STMicroelectronics STPSC6H065G-TR
- Part No.:
- STPSC6H065G-TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STPSC6H065G-TR.pdf
- Description:
- DIODE SIL CARBIDE 650V 6A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,420
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Product details
Overview
STPSC6H065G-TR from STMicroelectronics is a 6 A, 650 V silicon carbide (SiC) Schottky power diode in D²PAK surface-mount package, designed for high-efficiency PFC and LLC resonant converters. It delivers zero reverse recovery charge, temperature-independent switching, and 400 A surge capability (tp = 10 µs), enabling robust operation in hard-switching industrial SMPS.
For engineers reviewing the STPSC6H065G-TR datasheet, STPSC6H065G-TR pinout, STPSC6H065G-TR application, or STPSC6H065G-TR equivalent, key selection criteria include its 1.56 V forward voltage at 6 A/25 °C, 300 pF junction capacitance at 0 V, 18 nC capacitive charge at 400 V, 2.9 °C/W max junction-to-case thermal resistance (D²PAK), and ECOPACK®2 environmental compliance.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-voltage rectification stages. Its wide bandgap enables a 650 V blocking rating with near-zero Qrr and negligible turn-off ringing - critical for reducing EMI and conduction losses in >100 kHz PFC boost stages.
The device operates up to 175 °C junction temperature with stable VF and IR characteristics across temperature. Its low Cj (30 pF at 400 V) and minimal dV/dt-induced displacement current support clean gate drive integrity in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Enables use in universal-input (85–265 VAC) PFC stages with 20%+ voltage margin against transients. |
| IF(AV) | 6 A - Rated average forward current at Tc = 135 °C, defining continuous conduction capability in thermally managed layouts. |
| VF @ 6 A, 25 °C | 1.56 V (typ.) - Directly determines conduction loss: ~9.4 W per diode at full load (P ≈ 1.35×IF(AV) + 0.192×IF(RMS)²). |
| Cj @ 0 V | 300 pF - Low junction capacitance minimizes capacitive turn-off current and reduces switching loss in high-dV/dt environments. |
| Qcj @ 400 V | 18 nC - Total capacitive charge governing displacement current during voltage ramp; impacts snubber sizing and EMI filter design. |
| Rth(j-c) max | 2.4 °C/W - Thermal resistance from junction to case (D²PAK), used to calculate ΔTj = Ptot × Rth(j-c) under steady-state conditions. |
| Tj(max) | 175 °C - Maximum allowable junction temperature, enabling operation in sealed or high-ambient industrial enclosures without derating. |
Pinout & Package
D²PAK (TO-263) surface-mount package with isolated copper tab (pin 1 = cathode, pin 2 = anode, pin 3 = exposed thermal pad tied to cathode). Insulated construction eliminates need for mounting insulator; thermal pad must be soldered to PCB copper pour for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Cathode) | High-side output node | Connected to PFC output bus or LLC resonant tank high-side; carries full load current and withstands full VRRM. |
| Pin 2 (Anode) | Switch node return path | Routes forward current to ground or low-side switch; low-inductance layout essential to minimize voltage overshoot during di/dt transitions. |
| Pin 3 (Thermal Pad) | Cathode-connected thermal interface | Electrically tied to cathode; must be soldered to ≥200 mm² internal/external copper area for Rth(j-c) ≤ 2.4 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery charge (Qrr = 0) | Eliminates recovery-related switching losses and associated EMI in hard-switched topologies like boost PFC. |
| Temperature-independent switching behavior | VF and Cj variation <±10% from −40 °C to 175 °C ensures consistent timing and loss profiles across operating range. |
| 400 A non-repetitive surge current (tp = 10 µs) | Withstands lightning-induced surges and inrush events without degradation, improving system-level reliability in AC-input stages. |
| ECOPACK®2 compliance | Meets RoHS, halogen-free, and material declaration requirements for industrial and energy infrastructure applications. |
| Low package capacitance (7 pF typical) | Minimizes coupling between high-dV/dt switch nodes and control circuitry, reducing noise injection into gate drivers and controllers. |
Applications
| Industrial PFC Boost Stage | Server PSU LLC Rectification |
|---|---|
Use Scenario: 3.3 kW active front-end in 19-inch rack-mounted server PSU with universal AC input. IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved boost PFC, operating at 100–200 kHz with 650 V DC bus. Use Value: Zero Qrr reduces total system losses by 0.8% vs. Si FRD, while 175 °C rating allows smaller heatsink volume. |
Use Scenario: Secondary-side rectification in resonant LLC converter powering 12 V/200 A CPU VRM. IC Role / Device Role / Timing Role: Cathode-connected freewheeling diode in center-tapped synchronous rectifier stage, clamping leakage inductance spikes. Use Value: 30 pF Cj at 400 V limits displacement current to <12 mA during 100 V/ns transitions, preventing false triggering of protection circuits. |
| Solar Microinverter DC Link | EV Onboard Charger Boost Stage |
Use Scenario: DC-DC stage in 1.2 kW photovoltaic microinverter converting 40–60 V PV string to 400 V DC link. IC Role / Device Role / Timing Role: Output rectifier in two-phase interleaved boost, handling bidirectional current during MPPT perturbation. Use Value: 6 A IF(AV) and 400 A IFSM sustain 3× overload during cloud-edge transients without thermal runaway. |
Use Scenario: 6.6 kW single-phase onboard charger using dual-phase interleaved PFC with 650 V DC bus. IC Role / Device Role / Timing Role: Fast-recovery clamp diode in boost choke snubber network, absorbing leakage energy during MOSFET turn-off. Use Value: 18 nC Qcj enables precise snubber capacitor sizing (e.g., 220 pF) to limit peak voltage to <750 V under worst-case di/dt. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D06065E (Wolfspeed) | Same 6 A/650 V rating; 1.7 V VF (typ.) at 6 A/25 °C; D²PAK package; 250 pF Cj @ 0 V. | Higher VF increases conduction loss by ~0.9 W at full load; lower Cj improves high-dV/dt immunity. | Prefer when EMI sensitivity dominates over efficiency; verify thermal pad layout compatibility with Wolfspeed footprint. |
| SS16HE3/5AT (Vishay) | 6 A/650 V SiC Schottky; TO-277 package (SMD, 2-pin); 1.65 V VF; no thermal pad; Rth(j-c) = 4.5 °C/W (max). | Limited thermal performance restricts use to <3 A continuous in ambient >50 °C; unsuitable for high-power PFC. | Select only for space-constrained auxiliary supplies or low-duty-cycle applications where thermal mass suffices. |
Compared with C3D06065E and SS16HE3/5AT, STPSC6H065G-TR offers the lowest VF (1.56 V) and best thermal resistance (2.4 °C/W), making it optimal for high-efficiency, high-power-density PFC designs requiring sustained 6 A operation.
Availability
STPSC6H065G-TR is available at Aetrix Electronics and suitable for industrial power supplies, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.
Supply support for STPSC6H065G-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.
This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in industrial and renewable energy systems.
FAQ
What is the maximum recommended case temperature for continuous operation?
The STPSC6H065G-TR supports continuous operation with case temperature up to 135 °C when mounted on a PCB with adequate copper area (≥200 mm² thermal pad connection). At this temperature, its 6 A average forward current rating is maintained per datasheet Table 1, assuming Rth(j-c) ≤ 2.4 °C/W and no thermal runaway condition (dPtot/dTj < 1/Rth(j-a)).
Does this diode require a gate resistor or snubber network?
No - as a Schottky diode, STPSC6H065G-TR has no gate terminal and does not require gate resistors. However, a small RC snubber (e.g., 100 Ω + 220 pF) across anode-cathode is recommended in high-di/dt boost PFC applications to damp residual LC ringing from parasitic inductance and its 300 pF junction capacitance.
Can STPSC6H065G-TR replace a silicon fast recovery diode in an existing design?
Yes - it is a direct drop-in replacement for 6 A/600–650 V Si FRDs in D²PAK footprint, provided the PCB thermal pad is reconfigured to connect to cathode potential and layout accounts for lower VF (reduced conduction loss) and absence of reverse recovery (eliminated turn-off loss and EMI). No gate drive or control changes are needed.
What is the insulation rating of the D²PAK package?
The D²PAK package itself is not insulated; STPSC6H065G-TR uses standard conductive D²PAK (no isolation barrier). For insulated mounting, ST offers the TO-220AC Ins variant (STPSC6H065DI) rated at 2500 VRMS. The D²PAK version requires external insulation (e.g., silicone pad or ceramic washer) if mounting to a grounded heatsink.
STPSC6H065G-TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 1.75 V @ 6 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 60 µA @ 650 V
- Capacitance @ Vr, F:
- 300pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC6H065G-TR FAQ
1.How can I place an order for STPSC6H065G-TR through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC6H065G-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC6H065G-TR reliable?
The price and inventory of STPSC6H065G-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC6H065G-TR is usually 5 days.
3.What payment methods are accepted for STPSC6H065G-TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC6H065G-TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC6H065G-TR?
STPSC6H065G-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC6H065G-TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC6H065G-TR?
For technical support, including STPSC6H065G-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC6H065G-TR requirements.
6.How does Aetrix verify that STPSC6H065G-TR is sourced from the original manufacturer or authorized distributors?
All STPSC6H065G-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC6H065G-TR meets industry standards.
7.What is the process for return or replacement of STPSC6H065G-TR?
All STPSC6H065G-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC6H065G-TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC6H065G-TR part is unused and in its original packaging.
Return procedure for STPSC6H065G-TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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