STMicroelectronics STPSC8TH13TI

Overview

STPSC8TH13TI from STMicroelectronics is a dual 650 V silicon carbide Schottky diode in insulated TO-220AB package, designed for high-efficiency bridge-less PFC and hard-switching rectification. It delivers 8 A average forward current per diode, 650 V repetitive peak reverse voltage, 22 A RMS forward current, 75 A non-repetitive surge current (10 ms), and operates up to 175 °C junction temperature - enabling robust operation in industrial SMPS and solar inverters.

For engineers reviewing the STPSC8TH13TI datasheet, STPSC8TH13TI pinout, STPSC8TH13TI application, or STPSC8TH13TI equivalent, this page provides verified thermal resistance (Rth(j-c) = 4.3 °C/W per diode), zero-recovery switching behavior, 7 pF insulation capacitance, 2500 V_rms isolation rating, and real-world conduction loss equations - all critical for thermal design and topology selection in high-frequency power conversion.

Technical Context

This dual SiC Schottky diode integrates two independent 650 V/8 A diodes in a single insulated TO-220AB housing, sharing a common cathode configuration confirmed by ST's device summary and mechanical drawings. Its wide-bandgap silicon carbide substrate enables true zero reverse recovery charge (Q_cj = 23.5 nC at 400 V) and temperature-stable forward voltage (V_F = 1.75 V max at 8 A, 25 °C).

The insulated package provides 2500 V_rms isolation between case and die, with 7 pF inter-terminal capacitance - minimizing EMI coupling in high-dV/dt environments. Thermal design relies on conduction cooling via the metal tab, supported by Rth(j-c) = 4.3 °C/W (max) per diode and total Rth(j-c) = 2.35 °C/W when both diodes operate simultaneously.

Key Specifications

Pinout & Package

STPSC8TH13TI uses an insulated TO-220AB package with three terminals: two anodes (A1, A2) and one common cathode (K). The metal tab is electrically isolated (2500 V_rms) and serves as the thermal interface. Mounting torque must be 0.4–0.6 N·m to ensure reliable thermal contact without die stress.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D08065A and FFSD0865B, STPSC8TH13TI uniquely combines dual-diode integration, 2500 V_rms insulation, and TO-220AB mechanical robustness - making it optimal for field-serviceable industrial power supplies requiring direct heatsink mounting and high isolation integrity.

Availability

STPSC8TH13TI is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar inverters, EV on-board chargers, and UPS systems requiring stable component supply, long-lifecycle support, and traceable sourcing of high-reliability SiC power devices.

Supply support for STPSC8TH13TI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STPSC8TH13TI belongs to ST's STPSC series of silicon carbide Schottky diodes, engineered specifically for high-efficiency, high-frequency power conversion in bridge-less PFC, solar, and EV charging applications where zero-recovery behavior and thermal resilience are critical.

FAQ

What is the maximum recommended mounting torque for STPSC8TH13TI?

The datasheet specifies a mounting torque range of 0.4 to 0.6 N·m for the insulated TO-220AB package. Applying torque within this range ensures optimal thermal contact between the metal tab and heatsink while preventing mechanical stress on the die or package seal. Exceeding 0.6 N·m risks cracking the epoxy or deforming the leadframe, compromising insulation integrity and thermal performance.

Does STPSC8TH13TI require a gate driver or external control signal?

No - STPSC8TH13TI is a passive uncontrolled rectifier with no gate terminal. It operates solely based on applied voltage polarity and forward bias conditions. Unlike MOSFETs or IGBTs, it requires no drive circuitry, timing signals, or PWM control. Its switching behavior is intrinsic to the SiC Schottky junction and is fully defined by V_F, Q_cj, and thermal parameters.

Can STPSC8TH13TI be used in parallel configurations?

Yes, but only with matched forward voltage characteristics and symmetrical PCB layout. The datasheet confirms positive V_F temperature coefficient (V_F increases with temperature), enabling natural current sharing. However, parallel operation requires identical thermal paths and forced-air or liquid cooling to maintain ΔT_j < 5 °C between devices - otherwise, current imbalance may exceed 20%.

What is the meaning of "insulated" in the STPSC8TH13TI package description?

"Insulated" means the metal tab (case) is electrically isolated from both anodes and the common cathode by reinforced epoxy molding, rated for 2500 V_rms isolation. This allows direct mounting to a grounded heatsink without shorting the cathode or anodes - eliminating the need for insulating pads or shoulder washers in high-voltage applications like 650 V PFC stages.