STMicroelectronics STTH110A

Overview

STTH110A from STMicroelectronics is an ultrafast high-voltage planar silicon rectifier diode in SMA package, rated for 1000 V repetitive peak reverse voltage and 1 A average forward current, with typical forward voltage drop of 1.42 V at 150 °C and reverse recovery time of 75 ns - deployed in snubber circuits and auxiliary power supplies for industrial SMPS.

For engineers reviewing the STTH110A datasheet, STTH110A pinout, STTH110A application, or STTH110A equivalent, key selection criteria include ultrafast trr (≤75 ns), soft-switching EMI performance, thermal resistance (Rth(j-l) = 30 °C/W), and ECOPACK2 compliance for lead-free assembly in high-reliability power conversion designs.

Technical Context

This diode uses ST's planar ultrafast technology to achieve soft reverse recovery with low stored charge, minimizing voltage overshoot and EMI during turn-off in hard-switched topologies. Its 175 °C maximum junction temperature and low Rth(j-l) support high ambient operation in compact layouts.

The device exhibits a typical VF of 1.42 V at IF = 1 A and Tj = 150 °C, and its dynamic behavior is characterized by trr ≤ 75 ns (IF = 0.5 A, Irr = 0.25 A, IR = 1 A), enabling efficient operation in 100–500 kHz switching applications such as flyback clamp and PFC boost freewheeling.

Key Specifications

Pinout & Package

The STTH110A is housed in an SMA (DO-214AC) surface-mount package with cathode band marking. Lead length is not applicable; thermal path is via soldered leads to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast high-voltage rectifier applications.

Compared with MUR110 and VS-1EWH10, the STTH110A offers optimal balance of soft recovery, surface-mount flexibility, and thermal robustness - especially where SMA footprint and 175 °C operation are required in space-constrained SMPS.

Availability

STTH110A is available at Aetrix Electronics and suitable for industrial SMPS auxiliary supplies, flyback snubber networks, and PFC boost freewheeling requiring stable component supply and long-term lifecycle assurance.

Supply support for STTH110A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The STTH series targets high-efficiency power conversion, with STTH110A optimized for ultrafast, high-voltage rectification in compact, thermally demanding SMPS topologies.

FAQ

What is the maximum allowable junction temperature for STTH110A?

The absolute maximum operating junction temperature is +175 °C, validated per DS3067 Rev 4 Table 1. This rating applies under steady-state conditions with proper PCB copper area and airflow; derating is required above 125 °C ambient per thermal curves in Figure 3–4.

Does STTH110A have a specified forward recovery voltage (VFP)?

Yes - VFP is specified as 18 V maximum under test conditions of IF = 1 A, dIF/dt = 50 A/µs, and VFR = 1.1 × VF(max), per Table 4 of DS3067 Rev 4. This parameter is critical for evaluating voltage stress during fast turn-on in synchronous rectifier gate drive circuits.

Is STTH110A suitable for use in automotive applications?

STTH110A is not AEC-Q101 qualified and lacks automotive-specific qualification data. While its 175 °C Tj(max) and ECOPACK2 compliance meet some environmental requirements, it is intended for industrial and commercial power supplies per ST's product summary and application notes.

How does the SMA package affect thermal performance versus DO-41?

The SMA package delivers Rth(j-l) = 30 °C/W (vs. DO-41's 45 °C/W), enabling ~50% lower junction-to-lead temperature rise at 1 A. This is achieved via shorter internal bond wires and larger copper pad contact area, as detailed in Table 2 and Figure 6 of DS3067 Rev 4.