SS14HE3/52T (Vishay)	Si-based Schottky; lower 40 V rating, higher 0.52 V V_F, no high-temp capability (T_j(max) = 125 °C).	Only suitable for low-voltage (<60 V) DC-DC, not viable for 650 V PFC or inverter clamping.	Not a functional substitute - included only for legacy cost comparison in non-SiC designs.

Compared with C3D04065E, STPSC4H065DLF offers marginally better thermal resistance and identical surge rating, while SS14HE3/52T lacks both voltage rating and temperature capability for target applications - making ST's device the sole viable option for 650 V, high-frequency, high-temperature SiC rectification.

Availability

STPSC4H065DLF is available at Aetrix Electronics and suitable for telecom switch-mode PSUs, industrial boost PFC stages, and solar inverter DC link clamp circuits requiring stable component supply across multi-year production cycles.

Supply support for STPSC4H065DLF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STPOWER SiC Diode product line, engineered specifically for high-efficiency, high-frequency power conversion systems where zero-recovery performance and thermal robustness are critical.

FAQ

What is the maximum allowable case temperature for continuous 4 A operation?

The datasheet specifies I_F(AV) = 4 A at T_c = 140 °C with R_th(j-c) ≤ 3.9 °C/W. Exceeding 140 °C case temperature risks exceeding the 175 °C maximum junction temperature, especially under high ambient or poor PCB thermal design. Derating is required above this point.

Can STPSC4H065DLF be used in parallel configurations?

Yes - its positive temperature coefficient of forward voltage enables inherent current sharing. However, layout symmetry (matched trace inductance/resistance) and thermal coupling (shared copper area) are essential. The 1.38 V typ. V_F and tight 1.55 V max. ensure <±5% current imbalance under matched conditions.

Is the PowerFLAT 8x8 HV package compatible with standard reflow profiles?

Yes - it is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260 °C. The UL94 V0 epoxy and copper leadframe withstand standard Pb-free thermal cycling. Recommended preheat ramp rate: ≤3 °C/s; time above 217 °C: 60–150 s.

Does this diode require a gate resistor or snubber network?

No gate resistor is needed - it is a passive diode. A snubber may still be used to damp parasitic LC ringing from layout inductance, but unlike Si FRDs, no RC snubber is required to suppress reverse recovery spikes, significantly simplifying circuit design and reducing component count.

STPSC4H065DLF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: ECOPACK®2

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 4A

Voltage - Forward (Vf) (Max) @ If:: 1.55 V @ 4 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 40 µA @ 650 V

Capacitance @ Vr, F:: 245pF @ 0V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

Operating Temperature - Junction:: -40°C ~ 175°C

STPSC4H065DLF FAQ

1.How can I place an order for STPSC4H065DLF through Aetrix?

Please submit a Request for Quotation (RFQ) for STPSC4H065DLF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STPSC4H065DLF reliable?

The price and inventory of STPSC4H065DLF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC4H065DLF is usually 5 days.

3.What payment methods are accepted for STPSC4H065DLF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC4H065DLF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STPSC4H065DLF?

STPSC4H065DLF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STPSC4H065DLF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STPSC4H065DLF?

For technical support, including STPSC4H065DLF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC4H065DLF requirements.

6.How does Aetrix verify that STPSC4H065DLF is sourced from the original manufacturer or authorized distributors?

All STPSC4H065DLF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC4H065DLF meets industry standards.

7.What is the process for return or replacement of STPSC4H065DLF?

All STPSC4H065DLF units undergo pre-shipment inspection (PSI). If there is an issue with STPSC4H065DLF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STPSC4H065DLF part is unused and in its original packaging.

Return procedure for STPSC4H065DLF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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