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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

STMicroelectronics STPSC8H065DI

Name: STPSC8H065DI
Brand: STMicroelectronics
SKU: STPSC8H065DI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STPSC8H065DI

Manufacturer:: STMicroelectronics

Category:: Single Diodes

Package:: TO-220-2 Insulated, TO-220AC

Datasheet:: STPSC8H065DI.pdf

Description:: DIODE SIC 650V 8A TO220AC INS

Quantity:: RFQ Add To RFQ list

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Inventory:793

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Product details

Overview

STPSC8H065DI from STMicroelectronics is an 8 A, 650 V silicon carbide (SiC) Schottky power diode in an insulated TO-220AC package, designed for high-efficiency PFC and LLC resonant converters. It delivers zero reverse recovery charge, temperature-independent switching, 75 A non-repetitive surge capability at 25 °C, and 2500 VRMS insulation - enabling robust operation in hard-switching industrial SMPS.

For engineers reviewing the STPSC8H065DI datasheet, STPSC8H065DI pinout, STPSC8H065DI application, or STPSC8H065DI equivalent, this SiC diode is selected for its ultra-low Q_cj (23.5 nC), low C_j (414 pF @ 0 V), minimal thermal resistance (R_th(j-c) = 2.45 °C/W typ.), and ECOPACK®2 compliance in high-reliability power conversion designs.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-efficiency topologies by eliminating reverse recovery losses and associated EMI. Its wide bandgap enables stable 650 V blocking with low forward voltage drift over temperature (V_F = 1.98–2.50 V at 150 °C, I_F = 8 A).

The insulated TO-220AC package provides 2500 VRMS isolation between case and die, reducing system-level creepage/clearance requirements while maintaining low junction-to-case thermal resistance (2.45 °C/W typ.) and 7 pF typical package capacitance - critical for minimizing gate drive coupling in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - Enables use in 400 V DC bus PFC stages with 30%+ safety margin against transients.
I_F(AV)	8 A @ T_c = 95 °C - Sustains continuous conduction in compact heatsink-limited PFC boost diodes.
I_FSM	75 A (10 ms, T_c = 25 °C) - Withstands inrush and overload surges without degradation.
V_F	1.56 V typ. @ 25 °C, 8 A - Reduces conduction loss vs. Si FRD (ΔP ≈ 0.8–1.2 W per device at full load).
Q_cj	23.5 nC @ V_R = 400 V - Directly determines turn-off capacitive energy loss in hard-switched converters.
R_th(j-c)	2.45 °C/W typ. - Enables thermal design with <100 °C junction rise at 8 A continuous in standard TO-220 heatsinks.
C_j	414 pF @ 0 V - Low capacitance minimizes dv/dt-induced displacement current and EMI generation.

Pinout & Package

The STPSC8H065DI uses an insulated TO-220AC package with electrically isolated metal tab (2500 VRMS isolation). The case serves as the cathode terminal, and the leaded pin is the anode. Mounting requires torque control (0.55 N·m recommended) to ensure thermal contact without cracking the insulating layer.

Pin/Terminal	Circuit Role	Design Meaning
Anode (lead)	Current entry point during forward conduction	Connected to input/switch node in boost PFC; must handle full AC line rectified current ripple.
Cathode (isolated tab)	Current exit point; electrically isolated from heatsink	Enables direct mounting to grounded heatsink without external insulator; eliminates thermal pad resistance penalty.

Key Features

Feature	Design Value
No reverse recovery charge (Q_rr = 0)	Eliminates switching loss and ringing in hard-switched topologies like boost PFC and LLC primary-side rectification.
Temperature-independent switching behavior	Ensures consistent timing and loss profile across -40 to +175 °C ambient, simplifying thermal derating.
High forward surge capability (75 A, 10 ms)	Supports cold-start inrush and transient overload without bond-wire fusing or parameter shift.
Insulated TO-220AC package (2500 VRMS)	Reduces PCB isolation spacing requirements and eliminates need for mica washers or silicone pads.
ECOPACK®2 compliance	Meets RoHS, halogen-free, and material declaration standards for industrial and automotive supply chains.

Applications

Server Power Supply

PFC Front-End

Use Scenario: High-density 3 kW server PSU with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Output rectifier in secondary-side synchronous or quasi-resonant stage.

Use Value: Zero Q_rr reduces output rectification loss by >40% vs. Si FRD, improving efficiency from 94% to 95.2% at full load.

Use Scenario: 1.5 kW single-phase boost PFC stage operating at 70 kHz.

IC Role / Device Role / Timing Role: Boost diode conducting during MOSFET off-time in continuous conduction mode.

Use Value: Low C_j (414 pF) and Q_cj (23.5 nC) minimize capacitive turn-off loss and EMI, enabling clean 150 kHz switching.

Industrial Motor Drive

Renewable Energy Inverter

Use Scenario: 7.5 kW HVAC inverter with integrated PFC and inverter stage.

IC Role / Device Role / Timing Role: Freewheeling diode in IGBT half-bridge leg, clamping inductive kickback.

Use Value: 175 °C max junction temperature and 75 A surge rating sustain reliability under motor stall and regenerative braking events.

Use Scenario: 5 kW string solar inverter with two-stage conversion (boost + H-bridge).

IC Role / Device Role / Timing Role: Boost diode in MPPT stage handling variable PV input up to 1000 Vdc.

Use Value: 650 V V_RRM supports 1000 Vdc PV arrays with 2× safety margin; low V_F drift maintains efficiency across desert temperature swings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D08065E (Wolfspeed)	Same 8 A / 650 V rating; D²PAK package; R_th(j-c) = 1.7 °C/W; no insulation.	Requires external insulator for heatsink mounting; better thermal performance but higher assembly cost.	Select when thermal budget is tighter and isolation can be implemented externally.
SS10P6L (ON Semiconductor)	Si-based 10 A / 600 V FRD; Q_rr = 45 nC; V_F = 2.2 V @ 8 A; R_th(j-c) = 2.0 °C/W.	Higher switching loss and EMI; limited to ≤100 kHz operation due to recovery tail.	Select only for cost-sensitive, low-frequency (<50 kHz), non-isolated designs where efficiency gain is secondary.

Compared with C3D08065E, STPSC8H065DI trades 0.65 °C/W higher thermal resistance for built-in 2500 VRMS isolation - reducing BOM count and assembly steps. Against SS10P6L, it delivers 100% elimination of Q_rr-related loss and 30% lower conduction loss at 150 °C, justifying SiC premium in high-frequency PFC.

Availability

STPSC8H065DI is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and certified ECOPACK®2 compliance.

Supply support for STPSC8H065DI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STPSC family of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-reliability power conversion in 650 V-class PFC, DC-DC, and motor drive applications.

FAQ

Is STPSC8H065DI pin-compatible with standard TO-220AC diodes?

Yes - it uses the same 3-pin TO-220AC outline with anode on pin 1 and cathode on the isolated tab. Mechanical footprint and mounting hole position match JEDEC TO-220AC standards, allowing drop-in replacement in existing layouts where insulation is required.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies I_F(AV) = 8 A at T_c = 95 °C. Exceeding this temperature requires linear derating per Figure 5; sustained operation above 105 °C risks exceeding the 175 °C max junction limit under typical thermal interface conditions.

Does the insulated package affect thermal performance compared to non-insulated TO-220AC?

Yes - R_th(j-c) is 2.45 °C/W (typ.) vs. 1.3 °C/W for non-insulated TO-220AC variants. The insulation layer adds ~1.15 °C/W thermal resistance, but eliminates thermal pad resistance and improves long-term reliability under vibration or thermal cycling.

Can STPSC8H065DI be used in parallel configurations?

Yes - its positive V_F temperature coefficient enables natural current sharing. Parallel operation requires matched layout impedance, identical heatsinking, and individual gate drive routing if used in synchronous rectification schemes with external MOSFETs.

STPSC8H065DI Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-2 Insulated, TO-220AC

Packaging:: Tube

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 8A

Voltage - Forward (Vf) (Max) @ If:: 1.75 V @ 8 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 80 µA @ 650 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AC ins

Operating Temperature - Junction:: -40°C ~ 175°C

STPSC8H065DI FAQ

1.How can I place an order for STPSC8H065DI through Aetrix?

Please submit a Request for Quotation (RFQ) for STPSC8H065DI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STPSC8H065DI reliable?

The price and inventory of STPSC8H065DI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC8H065DI is usually 5 days.

3.What payment methods are accepted for STPSC8H065DI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC8H065DI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STPSC8H065DI?

STPSC8H065DI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STPSC8H065DI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STPSC8H065DI?

For technical support, including STPSC8H065DI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC8H065DI requirements.

6.How does Aetrix verify that STPSC8H065DI is sourced from the original manufacturer or authorized distributors?

All STPSC8H065DI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC8H065DI meets industry standards.

7.What is the process for return or replacement of STPSC8H065DI?

All STPSC8H065DI units undergo pre-shipment inspection (PSI). If there is an issue with STPSC8H065DI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STPSC8H065DI part is unused and in its original packaging.

Return procedure for STPSC8H065DI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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