STMicroelectronics STPSC8H065CT

Overview

STPSC8H065CT from STMicroelectronics is a 650 V, dual-die silicon carbide Schottky rectifier in TO-220AB package, rated for 4 A average forward current per diode (8 A total device), with negligible reverse recovery and temperature-independent switching. It delivers low conduction loss (VF = 1.56 V typ. @ 25 °C, 4 A) and high surge robustness (IFSM = 38 A, 10 ms sine), enabling use in high-frequency PFC stages of industrial AC-DC power supplies.

For engineers reviewing the STPSC8H065CT datasheet, STPSC8H065CT pinout, STPSC8H065CT application, or STPSC8H065CT equivalent, key selection criteria include its zero-recovery behavior, 175 °C max junction temperature, 2.7 °C/W max junction-to-case thermal resistance per diode, and suitability for bridgeless interleaved topologies demanding low EMI and high efficiency at elevated temperatures.

Technical Context

This dual SiC Schottky diode leverages wide-bandgap silicon carbide to achieve a 650 V blocking rating while retaining true majority-carrier conduction-eliminating minority-carrier storage and associated reverse recovery charge (Qrr ≈ 0). Its capacitive turn-off behavior is defined by Qcj = 12.5 nC @ 400 V and Cj = 21 pF @ 400 V.

Thermal performance is optimized for conduction-cooled mounting: Rth(j-c) is 2.7 °C/W max per diode, and coupling resistance between dies is only 0.1 °C/W. The device operates continuously from –40 °C to +175 °C junction temperature, with reverse leakage capped at 170 µA @ 150 °C and VRRM.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (electrically connected to cathode K), three terminals: two anodes (A1, A2) and one common cathode (K). Mounting via M3 screw with torque 0.4–0.6 N·m; epoxy meets UL94 V0.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D08065E and SS12065, STPSC8H065CT offers the lowest typical VF (1.56 V), tightest Rth(j-c) spec (2.7 °C/W max), and true dual-anode independence-making it optimal for thermally constrained, multi-phase, or high-efficiency PFC designs where conduction loss and thermal coupling matter.

Availability

STPSC8H065CT is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STPSC8H065CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The STPSCxH065C series targets high-efficiency, high-reliability power conversion systems-specifically engineered for SiC-based PFC, solar inverters, and EV charging where zero-recovery, high-temperature operation, and surge robustness are critical.

FAQ

Is STPSC8H065CT suitable for use in automotive onboard chargers?

Yes, STPSC8H065CT is qualified for industrial-grade operation up to 175 °C junction temperature and supports the thermal and surge demands of 6.6 kW OBC PFC stages. While not AEC-Q101 qualified, its 38 A IFSM and stable VF across temperature make it widely deployed in non-safety-critical OBC front-ends where ST's industrial reliability standards apply.

What is the electrical relationship between A1, A2, and K terminals?

A1 and A2 are electrically isolated anodes connected to separate SiC die; K is their common cathode node and is internally bonded to the metal tab. There is no internal connection between A1 and A2-each conducts independently to K, enabling true dual-channel operation with minimal thermal crosstalk (Rth(c) = 0.1 °C/W).

How does STPSC8H065CT's thermal resistance compare to single-die alternatives?

At 2.7 °C/W max per diode (junction-to-case), STPSC8H065CT achieves lower thermal resistance than typical single-die 8 A SiC diodes (e.g., SS12065 at 3.0 °C/W). This results from optimized die attach and dual-die parallel thermal paths-enabling higher power density and reduced heatsink requirements in space-constrained designs.

Can STPSC8H065CT replace silicon fast recovery diodes in existing PFC designs?

Yes-STPSC8H065CT is a direct drop-in replacement for 600 V Si FRDs (e.g., STTH8R06D) in TO-220AB footprint. It eliminates snubber networks, reduces EMI filtering, and improves efficiency by >2% at full load. Layout changes are minimal, but gate-drive timing may be simplified due to absence of reverse recovery delay.