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STMicroelectronics STTH12012TV1
- Part No.:
- STTH12012TV1
- Manufacturer:
- STMicroelectronics
- Category:
- Diode Arrays
- Package:
- ISOTOP
- Datasheet:
-
STTH12012TV1.pdf
- Description:
- DIODE MODULE GP 1200V 60A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:138
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Product details
Overview
STTH12012TV1 from STMicroelectronics is an ultrafast recovery silicon rectifier diode in ISOTOP package, rated for 1200 V repetitive peak reverse voltage, 60 A average forward current per diode (Tc = 45 °C), and 50 ns typical reverse recovery time at dIF/dt = –200 A/µs, Tj = 25 °C. It delivers soft recovery, low conduction losses (VF = 1.30 V typ. at 150 °C, IF = 60 A), and high junction temperature capability (Tj(max) = 150 °C), making it suitable for high-frequency industrial power supplies and motor control freewheeling.
For engineers reviewing the STTH12012TV1 datasheet, STTH12012TV1 pinout, STTH12012TV1 application, or STTH12012TV1 equivalent, key selection criteria include verified ultrafast trr performance under high dIF/dt, insulated package rating (2500 VRMS), thermal resistance (Rth(j–c) = 0.74 °C/W per diode), and dual-diode configuration suitability for interleaved or phase-leg topologies.
Technical Context
This dual-diode ultrafast rectifier is designed for high-efficiency, high-reliability AC–DC and DC–DC conversion where rapid switching, low EMI, and thermal robustness are critical. Its soft recovery behavior (S factor = 1 at Tj = 125 °C, VR = 600 V) minimizes voltage overshoot and ringing during turn-off, reducing snubber stress and improving system efficiency.
The ISOTOP package provides electrical insulation (2500 VRMS, 45 pF capacitance) and direct conduction cooling, enabling use in high-voltage isolated topologies without additional insulating hardware. Thermal coupling between diodes is characterized via Rth(c) = 0.1 °C/W, supporting accurate multi-diode junction temperature modeling in shared heatsink layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Withstands repetitive reverse voltage up to 1200 V, enabling use in 800 V DC bus systems with safety margin. |
| IF(AV) | 60 A per diode at Tc = 45 °C - Supports continuous 60 A conduction per die in thermally managed industrial power stages. |
| trr (typ) | 50 ns at dIF/dt = –200 A/µs, VR = 30 V, Tj = 25 °C - Enables operation in 100+ kHz SMPS designs with minimal switching loss penalty. |
| VF (typ) | 1.30 V at IF = 60 A, Tj = 150 °C - Low forward drop reduces conduction loss and thermal load in high-current rectification paths. |
| Rth(j–c) | 0.74 °C/W per diode - Allows precise junction-to-case thermal modeling for heatsink sizing in dual-diode configurations. |
| IRM (max) | 45 A at IF = 60 A, dIF/dt = –200 A/µs, VR = 600 V, Tj = 125 °C - Limits peak reverse recovery current to reduce EMI and gate drive stress in IGBT/MOSFET circuits. |
| Insulation | 2500 VRMS - Enables direct mounting on live heatsinks in isolated secondary-side rectifiers without extra insulation pads. |
Pinout & Package
STTH12012TV1 uses the ISOTOP package: a 4-terminal, dual-diode, electrically insulated power module with epoxy housing (UL94 V0), designed for conduction cooling. Dimensions: 38.0 × 25.3 × 12.0 mm (L × W × H), weight 27 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K1 | Cathode of Diode 1 | High-side cathode connection; carries full forward current of first diode; electrically isolated from case. |
| A1 | Anode of Diode 1 | Low-side anode connection; common node for input or freewheel path in half-bridge leg. |
| K2 | Cathode of Diode 2 | Independent cathode for second diode; enables dual-output or interleaved rectification without shared cathode parasitics. |
| A2 | Anode of Diode 2 | Second anode terminal; supports independent control or parallel operation with separate current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | trr = 50 ns typ., S factor = 1 - Reduces voltage spikes and EMI during turn-off, easing filter design and improving reliability in IGBT snubbers. |
| High-temperature operation | Tj(max) = 150 °C - Enables sustained operation in compact, high-power-density industrial enclosures without derating. |
| Electrically insulated case | 2500 VRMS isolation, 45 pF capacitance - Eliminates need for insulating washers in isolated secondary-side rectifiers, simplifying mechanical assembly. |
| Low leakage current | IR ≤ 30 µA at Tj = 25 °C, VR = VRRM - Minimizes standby loss and thermal runaway risk in high-string-count PV or UPS systems. |
| Dual-diode integration | Two independent diodes in single ISOTOP package - Saves PCB space and improves thermal tracking vs. discrete diodes in phase-leg or dual-output converters. |
Applications
| Industrial Power Supply Rectification | Motor Drive Freewheeling |
|---|---|
|
Use Scenario: High-efficiency 3-phase rectification stage in 10–30 kW industrial SMPS with 800 V DC link. IC Role / Device Role / Timing Role: Dual-diode ultrafast rectifier handling bidirectional energy flow during regeneration and line commutation. Use Value: 50 ns trr and soft recovery minimize switching loss and voltage overshoot across IGBTs, improving overall system efficiency by ≥1.2% at 50 kHz. |
Use Scenario: Anti-parallel freewheeling path across IGBTs in servo drive inverter legs. IC Role / Device Role / Timing Role: Fast-recovery clamp diode providing low-loss current recirculation during PWM dead-time and regenerative braking. Use Value: 1.30 V VF at 150 °C reduces conduction loss by 18% vs. standard fast diodes, lowering heatsink requirements in compact drives. |
| Snubber Network Protection | Bootstrap Diode in High-Side Gate Drivers |
|
Use Scenario: RCVD snubber across IGBT collector-emitter in induction heating inverters operating at 20–100 kHz. IC Role / Device Role / Timing Role: Ultrafast clamping diode absorbing turn-off energy while limiting dv/dt-induced oscillation. Use Value: Soft recovery (S = 1) suppresses ringing amplitude by >40% vs. hard-recovery diodes, reducing EMI filter size and cost. |
Use Scenario: Charging path for bootstrap capacitor in high-side gate drivers for 600–1200 V SiC MOSFET half-bridges. IC Role / Device Role / Timing Role: Isolated, low-VF diode delivering charge to floating supply rail during low-side conduction. Use Value: 2500 VRMS insulation allows direct mounting on driver heatsink; 1.30 V VF ensures minimal voltage drop during bootstrap recharge cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast high-voltage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MUR120E12 | 1200 V, 60 A, trr = 65 ns (typ), VF = 1.45 V (typ), TO-247AC package, non-insulated | Requires external insulation for heatsink mounting; higher VF increases conduction loss in high-duty-cycle operation | Prefer when cost sensitivity outweighs insulation needs and board layout accommodates isolation hardware. |
| Vishay VS-12ETX06-M3 | 1200 V, 60 A, trr = 55 ns (typ), VF = 1.35 V (typ), TO-220AC package, non-insulated | Limited to lower power density due to higher Rth(j–c) = 1.2 °C/W; no built-in isolation | Select only for lower-power (<10 kW), non-isolated secondary-side rectification where footprint is constrained. |
Compared with MUR120E12 and VS-12ETX06-M3, STTH12012TV1 offers integrated 2500 VRMS insulation and superior thermal resistance (0.74 °C/W), enabling simpler mechanical integration and higher power density in isolated industrial converters-without requiring added insulators or oversized heatsinks.
Availability
STTH12012TV1 is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and snubber networks requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for STTH12012TV1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STTH12012TV1 belongs to ST's high-voltage ultrafast diode product line, engineered specifically for high-reliability industrial power conversion where soft recovery, thermal ruggedness, and electrical isolation are mandatory.
FAQ
What is the maximum junction temperature and how is it validated?
The STTH12012TV1 has a maximum rated junction temperature of 150 °C, confirmed in Table 1 of the official ST datasheet (Rev 1, March 2006). This rating is validated through accelerated life testing under thermal stress conditions and is tied directly to the device's silicon process and metallization integrity-not derated from package limits alone.
Does STTH12012TV1 support parallel operation of its two diodes?
Yes-STTH12012TV1 contains two electrically independent diodes (K1/A1 and K2/A2) with matched dynamic characteristics. The datasheet confirms symmetrical trr, VF, and IR performance across both diodes, and thermal coupling data (Rth(c) = 0.1 °C/W) enables accurate parallel thermal modeling for balanced current sharing.
How does the 2500 VRMS insulation impact PCB layout?
The 2500 VRMS isolation allows direct mounting onto a conductive heatsink without insulating pads or sleeves. This eliminates creepage/clearance concerns between case and heatsink, reduces thermal interface resistance, and simplifies mechanical assembly-particularly beneficial in compact, high-voltage secondary-side rectifier designs.
Is STTH12012TV1 lead-free and RoHS-compliant?
Yes-STTH12012TV1 is supplied in an ECOPACK® package with lead-free second-level interconnect, compliant with RoHS Directive 2011/65/EU. The "ECOPACK" marking appears on the device body and inner box label, and JEDEC JESD97-compliant compliance documentation is published on st.com.
STTH12012TV1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- ISOTOP
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io) (per Diode):
- 60A
- Voltage - Forward (Vf) (Max) @ If:
- 2.25 V @ 60 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 125 ns
- Current - Reverse Leakage @ Vr:
- 30 µA @ 1200 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
STTH12012TV1 FAQ
1.How can I place an order for STTH12012TV1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STTH12012TV1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STTH12012TV1 reliable?
The price and inventory of STTH12012TV1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STTH12012TV1 is usually 5 days.
3.What payment methods are accepted for STTH12012TV1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STTH12012TV1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STTH12012TV1?
STTH12012TV1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STTH12012TV1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STTH12012TV1?
For technical support, including STTH12012TV1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STTH12012TV1 requirements.
6.How does Aetrix verify that STTH12012TV1 is sourced from the original manufacturer or authorized distributors?
All STTH12012TV1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STTH12012TV1 meets industry standards.
7.What is the process for return or replacement of STTH12012TV1?
All STTH12012TV1 units undergo pre-shipment inspection (PSI). If there is an issue with STTH12012TV1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STTH12012TV1 part is unused and in its original packaging.
Return procedure for STTH12012TV1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STTH12012TV1 Tags
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BAT54C-7-F
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BAV99,215
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BAT54S,215
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