STMicroelectronics STPSC6H065DLF

Overview

STPSC6H065DLF from STMicroelectronics is a 6 A, 650 V silicon carbide Schottky power diode in PowerFLAT 8x8 HV package, delivering negligible reverse recovery, 1.38 V typical forward voltage at 6 A and 25 °C, and 175 °C maximum junction temperature. It serves as a high-frequency clamping or bootstrap diode in LLC resonant converters and PFC stages for telecom and renewable energy inverters.

For engineers reviewing the STPSC6H065DLF datasheet, STPSC6H065DLF pinout, STPSC6H065DLF application, or STPSC6H065DLF equivalent, key selection criteria include its temperature-independent switching behavior, low capacitive charge (19.9 nC at 400 V), high surge capability (58 A @ 10 ms), and ultra-low profile (0.85 mm typical height) for space-constrained industrial power modules.

Technical Context

This SiC Schottky diode eliminates minority-carrier storage, enabling zero reverse recovery charge and eliminating turn-off ringing-critical for EMI-sensitive LLC and high-frequency boost PFC designs. Its wide bandgap material sustains 650 V blocking with low leakage (≤250 µA at 150 °C, VR = VRRM).

Thermal performance is defined by a max junction-to-case thermal resistance of 3.1 °C/W, supporting continuous 6 A conduction at 135 °C case temperature. Capacitance drops from 350 pF at 0 V to 35 pF at 400 V, enabling fast voltage transitions without excessive displacement current.

Key Specifications

Pinout & Package

STPSC6H065DLF uses the PowerFLAT 8x8 HV surface-mount package (0.85 mm typical height, 8.0 × 8.0 mm footprint), qualified for high creepage and UL94 V0 epoxy compliance. The device has two terminals: anode and cathode, mounted on exposed copper pads for low-inductance, high-current routing and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E, STPSC6H065DLF offers superior board-level integration via PowerFLAT 8x8 HV and lower conduction loss at elevated temperatures; versus SS10P6, it delivers 10× higher voltage rating, true zero-recovery operation, and 25 °C higher junction limit-enabling next-generation high-density, high-efficiency power conversion.

Availability

STPSC6H065DLF is available at Aetrix Electronics and suitable for telecom switch-mode power supplies, solar microinverter boost stages, and industrial motor drive PFC circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STPSC6H065DLF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the STPOWER SiC Diode product line, engineered specifically for high-efficiency, high-frequency power conversion in 400–800 V systems where zero-recovery loss and thermal robustness are critical.

FAQ

What is the maximum allowable case temperature for continuous 6 A operation?

The datasheet specifies I_F(AV) = 6 A at T_c = 135 °C under DC conditions. Exceeding this temperature without derating reduces reliability and may violate absolute maximum ratings. Thermal design must ensure case temperature stays at or below 135 °C using appropriate copper area and airflow per the R_th(j-c) = 3.1 °C/W max specification.

Does STPSC6H065DLF require a gate resistor or snubber network?

No-this is a two-terminal diode with no gate terminal. Unlike MOSFETs or IGBTs, it does not require gate drive components. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode may be used in high-di/dt LLC clamping applications to damp residual LC ringing from stray inductance, though not required for basic operation.

Can STPSC6H065DLF replace a standard silicon fast recovery diode in an existing PFC design?

Yes-with layout review. Its zero reverse recovery eliminates tail current, reducing MOSFET switching loss and EMI. However, lower junction capacitance (35 pF vs. ~1000 pF for Si FRD) may alter resonant behavior; verify stability in critical conduction mode (CRM) control loops and adjust compensation if needed.

Is the PowerFLAT 8x8 HV package compatible with standard reflow profiles?

Yes-it is qualified for lead-free reflow per JEDEC J-STD-020. Peak temperature must not exceed 260 °C for ≤30 seconds. The exposed copper thermal pad requires full solder paste coverage and stencil aperture design matching the 7.2 × 7.2 mm pad area (D2/E2 dimensions) to ensure mechanical integrity and thermal performance.