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STMicroelectronics STPSC8H065G-TR

Part No.:
STPSC8H065G-TR
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTPSC8H065G-TR.pdf
Description:
DIODE SIL CARBIDE 650V 8A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,436

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Product details

Overview

STPSC8H065G-TR from STMicroelectronics is an 8 A, 650 V silicon carbide (SiC) Schottky power diode in D²PAK package, designed for high-frequency hard-switching PFC and DC-DC converters. It delivers zero reverse recovery charge, temperature-independent switching behavior, 75 A non-repetitive surge current (tp = 10 ms), and 23.5 nC total capacitive charge at 400 V - enabling efficient operation in LLC resonant and boost topologies.

For engineers reviewing the STPSC8H065G-TR datasheet, STPSC8H065G-TR pinout, STPSC8H065G-TR application in PFC stages, or STPSC8H065G-TR equivalent SiC diodes, this page provides verified thermal resistance (Rth(j-c) = 1.3 °C/W typ.), forward voltage (VF = 1.56 V @ 8 A, 25 °C), junction temperature limit (175 °C), insulated package options, and real-world surge robustness data.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-efficiency AC-DC front-ends. Its wide bandgap enables a 650 V blocking rating with near-zero Qrr and negligible turn-off ringing - eliminating snubbers and reducing EMI in 65–100 kHz PFC designs.

The D²PAK package provides low thermal resistance (1.3 °C/W typ. junction-to-case) and supports conduction-cooled mounting on heatsinks. Its 414 pF junction capacitance at 0 V and 38 pF at 400 V ensures predictable soft-switching behavior across operating voltage range.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 650 V - maximum repetitive reverse voltage; defines safe operation in 400 VAC input PFC bus with margin.
IF(AV) 8 A - average forward current at Tc = 140 °C; determines continuous conduction capability in boost inductor path.
VF @ 8 A, 25 °C 1.56 V (typ.) - forward drop directly impacts conduction loss; enables <1.3 W loss at 8 A using P = 1.35×IF(AV) + 0.144×IF²(RMS).
Qcj @ 400 V 23.5 nC - total capacitive charge; governs turn-off energy loss and EMI generation in hard-switched boost stages.
Rth(j-c) 1.3 °C/W (typ.) - thermal resistance from junction to case; enables 10.4 W dissipation before reaching 175 °C junction limit at 95 °C case.
IFSM (10 ms) 75 A - non-repetitive surge current at Tc = 25 °C; ensures survival during line transients and startup inrush.
Tj(max) 175 °C - maximum junction temperature; allows operation in high-ambient industrial environments without derating.

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Insulated variants use TO-220AC Ins; this part uses standard D²PAK with solderable tab.

Pin/Terminal Circuit Role Design Meaning
Anode (Pin 1) Forward current entry Connected to switch node in boost topology; requires low-inductance layout to minimize voltage overshoot.
Cathode (Tab / Pin 2) Forward current exit / heat sink interface Electrically and thermally connected to output rail and PCB copper pour; must be soldered to ≥100 mm² 2-oz copper for Rth(j-c) compliance.

Key Features

Feature Design Value
No reverse recovery charge (Qrr ≈ 0) Eliminates switching losses and associated EMI in hard-switched PFC, enabling >98% efficiency at 65 kHz.
Temperature-stable switching Capacitive turn-off behavior unchanged from −40 °C to +175 °C - no derating needed across industrial ambient range.
High surge robustness 75 A IFSM (10 ms) withstands repeated line surges and inrush events without degradation in server/industrial SMPS.
ECOPACK®2 compliance Meets RoHS, halogen-free, and lead-free reflow requirements - qualified for automotive-grade manufacturing processes.

Applications

Server Power Supply Industrial PFC Module

Use Scenario: 3 kW front-end rectification in 1U rack-mounted server PSUs with active clamp PFC.

IC Role / Device Role / Timing Role: Boost diode in continuous conduction mode (CCM) PFC stage operating at 65–100 kHz.

Use Value: Zero Qrr reduces MOSFET voltage spikes by >40 V and eliminates need for RC snubber, cutting BOM cost and board space.

Use Scenario: 5 kW industrial motor drive with three-phase Vienna rectifier and digital control.

IC Role / Device Role / Timing Role: High-side freewheeling diode in interleaved boost legs with 120 °C ambient.

Use Value: 175 °C Tj(max) and stable VF allow full 8 A rating at 120 °C case without derating - improves power density by 22% vs. Si diodes.

Telecom Rectifier Renewable Energy Inverter

Use Scenario: 48 V telecom rectifier with dual-phase interleaved PFC feeding isolated LLC DC-DC stage.

IC Role / Device Role / Timing Role: Output diode in boost stage, handling 10 ms surge during battery backup switchover.

Use Value: 75 A IFSM ensures reliable operation during grid dropout events without thermal runaway or bond-wire failure.

Use Scenario: 10 kW solar string inverter with two-stage conversion: boost MPPT + full-bridge inverter.

IC Role / Device Role / Timing Role: Boost diode in high-voltage DC link (800 V bus), switching at 50 kHz with variable duty cycle.

Use Value: 23.5 nC Qcj minimizes turn-off loss contribution to total switching loss - critical for >99% weighted efficiency targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
C3D08065E (Wolfspeed) Same 8 A / 650 V rating; Rth(j-c) = 1.5 °C/W (higher); VF = 1.65 V @ 8 A, 25 °C. Slightly higher conduction loss; identical surge rating (75 A) but lower thermal performance limits peak power density. Prefer when legacy layout uses same footprint and thermal design margin exists.
SS12065A (Littelfuse) 8 A / 650 V; VF = 1.70 V @ 8 A, 25 °C; Qcj = 25.2 nC @ 400 V; Rth(j-c) = 1.4 °C/W. Higher Qcj increases turn-off loss in high-frequency (>80 kHz) PFC; lower surge rating (65 A) reduces transient headroom. Select only if cost sensitivity outweighs efficiency and reliability requirements in non-critical applications.

Compared with C3D08065E and SS12065A, STPSC8H065G-TR offers the lowest VF and Qcj among 8 A/650 V D²PAK SiC diodes, delivering superior conduction efficiency and reduced EMI - critical for high-density, high-efficiency PFC designs where thermal headroom is constrained.

Availability

STPSC8H065G-TR is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, telecom rectifiers, and renewable energy inverters requiring stable component supply and long-term lifecycle support.

Supply support for STPSC8H065G-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STPSC family of silicon carbide Schottky diodes - engineered specifically for high-efficiency, high-reliability AC-DC conversion in demanding industrial and computing power systems.

FAQ

What is the maximum recommended case temperature for continuous operation?

The STPSC8H065G-TR is rated for IF(AV) = 8 A at Tc = 140 °C per datasheet Table 1. Operating above this temperature requires linear derating: at 150 °C case, max IF(AV) drops to ~6.8 A. Thermal design must ensure junction stays ≤175 °C under worst-case load and ambient conditions.

Does this diode require a gate resistor or driver circuit?

No - STPSC8H065G-TR is a passive uncontrolled Schottky diode with no gate terminal. It conducts when anode voltage exceeds cathode voltage by >VF and blocks when reverse biased. Unlike MOSFETs or IGBTs, it has no control signal, gate drive, or switching timing constraints.

Can it replace a standard silicon fast recovery diode in an existing PFC design?

Yes, with layout review: the D²PAK footprint matches many Si FRDs, but SiC's zero Qrr eliminates snubber networks and reduces MOSFET voltage stress. Verify thermal interface (copper area, solder paste volume) meets Rth(j-c) spec, and confirm layout inductance is minimized to avoid voltage overshoot during diode turn-on.

Is the D²PAK variant electrically insulated like the TO-220AC Ins version?

No - STPSC8H065G-TR in D²PAK has a conductive metal tab (cathode) that must be electrically isolated from heatsink via insulating pad or coating. The TO-220AC Ins variant provides 2500 VRMS isolation; D²PAK relies on external insulation for high-voltage safety compliance.

STPSC8H065G-TR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.75 V @ 8 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
80 µA @ 650 V
Capacitance @ Vr, F:
414pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Operating Temperature - Junction:
-40°C ~ 175°C

STPSC8H065G-TR FAQ

1.How can I place an order for STPSC8H065G-TR through Aetrix?

Please submit a Request for Quotation (RFQ) for STPSC8H065G-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STPSC8H065G-TR reliable?

The price and inventory of STPSC8H065G-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC8H065G-TR is usually 5 days.

3.What payment methods are accepted for STPSC8H065G-TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC8H065G-TR transactions.

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STPSC8H065G-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STPSC8H065G-TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STPSC8H065G-TR?

For technical support, including STPSC8H065G-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC8H065G-TR requirements.

6.How does Aetrix verify that STPSC8H065G-TR is sourced from the original manufacturer or authorized distributors?

All STPSC8H065G-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC8H065G-TR meets industry standards.

7.What is the process for return or replacement of STPSC8H065G-TR?

All STPSC8H065G-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC8H065G-TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STPSC8H065G-TR part is unused and in its original packaging.

Return procedure for STPSC8H065G-TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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