STMicroelectronics STTH1002CFP

Overview

STTH1002CFP from STMicroelectronics is a dual-center-tap ultrafast recovery rectifier diode in insulated TO-220FPAB package, rated for 200 V repetitive peak reverse voltage, 8 A average forward current per diode at Tc = 140 °C, and 20 ns typical reverse recovery time - optimized for high-frequency switch-mode power supplies and DC–DC converters.

For engineers reviewing the STTH1002CFP datasheet, STTH1002CFP pinout, STTH1002CFP application, or STTH1002CFP equivalent, key selection criteria include its 2000 VRMS insulation rating, low 0.78 V typical forward voltage at 150 °C/5 A, dual-diode thermal coupling behavior, and suitability for free-wheeling and polarity protection in compact industrial power stages.

Technical Context

This dual-diode device integrates two independent ultrafast silicon junctions in a single insulated TO-220FPAB housing, enabling shared thermal management while maintaining electrical isolation between cathodes and anodes. Its design targets high-efficiency, low-loss operation in hard-switched topologies where fast trr and low Qrr minimize switching losses.

The device exhibits asymmetric thermal resistance: 6.5 °C/W junction-to-case per diode and 5.0 °C/W per device, with coupling resistance of 3.5 °C/W - critical for accurate loss modeling when both diodes conduct simultaneously in center-tap configurations.

Key Specifications

Pinout & Package

TO-220FPAB is an insulated variant of TO-220 with molded plastic barrier between metal tab and leads, enabling direct heatsink mounting without insulating washers. The package features three leads: Pin 1 (Anode 1), Pin 2 (Cathode common), Pin 3 (Anode 2), with center tab electrically isolated and thermally connected to internal die substrate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual ultrafast rectifier applications.

Compared with STTH1002CT and VS-10ETH02-M3, STTH1002CFP uniquely combines certified 2000 VRMS insulation, through-hole robustness, and ultrafast 20 ns recovery - making it the only choice for safety-critical, field-serviceable, high-density AC/DC front-ends requiring direct heatsink mounting.

Availability

STTH1002CFP is available at Aetrix Electronics and suitable for industrial power supplies, telecom DC–DC modules, and motor control inverters requiring stable component supply, long-lifecycle support, and certified insulation integrity.

Supply support for STTH1002CFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STTH1002CFP belongs to ST's high-voltage ultrafast diode product line, engineered specifically for efficiency-critical, high-frequency power conversion where low trr, low VF, and reliable insulation are mandatory.

FAQ

What is the maximum continuous forward current per diode at 75 °C case temperature?

At Tc = 75 °C, STTH1002CFP supports 16 A average forward current per device (i.e., 8 A per diode), as specified in Table 2. This rating assumes symmetrical conduction and proper heatsinking to maintain case temperature at or below 75 °C - verified via thermal simulation using Rth(j-c) = 6.5 °C/W per diode.

Can STTH1002CFP be used in parallel with another identical unit?

No - STTH1002CFP is not characterized or recommended for paralleling. Its dual-diode structure shares a common thermal path but lacks matched VF or trr tracking between units. Parallel operation would cause current imbalance and potential thermal runaway; discrete single-die diodes with matching binning should be used instead.

Does the TO-220FPAB package require torque-controlled mounting?

Yes - ST specifies a recommended torque of 0.55 N·m and maximum torque of 0.7 N·m for the mounting screw in TO-220FPAB packages. Exceeding 0.7 N·m risks cracking the epoxy insulation barrier or deforming the leadframe, compromising both thermal performance and 2000 VRMS isolation integrity.

How does junction-to-case thermal resistance change when both diodes conduct simultaneously?

When both diodes conduct, total device Rth(j-c) drops to 5.0 °C/W (vs. 6.5 °C/W per diode), due to thermal coupling - but power dissipation must be calculated using ΔTj = P₁ × Rth(j-c) + P₂ × Rth(c), where Rth(c) = 3.5 °C/W. This coupling effect is confirmed in Section 1.1 of the datasheet and requires derating for simultaneous full-load operation.