STMicroelectronics STPSC6TH13TI

Overview

STPSC6TH13TI from STMicroelectronics is a dual 650 V silicon carbide Schottky diode in insulated TO-220AB package, designed for high-efficiency bridge-less PFC and hard-switching rectification. It delivers 6 A average forward current per diode, exhibits negligible reverse recovery, maintains stable switching behavior up to 175 °C junction temperature, and supports 2500 V_rms insulation voltage - enabling robust operation in industrial AC-DC front-ends.

For engineers reviewing the STPSC6TH13TI datasheet, STPSC6TH13TI pinout, STPSC6TH13TI application, or STPSC6TH13TI equivalent, key selection criteria include its 650 V V_RRM, 22 A I_F(RMS), 1.56 V typical V_F at 6 A/25 °C, 300 pF C_j at 0 V, and 4.8 °C/W max R_th(j-c) per diode - all critical for thermal design and EMI-sensitive high-frequency rectifier layouts.

Technical Context

This dual SiC Schottky diode integrates two independent 650 V/6 A rectifiers in a single insulated TO-220AB housing, sharing a common heatsink interface but electrically isolated terminals. Its wide-bandgap silicon carbide substrate enables zero reverse recovery charge (Q_rr ≈ 0) and temperature-invariant switching dynamics - eliminating snubber circuits and reducing turn-off losses in continuous conduction mode (CCM) PFC stages.

The device's 7 pF inter-terminal capacitance and 2500 V_rms isolation rating support safe operation in ungrounded, high-voltage bridge-less topologies. Thermal coupling between diodes is quantified by R_th(c) = 0.3 °C/W, allowing accurate junction temperature estimation when both diodes conduct simultaneously under asymmetric load conditions.

Key Specifications

Pinout & Package

STPSC6TH13TI uses an insulated TO-220AB package with three leads: two anodes (A1, A2) and one shared cathode (K). The metal tab is electrically isolated from all terminals and serves solely as a thermal interface. Mounting torque must be maintained between 0.4–0.6 N·m to ensure mechanical integrity and optimal thermal contact without cracking the epoxy insulation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D06060E and SS12065, STPSC6TH13TI uniquely combines 2500 V_rms insulation, dual-diode integration, and industry-leading 1.56 V V_F, making it optimal for space-constrained, safety-critical bridge-less PFC modules requiring minimal external components.

Availability

STPSC6TH13TI is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and server power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for STPSC6TH13TI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-reliability AC-DC conversion in demanding industrial and renewable energy applications.

FAQ

What is the maximum recommended mounting torque for STPSC6TH13TI?

The datasheet specifies a mounting torque range of 0.4 to 0.6 N·m for the insulated TO-220AB package. Exceeding 0.6 N·m risks cracking the epoxy insulation layer or deforming the leadframe, compromising both thermal performance and dielectric integrity. Use a calibrated torque screwdriver and verify torque after thermal cycling.

Can STPSC6TH13TI be used in parallel with another identical unit?

No - the device is a dual-diode monolithic unit with shared thermal path and no inherent current-sharing mechanism. Parallel connection of two STPSC6TH13TI units is not recommended due to mismatched V_F temperature coefficients and unequal thermal coupling, which may cause current imbalance exceeding 20% at full load.

Does STPSC6TH13TI require a gate resistor or snubber network?

No - as a Schottky diode with negligible Q_rr and low C_j, it does not generate reverse recovery spikes or require snubbers. However, a small RC snubber (e.g., 100 Ω + 100 pF) across each diode may be added to damp high-frequency ringing induced by PCB parasitics in >200 kHz designs.

What is the derating rule for I_F(AV) above 100 °C case temperature?

I_F(AV) must be linearly derated from 6 A at T_c = 100 °C to 0 A at T_c = 175 °C, per the datasheet's absolute ratings table. This corresponds to a derating slope of –80 mA/°C. Operation above 100 °C requires forced-air cooling or liquid heatsinking to maintain safe junction temperature.