STMicroelectronics STTH1002CGY-TR

Overview

STTH1002CGY-TR from STMicroelectronics is an AEC-Q101-qualified dual center-tap ultrafast rectifier diode in D2PAK package, rated for 200 V repetitive peak reverse voltage, 8 A average forward current per diode at Tc = 135 °C, and 20 ns typical reverse recovery time. It delivers low conduction loss (VF = 0.78 V typ. at 150 °C, 5 A) and high junction temperature capability (Tj(max) = 175 °C), targeting automotive DC–DC converters and SMPS freewheeling paths.

For engineers reviewing the STTH1002CGY-TR datasheet, STTH1002CGY-TR pinout, STTH1002CGY-TR application, or STTH1002CGY-TR equivalent, key selection criteria include reverse recovery performance under dIF/dt up to 200 A/µs, thermal resistance (Rth(j–c) = 4.0 °C/W per diode), leakage current ≤40 µA at 125 °C, and dual-diode center-tap configuration for synchronous rectification topologies.

Technical Context

This dual-center-tap ultrafast diode integrates two independent epitaxial planar junctions in a single D2PAK thermally optimized package. Its design targets high-frequency switching (>100 kHz) in automotive power conversion where low trr (20–25 ns), low VF (0.78–1.05 V across temperature/load), and robust IRM (≤7.6 A) minimize switching losses and EMI generation.

The device operates with junction-to-case thermal resistance of 4.0 °C/W per diode and 2.5 °C/W per device, enabling high-power density layouts on FR4 PCBs with ≥10 cm² copper area. Its AEC-Q101 qualification confirms suitability for under-hood automotive environments with operating junction temperatures from –40 °C to +175 °C.

Key Specifications

Pinout & Package

STTH1002CGY-TR is housed in a surface-mount D2PAK (TO-263) package with exposed metal tab for thermal conduction. Pin assignment follows center-tap dual-diode topology: terminals A1 and A2 are anodes of Diode 1 and Diode 2 respectively; K is the common cathode node.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast dual-diode rectifier applications.

Compared with STTH1002CBY-TR, the STTH1002CGY-TR offers 60% higher thermal dissipation capacity and 60% higher average current rating; versus MUR1020CT, it provides AEC-Q101 assurance, 43% faster recovery, and 15% lower VF at elevated temperature-critical for automotive reliability and efficiency.

Availability

STTH1002CGY-TR is available at Aetrix Electronics and suitable for automotive DC–DC converters, on-board charger auxiliary supplies, and engine control unit power stages requiring stable component supply and long-term lifecycle support.

Supply support for STTH1002CGY-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STTH1002C-Y belongs to ST's automotive-qualified ultrafast diode product line, engineered specifically for high-efficiency, high-reliability power conversion in harsh under-hood environments.

FAQ

What is the maximum continuous forward current per diode at 150 °C case temperature?

At Tc = 150 °C, the STTH1002CGY-TR supports 5 A average forward current per diode (IF(AV)), as specified in Table 2 of the datasheet. This rating assumes δ = 0.5 duty cycle and accounts for thermal derating to maintain junction temperature ≤175 °C under steady-state conduction.

Can STTH1002CGY-TR replace STTH1002CBY-TR in existing designs?

Yes, but only if mechanical and thermal constraints allow the larger D2PAK footprint and higher current capability. The pinout is identical (A1/A2/K), but D2PAK requires more PCB area and delivers 60% higher thermal performance. Layout revision may be needed to accommodate the 15.0–15.85 mm length.

Is the common cathode (K) internally bonded to the D2PAK metal tab?

No-the metal tab is electrically isolated and serves only as a thermal path. The K terminal is brought out separately on the lead frame; no internal connection exists between K and the tab. PCB layout must treat the tab as a floating thermal pad unless explicitly grounded for EMI suppression.

What is the recommended minimum copper area under the D2PAK tab for 8 A operation at 135 °C case temperature?

Per Figure 10 in the datasheet, ≥16 cm² of 35 µm-thick copper on FR4 is required to achieve Rth(j–a) ≈ 25 °C/W, limiting junction temperature rise to ~100 °C above ambient at 8 A. For Tc = 135 °C, ≥18 cm² is recommended to ensure safe margin under worst-case airflow and ambient conditions.