STMicroelectronics STPST8H100SF

Overview

STPST8H100SF from STMicroelectronics is an 8 A, 100 V Schottky trench rectifier in PSMC (TO-277A) package, optimized for high-frequency SMPS with low conduction and switching losses. It delivers typ. VF = 0.560 V at 8 A / 125 °C, Tj(max) = 175 °C, and Rth(j-c) = 1.4 °C/W, enabling compact auxiliary power supplies in telecom and smart metering.

For engineers reviewing the STPST8H100SF datasheet, STPST8H100SF pinout, STPST8H100SF application, or STPST8H100SF equivalent, key selection criteria include forward voltage trade-off at elevated temperature, avalanche ruggedness (IAS = 12 A), thermal resistance under conduction cooling, and ECOPACK2 compliance for RoHS/REACH-sensitive designs.

Technical Context

This device employs ST's proprietary trench Schottky technology to achieve superior VF/IR balance on minimal silicon area. Its flat PSMC package enables direct PCB mounting with low thermal impedance and supports high-density layout in space-constrained DC/DC converters.

Designed for unclamped inductive switching, it withstands single-pulse avalanche energy (EAS) up to 1.08 J (L = 300 µH, IAS = 12 A, VCLDUT ≈ 15 V). Reverse leakage remains ≤4.6 mA at 125 °C / 70 V, ensuring stable operation in hot ambient environments.

Key Specifications

Pinout & Package

STPST8H100SF uses a 3-terminal PSMC (TO-277A) surface-mount package with anode-cathode-anode configuration. The flat, low-profile outline (4.6 mm × 6.5 mm × 1.1 mm) features exposed metal tab for thermal conduction and dual anode terminals to reduce parasitic inductance in high-dI/dt paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-8EWH10FN-M3/45 and SB8100, STPST8H100SF provides the lowest VF at high temperature and best thermal performance in its class, making it optimal for thermally constrained, high-reliability auxiliary SMPS where avalanche survival is mandatory.

Availability

STPST8H100SF is available at Aetrix Electronics and suitable for DC/DC converters, LED lighting drivers, and auxiliary power supplies requiring stable component supply across industrial, telecom, and smart infrastructure programs.

Supply support for STPST8H100SF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STPST8H100SF belongs to ST's trench Schottky rectifier product line, engineered specifically for high-frequency, high-efficiency secondary-side rectification in compact SMPS where thermal density and reliability under transient stress are critical.

FAQ

What is the maximum allowable case temperature for continuous 8 A operation?

The datasheet specifies IF(AV) = 8 A at Tc = 155 °C with δ = 0.5 square wave. Operation at 8 A is permitted up to 155 °C case temperature when mounted on sufficient copper area per Figure 3. Exceeding this requires linear derating per the IF(AV) vs. Tc curve.

Is STPST8H100SF suitable for synchronous rectification replacement?

No - STPST8H100SF is a passive Schottky rectifier, not a synchronous rectifier controller or MOSFET driver. It replaces standard diodes in freewheeling or OR-ing roles but cannot substitute for active gate-driven MOSFETs in synchronous topologies.

Does the PSMC package require solder paste stencil adjustments versus standard SMC?

Yes - PSMC (TO-277A) has a smaller footprint (4.6 × 6.5 mm vs. SMC's 7.1 × 6.2 mm) and thinner profile (1.1 mm vs. 2.3 mm). Recommended stencil aperture is 0.15 mm thick with 1:1 area ratio; thermal pad must be fully exposed for conduction cooling.

How is avalanche energy calculated for STPST8H100SF?

EAS is calculated as ½ × L × IAS², where L = 300 µH and IAS = 12 A per test conditions in Figure 2. This yields EAS = 1.08 J. The device is rated for single-pulse events only; repeated avalanching degrades reliability and is not guaranteed.