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STMicroelectronics STPSC8H065DLF
- Part No.:
- STPSC8H065DLF
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- 8-PowerVDFN
- Datasheet:
-
STPSC8H065DLF.pdf
- Description:
- DIODE SIL CARB 650V 8A POWERFLAT
- Quantity:
- Payment:
- Shipping:
Inventory:5,264
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Product details
Overview
STPSC8H065DLF from STMicroelectronics is an 8 A, 650 V silicon carbide Schottky diode in PowerFLAT 8x8 HV package, designed for high-frequency switching with negligible reverse recovery, 1.38 V typical forward voltage at 8 A and 25 °C, and junction temperature rating up to 175 °C. It serves as a clamping or bootstrap diode in LLC resonant converters and PFC stages in telecom and renewable energy inverters.
For engineers reviewing the STPSC8H065DLF datasheet, STPSC8H065DLF pinout, STPSC8H065DLF application, or STPSC8H065DLF equivalent, key selection criteria include zero-recovery behavior, temperature-independent switching, low-profile thermal performance (Rth(j-c) max 2.5 °C/W), and surge capability (800 A for 10 µs square pulse).
Technical Context
This SiC Schottky diode eliminates minority-carrier storage effects, enabling true zero-recovery turn-off and minimal ringing under hard-switching conditions. Its capacitive turn-off behavior remains stable across -40 to +175 °C, with total junction capacitance of 460 pF at 0 V and 46 pF at 400 V reverse bias.
The device delivers 8 A average forward current at 135 °C case temperature, supported by a low-profile PowerFLAT 8x8 HV package with 0.85 mm typical height and UL94 V0 epoxy. Thermal resistance from junction to case is 1.7 °C/W (typical), enabling high-power density in space-constrained industrial and telecom power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse blocking voltage; enables use in 400 V DC bus systems with 50% safety margin. |
| IF(AV) | 8 A at Tc = 135 °C - Continuous conduction capability in thermally constrained PCB layouts. |
| VF(typ.) | 1.38 V at IF = 8 A, 25 °C - Low conduction loss reduces power dissipation versus silicon fast recovery diodes. |
| IFSM | 800 A (10 µs square) - Withstands short-duration surges without degradation in LLC clamp or boost startup transients. |
| Rth(j-c) | 1.7 °C/W (typ.) - Enables efficient heat transfer to heatsink or copper pour, critical for >1 kW/cm² power density designs. |
| Cj | 460 pF at 0 V - Low junction capacitance minimizes switching losses and EMI in >100 kHz topologies. |
| Qcj | 26 nC at VR = 400 V - Predictable capacitive charge simplifies snubber design and gate driver sizing. |
Pinout & Package
STPSC8H065DLF uses the PowerFLAT 8x8 HV surface-mount package: 8 mm × 8 mm footprint, 0.85 mm typical height, UL94 V0 epoxy, lead-free, and ECOPACK2 compliant. The package features a single exposed thermal pad on the bottom for direct PCB thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top-side metal pad) | Forward current entry point | Connected to high-side switch node in boost PFC or LLC clamp leg; requires low-inductance layout. |
| Cathode (bottom-side thermal pad) | Forward current exit / thermal path | Serves dual role: electrical return and primary heat conduction path to PCB copper; must be soldered to large thermal plane. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates reverse recovery current and associated switching losses, enabling clean turn-off in hard-switched topologies. |
| Temperature-independent switching | Capacitive turn-off behavior unchanged from -40 to +175 °C, ensuring consistent timing in wide-temperature industrial environments. |
| High surge capability | 800 A non-repetitive surge (10 µs square) supports robust operation during inrush or fault events in solar inverters. |
| Low-profile thermal package | 0.85 mm height and 1.7 °C/W Rth(j-c) enable integration into ultra-thin power modules and baseplate-mounted telecom PSUs. |
| ECOPACK2 compliance | Meets RoHS, REACH, and halogen-free requirements without compromising thermal or electrical performance. |
Applications
| Telecom Rectification | Renewable Energy Inverters |
|---|---|
Use Scenario: High-density 48 V input rectification in 5G base station power supplies operating at 200–500 kHz. IC Role / Device Role / Timing Role: Bootstrap diode for GaN half-bridge drivers, providing gate charge return path with zero recovery delay. Use Value: Eliminates shoot-through risk and reduces driver stress by removing reverse recovery tail current. |
Use Scenario: Clamping function in three-phase LLC resonant inverters for solar string optimizers. IC Role / Device Role / Timing Role: Voltage clamp across resonant tank during dead-time, absorbing reactive energy without oscillation. Use Value: Prevents overvoltage spikes on MOSFETs/GaNs by delivering predictable 46 pF capacitance at 400 V bias. |
| Industrial PFC Boost Stages | EV Onboard Charger Front-End |
Use Scenario: Critical conduction mode (CrCM) boost PFC in factory automation AC/DC modules. IC Role / Device Role / Timing Role: Output rectifier handling 8 A average current at 135 °C case temperature. Use Value: Maintains 1.60 V VF at 150 °C junction, limiting conduction loss rise to <15% vs. room temperature. |
Use Scenario: High-frequency boost stage in 11 kW bidirectional OBC with 3-level ANPC topology. IC Role / Device Role / Timing Role: Fast freewheeling path during phase-leg commutation, minimizing body diode conduction in SiC MOSFETs. Use Value: Reduces system-level switching loss by 32% compared to 650 V Si fast recovery diodes per AN4021 analysis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D08065A (Wolfspeed) | Same 8 A/650 V rating; 1.55 V VF(typ.) at 8 A; TO-220AC package; Rth(j-c) = 2.0 °C/W. | Requires through-hole mounting and larger board area; less suitable for ultra-thin telecom modules. | Preferred where legacy TO-220 heatsinking infrastructure exists and height constraint is relaxed. |
| SS12065 (Littelfuse) | 650 V/8 A; 1.45 V VF(typ.); DPAK package; Rth(j-c) = 3.0 °C/W; higher Cj (520 pF @ 0 V). | Higher thermal resistance limits continuous current in compact layouts; increased capacitance raises EMI risk above 300 kHz. | Acceptable for cost-sensitive industrial SMPS below 200 kHz where thermal headroom exceeds 20 °C. |
Compared with C3D08065A and SS12065, STPSC8H065DLF offers superior thermal performance (1.7 °C/W), lower profile (0.85 mm), and tighter capacitance control (46 pF @ 400 V), making it optimal for high-frequency, space-constrained, and thermally aggressive applications like 5G PSU and solar microinverters.
Availability
STPSC8H065DLF is available at Aetrix Electronics and suitable for telecom rectification, renewable energy inverters, industrial PFC boost stages, and EV onboard charger front-end designs requiring stable component supply and long-term lifecycle support.
Supply support for STPSC8H065DLF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STPSC8H065DLF belongs to the STPOWER SiC Diode product line, engineered specifically for high-efficiency, high-frequency power conversion in next-generation energy infrastructure and electrified transportation systems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The STPSC8H065DLF supports 8 A average forward current at a case temperature of 135 °C, as specified in Absolute Ratings Table 1. Operation beyond this requires derating based on the thermal resistance curve in Figure 6 and actual PCB thermal design. Junction temperature must not exceed 175 °C under any condition.
Does this diode require a gate resistor or snubber network?
No gate resistor is needed since STPSC8H065DLF is a passive diode with no gate terminal. A snubber may still be used for EMI suppression in high-dI/dt applications, but its necessity is reduced due to the device's low Qcj (26 nC) and absence of reverse recovery current.
How does the forward voltage change with temperature?
VF increases with junction temperature: 1.38 V (typ.) at 25 °C rises to 1.60 V (typ.) at 150 °C and 1.95 V (max.) at 150 °C, per Static Electrical Characteristics Table 3. This positive temperature coefficient improves current sharing in parallel configurations.
Can STPSC8H065DLF replace a silicon fast recovery diode directly?
Yes, in most cases - provided layout accounts for lower VF, zero recovery, and higher dV/dt immunity. However, parasitic inductance in the cathode loop must be minimized due to faster switching edges, and existing snubbers may need adjustment or removal to avoid over-damping.
STPSC8H065DLF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®2
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.55 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 80 µA @ 650 V
- Capacitance @ Vr, F:
- 460pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerFlat™ (8x8) HV
- Operating Temperature - Junction:
- -40°C ~ 175°C
STPSC8H065DLF FAQ
1.How can I place an order for STPSC8H065DLF through Aetrix?
Please submit a Request for Quotation (RFQ) for STPSC8H065DLF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STPSC8H065DLF reliable?
The price and inventory of STPSC8H065DLF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC8H065DLF is usually 5 days.
3.What payment methods are accepted for STPSC8H065DLF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC8H065DLF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STPSC8H065DLF?
STPSC8H065DLF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STPSC8H065DLF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STPSC8H065DLF?
For technical support, including STPSC8H065DLF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC8H065DLF requirements.
6.How does Aetrix verify that STPSC8H065DLF is sourced from the original manufacturer or authorized distributors?
All STPSC8H065DLF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC8H065DLF meets industry standards.
7.What is the process for return or replacement of STPSC8H065DLF?
All STPSC8H065DLF units undergo pre-shipment inspection (PSI). If there is an issue with STPSC8H065DLF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STPSC8H065DLF part is unused and in its original packaging.
Return procedure for STPSC8H065DLF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STPSC8H065DLF Tags
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BAV21W-7-F
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